Control Integrated POwer System (CIPOS™) IKCM10B60GA Datasheet For Power Management Application 1 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Table of Contents CIPOS™ Control Integrated POwer System ........................................................................................................ 3 Features .............................................................................................................................................................. 3 Target Applications ........................................................................................................................................... 3 Description ......................................................................................................................................................... 3 System Configuration ....................................................................................................................................... 3 Pin Configuration .................................................................................................................................................... 4 Internal Electrical Schematic ................................................................................................................................. 4 Pin Assignment ....................................................................................................................................................... 5 Pin Description .................................................................................................................................................. 5 HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12) ................................................ 5 VFO (Fault-output and NTC, Pin 14) ................................................................................................................. 6 ITRIP (Over current detection function, Pin 15) ................................................................................................ 6 VDD, VSS (Low side control supply and reference, Pin 13, 16) ....................................................................... 6 VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) ............................................................................... 6 N (Low side common emitter, Pin 17) ............................................................................................................... 6 W, V, U (High side emitter and low side collector, Pin 18 - 20)......................................................................... 6 P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24) ......................................................... 6 R, S (Single phase diode bridge rectifier input pins, Pin 22, 23) ....................................................................... 6 Absolute Maximum Ratings................................................................................................................................... 7 Module Section .................................................................................................................................................. 7 Inverter Section.................................................................................................................................................. 7 Rectifier Diode Section ..................................................................................................................................... 7 Control Section .................................................................................................................................................. 8 Recommended Operation Conditions .................................................................................................................. 8 Static Parameters ................................................................................................................................................... 9 Dynamic Parameters ............................................................................................................................................ 10 Bootstrap Parameters .......................................................................................................................................... 10 Thermistor ............................................................................................................................................................. 11 Mechanical Characteristics and Ratings............................................................................................................ 11 Circuit of a Typical Application ........................................................................................................................... 12 Switching Times Definition .................................................................................................................................. 12 Electrical characteristic ....................................................................................................................................... 13 Package Outline .................................................................................................................................................... 14 Datasheet 2 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA CIPOS™ Control Integrated POwer System Dual In-Line Intelligent Power Module 3Φ-bridge 600V / 10A Features Description Fully isolated Dual In-Line molded module The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. TrenchStop® IGBTs Optimized diodes for single phase diode bridge rectifier Rugged SOI gate driver technology with stability against transient and negative voltage Allowable negative VS potential up to -11V for signal transmission at VBS=15V Integrated bootstrap functionality Over current shutdown Temperature monitor Under-voltage lockout at all channels Low side common emitter Cross-conduction prevention All of 6 switches turn off during protection Lead-free terminal plating; RoHS compliant It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for applications like a washing machine. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. TrenchStop® IGBTs and anti parallel diodes are combined with an optimized SOI gate driver for excellent electrical performance. System Configuration 3 half bridges with TrenchStop® IGBTs and anti parallel diodes Single phase diode bridge rectifier Target Applications 3Φ SOI gate driver Washing machines Thermistor Fans Pin-to-heatsink creepage distance typ. 1.6mm Low power motor drives Datasheet 3 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Pin Configuration Bottom View Figure 1: Pin configuration Internal Electrical Schematic Figure 2: Internal schematic Datasheet 4 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Pin Assignment Pin Number Pin Name Pin Description 1 VS(U) U-phase high side floating IC supply offset voltage 2 VB(U) U-phase high side floating IC supply voltage 3 VS(V) V-phase high side floating IC supply offset voltage 4 VB(V) V-phase high side floating IC supply voltage 5 VS(W) W-phase high side floating IC supply offset voltage 6 VB(W) W-phase high side floating IC supply voltage 7 HIN(U) U-phase high side gate driver input 8 HIN(V) V-phase high side gate driver input 9 HIN(W) W-phase high side gate driver input 10 LIN(U) U-phase low side gate driver input 11 LIN(V) V-phase low side gate driver input 12 LIN(W) W-phase low side gate driver input 13 VDD Low side control supply 14 VFO Fault output / Temperature monitor 15 ITRIP Over-current shutdown input 16 VSS Low side control negative supply 17 N Low side common emitter 18 W Motor W-phase output 19 V Motor V-phase output 20 U Motor U-phase output 21 P Positive bus input voltage 22 S Single phase diode bridge rectifier S input 23 R Single phase diode bridge rectifier R input 24 NR Negative bus voltage Pin Description HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12) These pins are positive logic and they are responsible for the control of the integrated IGBT. The Schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-down resistor of about 5k is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input Schmitttrigger and noise filter provide beneficial noise rejection to short input pulses. 5k Figure 3: Input pin structure The noise filter suppresses control pulses which are below the filter time tFILIN. The filter acts according to Figure 4. Datasheet Figure 4: Input filter timing diagram 5 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA It is recommended for proper work of CIPOS™ not to provide input pulse-width lower than 1us. The IC shuts down all the gate drivers’ outputs, when the VDD supply voltage is VDDUV- = 10.4V. This prevents the external switches from critically low gate voltage during on-state and therefore from excessive dissipation. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter voltage. A minimum deadtime insertion of typically 380ns is also provided by driver IC, in order to reduce crossconduction of the external power switches. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. VFO (Fault-output and NTC, Pin 14) The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. A pull-up resistor is externally required to bias the NTC. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1V and a falling threshold of VBSUV- = 10.4V. VS(U,V,W) provide a high robustness against negative voltage in respect of VSS of -50V transiently. This ensures very stable designs even under rough conditions. VDD RON ,FLT VFO from ITRIP -Latch >1 VSS N (Low side common emitter, Pin 17) The low side common emitter is available for current measurement. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. from uv -detection Thermistor power below power levels power CIPOS™ Figure 5: Internal circuit at pin VFO W, V, U (High side emitter and low side collector, Pin 18 - 20) These pins are motor U, V, W input pins The same pin provides direct access to the NTC, which is referenced to VSS. An external pull-up resistor connected to +5V ensures, that the resulting voltage can be directly connected to the microcontroller P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24) The high side IGBT are connected to the bus voltage. It is noted that the bus voltage does not exceed 450 V. The bus voltage is referenced to NR ground. ITRIP (Over current detection function, Pin 15) CIPOS™ provides an over current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ. 0.47V) is referenced to VSS ground. A input noise filter (typ: tITRIPMIN = 530ns) prevents the driver to detect false over-current events. R, S (Single phase diode bridge rectifier input pins, Pin 22, 23) Rectifier input pins for connecting to the grid line. Over current detection generates a shut down of all outputs of the gate driver after the shutdown propagation delay of typically 1000ns. The fault-clear time is set to typical 65us. VDD, VSS (Low side control supply and reference, Pin 13, 16) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1V is present. Datasheet 6 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Absolute Maximum Ratings (VDD = 15V and TC = 25°C, if not stated otherwise) Module Section Description Condition Storage temperature range Insulation test voltage RMS, f = 60Hz, t =1min Operating case temperature range Refer to Figure 6 Symbol Value Unit min max Tstg -40 125 °C VISOL 2000 - V TC -40 100 °C Inverter Section Value Description Condition Symbol min max Unit Max. blocking voltage IC = 250µA VCES 600 - V DC link supply voltage of P-N Applied between P-N VPN - 450 V DC link supply voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V Output current TC = 25°C, TJ < 150°C TC = 80°C, TJ < 150°C IC -10 -6 10 6 A Maximum peak output current less than 1ms IC -16 16 A Short circuit withstand time1 VDC ≤400V, TJ = 150°C tSC - 5 µs 22.1 W 150 °C Power dissipation per IGBT Ptot Operating junction temperature range TJ -40 Single IGBT thermal resistance Junction-case RthJC 6.78 K/W Single diode thermal resistance Junction-case RthJCD 7.7 K/W Rectifier Diode Section Description Condition Maximum repetitive reverse voltage VRRM 900 - V - 10 A - 130 110 A IFRM Peak surge forward current 50Hz, Non repetitive TC = 25°C TC = 125°C IFSM I2t - value tp = 10ms TC = 25°C TC = 125°C Junction-case Unit max TC = 100°C, TJ < 150°C Single Diode thermal resistance Value min RMS forward current Operating junction temperature range 1 Symbol I2t - 84 60 A2s TJ(RD) -40 150 °C RthJC(RD) - 6.2 K/W Allowed number of short circuits: <1000; time between short circuits: >1s. Datasheet 7 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Control Section Value Description Condition Symbol Unit min max Module supply voltage VDD -1 20 V High side floating supply voltage (VB vs. VS) VBS -1 20 V VIN VITRIP -1 -1 10 10 V fPWM - 20 kHz Input voltage LIN, HIN, ITRIP Switching frequency Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. Value Description Symbol Unit min typ max DC link supply voltage of P-N VPN 0 - 450 V High side floating supply voltage (VB vs. VS) VBS 13.5 - 18.5 V Low side supply voltage VDD 14.0 16 18.5 V Control supply variation ΔVBS, ΔVDD -1 -1 - 1 1 V/µs Logic input voltages LIN,HIN,ITRIP VIN VITRIP 0 0 - 5 5 V Between VSS - N (including surge) VSS -5 - 5 V Figure 6: TC measurement point2 2 Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and brings wrong or different information. Datasheet 8 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Static Parameters (VDD = 15V and TC = 25°C, if not stated otherwise) Value Description Condition Symbol typ max VCE(sat) - 1.8 2.3 2.6 - VF - 1.75 1.8 2.35 Iout = 6A Collector-Emitter saturation voltage TJ = 25°C 150°C Iout = -6A Emitter-Collector forward voltage TJ = 25°C 150°C Unit min V V Rectifier diode forward voltage Iin= -10A 25°C 150°C VFR - 1 0.95 1.4 - V Collector-Emitter leakage current VCE = 600V ICES - - 1 mA Logic "1" input voltage (LIN,HIN) VIH - 2.1 2.5 V Logic "0" input voltage (LIN,HIN) VIL 0.7 0.9 - V ITRIP positive going threshold VIT,TH+ 400 470 540 mV ITRIP input hysteresis VIT,HYS 40 70 - mV VDD and VBS supply under voltage positive going threshold VDDUV+ VBSUV+ 10.8 12.1 13.0 V VDD and VBS supply under voltage negative going threshold VDDUVVBSUV- 9.5 10.4 11.2 V VDD and VBS supply under voltage lockout hysteresis VDDUVH VBSUVH 1.0 1.7 - V Input clamp voltage (HIN, LIN, ITRIP) Iin=4mA VINCLAMP 9.0 10.1 12.5 V Quiescent VBx supply current (VBx only) HIN = 0V IQBS - 300 500 µA Quiescent VDD supply current (VDD only) LIN = 0V, HINX=5V IQDD - 370 900 µA Input bias current VIN = 5V IIN+ - 1 1.5 mA Input bias current VIN = 0V IIN- - 2 - µA ITRIP input bias current VITRIP = 5V IITRIP+ - 65 150 µA VFO input bias current VFO = 5V, VITRIP = 0V IFO - 60 - µA VFO output voltage IFO = 10mA, VITRIP = 1V VFO - 0.5 - V Datasheet 9 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Dynamic Parameters (VDD = 15V and TC = 25°C, if not stated otherwise) Description Condition Symbol Turn-on propagation delay time Turn-on rise time VLIN,HIN = 5V; Iout = 6A, VDC = 300V Turn-on switching time typ max ton - 600 - ns tr - 15 - ns tc(on) 80 ns trr 90 ns toff - 770 - ns tf - 90 - ns VLIN,HIN = 0V; Iout = 6A, VDC = 300V Turn-off fall time Turn-off switching time tc(off) Short circuit propagation delay time From VIT,TH+ to 10% ISC Input filter time ITRIP VITRIP = 1V Input filter time at LIN, HIN for turn on and off VLIN,HIN = 0V & 5V Fault clear time after ITRIP-fault VITRIP = 1V Deadtime between low side and high side Unit min Reverse recovery time Turn-off propagation delay time Value 125 tSCP - 1200 ns - ns tITRIPmin 530 ns tFILIN 290 ns tFLTCLR 40 DTPWM 0.5 Deadtime of gate drive circuit DTIC 65 200 µs µs 380 ns IGBT turn-on energy (includes reverse recovery of diode) VDC = 300V, IC = 6A, TJ = 25°C 150°C Eon - 95 135 - µJ IGBT turn-off energy VDC = 300V, IC = 6A, TJ = 25°C 150°C Eoff - 95 135 - µJ Diode recovery energy VDC = 300V, IC = 6A, TJ = 25°C 150°C Erec - 25 50 - µJ Bootstrap Parameters (TC = 25°C, if not stated otherwise) Description Condition Symbol Repetitive peak reverse voltage 1 VRRM Value min typ 600 max Unit V RBS1 35 40 50 65 IF=0.6A, di/dt=80A/µs trr_BS 50 ns IF=20mA, VS2 and VS3=0V VF_BS 2.6 V Bootstrap resistance of U-phase1 VS2 or VS3=300V, TJ=25°C VS2 and VS3=0V, TJ=25°C VS2 or VS3=300V, TJ=125°C VS2 and VS3=0V, TJ=125°C Reverse recovery time Forward voltage drop RBS2 and RBS3 have same values to RBS1. Datasheet 10 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Thermistor Description Condition Resistor TNTC = 25°C B-constant of NTC (Negative temperature coefficient) Symbol Value Unit min typ max RNTC - 85 - k B(25/100) - 4092 - K 3500 30 2500 2000 1500 Thermistor resistance [kΩ ] Thermistor resistance [kΩ ] 35 3000 1000 25 Min. Typ. Max. 20 15 10 5 0 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 Thermistor temperature [℃] 500 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Thermistor temperature [℃] Figure 7: Thermistor resistance – temperature curve and table (For more information, please refer to the application note ‘AN CIPOS-mini 1 Technical description’) Mechanical Characteristics and Ratings Description Value Condition min typ max Unit Mounting torque M3 screw and washer 0.59 0.69 0.78 Nm Flatness Refer to Figure 8 -50 - 100 µm - 6.15 - g Weight Figure 8: Flatness measurement position Datasheet 11 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Circuit of a Typical Application Figure 9: Application circuit Switching Times Definition Figure 10: Switching times definition Datasheet 12 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Electrical characteristic 16 16 16 V DD =15V 12 10 8 6 4 V DD =15V V DD =20V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 14 12 10 8 6 TJ=25℃ 4 TJ=150 ℃ 2 0 0.0 5.5 Typ. Collector – Emitter saturation voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.9 H igh side @ T J=25 ℃ 0.8 H igh side @ T J=150 ℃ 0.7 Low side @ T J=25 ℃ 0.6 Low side @ T J=150 ℃ 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 12 14 2 High side @ T J =150 ℃ Low side @ T J=25 ℃ Low side @ T J=150 ℃ 0 .2 0 0 .1 5 0 .1 0 0 .0 5 V D C =300V V D D =15V 0 2 4 6 8 10 12 14 Low side @ T J =150 ℃ 66 0 64 0 62 0 60 0 58 0 4 6 8 10 12 14 H igh side @ T J=25 ℃ 35 0 H igh side @ T J=150 ℃ Low side @ T J=25 ℃ 30 0 Low side @ T J=150 ℃ 25 0 20 0 15 0 10 0 0 16 0 2 Ic, C ollector current [A] Typ. Turn on propagation delay time 4 6 8 10 12 14 60 40 20 0 2 Low side @ T J =25 ℃ Low side @ T J =150 ℃ 15 0 12 5 8 10 12 14 16 V D C =300V V D D =15V High side @ T J=25 ℃ High side @ T J=150 ℃ Low side @ T J=25 ℃ Low side @ T J=150 ℃ 85 0 80 0 75 0 70 0 65 0 0 2 4 6 8 10 12 14 16 Ic, C ollector current [A] Typ. Turn off propagation delay time 10 27 0 H igh side @ T J =25 ℃ H igh side @ T J =150 ℃ 24 0 Low side @ T J =25 ℃ 21 0 Low side @ T J =150 ℃ 18 0 15 0 12 0 90 1 0 .1 D : d u ty ratio D = 5 0% D = 2 0% D = 1 0% D=5% D=2% S in g le p u ls e 0 .0 1 60 1 E -3 Z 10 0 6 90 0 60 0 , transient thermal resistance [K/W] H igh side @ T J=150 ℃ 4 thJC trr, Reverse recovery time [ns] H igh side @ T J=25 ℃ 17 5 Low side @ T J=150 ℃ 95 0 16 V D C =300V V D D =15V 30 0 25 0 20 0 Low side @ T J=25 ℃ 80 100 0 33 0 22 5 High side @ T J =150 ℃ 105 0 Typ. Turn on switching time V D C =300V V D D =15V 27 5 3.5 High side @ T J =25 ℃ 10 0 Ic, C ollector current [A] 30 0 3.0 110 0 V D C =300V V D D =15V 40 0 56 0 2 2.5 Typ. Reverse recovery energy loss 50 0 2.0 Ic, C ollector current [A] toff, Turn off propagation delay time [ns] 68 0 1.5 V D C =300V V D D =15V 12 0 0 16 Typ. Turn off switching energy loss tc(on), Turn on switching time [ns] High side @ T J =150 ℃ Low side @ T J =25 ℃ 1.0 Typ. Emitter – Collector forward voltage Ic, C ollector current [A] High side @ T J =25 ℃ 70 0 0.5 14 0 0 .2 5 0 .0 0 16 V D C =300V V D D =15V 72 0 TJ=150 ℃ 0 0.0 45 0 74 0 TJ=25℃ 4 Erec, Reverse recovery energy loss [uJ] Eoff, Turn off switching energy loss [mJ] 1.0 Typ. Turn on switching energy loss ton, Turn on propagation delay time [ns] 6 V F, Emitter - Collector voltage [V] High side @ T J =25 ℃ Ic, C ollector current [A] tc(off), Turn off switching time [ns] 8 0 .3 0 V D C =300V V D D =15V 1.1 75 50 10 5.5 Typ. Collector – Emitter saturation voltage 1.2 Eon, Turn on switching energy loss [mJ] 1.0 12 V CE(sat), Collector - Emitter voltage [V] V CE(sat), Collector - Emitter voltage [V] 0.0 0.5 14 IF, Emitter - Collector current [A] 14 Ic, Collector - Emitter current [A] Ic, Collector - Emitter current [A] TJ=25 ℃ 30 0 2 4 6 8 10 12 Ic, C ollector current [A] Typ. Turn off switching time Datasheet 14 16 0 0 2 4 6 8 10 12 Ic, C ollector current [A] Typ. Reverse recovery time 13 14 16 1 E -4 1 E -7 1 E -6 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 100 t P , P u ls e w id th [s e c .] IGBT transient thermal resistance at all six IGBTs operation Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Package Outline Datasheet 14 Ver. 1.0, 2014-03-01 CIPOS™ IKCM10B60GA Revision History Major changes since the last revision Page or Reference Datasheet Description of change 15 Ver. 1.0, 2014-03-01 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™ of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex. Last Trademarks Update 2014-07-17 www.Infineon.com Edition 2014-06-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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