BSI BH616UV1610 Ultra low power/high speed cmos sram 1m x 16 bit Datasheet

Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit
BH616UV1610
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
n DESCRIPTION
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.6V
Operation current : 12mA (Max.)at 55ns
2mA (Max.) at 1MHz
Standby current : 5.0uA (Typ.) at 3.0V/25OC
VCC = 1.2V
Data retention current : 2.5uA(Typ.) at 25OC
Ÿ High speed access time :
-55
55ns (Max.) at VCC=1.65~3.6V
-70
70ns (Max.) at VCC=1.65~3.6V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE1, CE2 and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refresh
Ÿ Data retention supply voltage as low as 1.0V
The BH616UV1610 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at
1.65V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1610 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1610 is made with two chips of 8Mbit SRAM by
stacked multi-chip-package.
The BH616UV1610 is available in 48-ball BGA package.
n POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
STANDBY
OPERATING
TEMPERATURE
Industrial
-40OC to +85OC
BH616UV1610AI
Operating
(ICCSB1, Max)
VCC=3.6V
VCC=1.8V
30uA
25uA
1MHz
fMax.
2mA
6mA
12mA
A
LB
2
OE
3
A0
1MHz
VCC=1.8V
10MHz
fMax.
1.5mA
5mA
8mA
BGA-48-0608
n BLOCK DIAGRAM
n PIN CONFIGURATIONS
1
PKG TYPE
(ICC, Max)
VCC=3.6V
10MHz
4
A1
5
A2
6
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
CE2
B
DQ8
UB
A3
A4
CE1
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
VSS
DQ11
A17
A7
DQ3
VCC
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 16384
16384
E
VCC
DQ12
VSS
A16
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
DQ15
A19
A12
A13
WE
DQ7
H
A18
A8
A9
A10
A11
DQ0
.
.
.
.
.
.
.
.
.
.
.
.
16
16
Data
Output
Buffer
NC
Write Driver
Sense Amp
16
1024
Column Decoder
DQ15
CE2, CE1
WE
OE
UB
LB
16
Data
Input
Buffer
Column I/O
10
Control
Address Input Buffer
A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV1610
1
Revision 1.2
May.
2006
BH616UV1610
n PIN DESCRIPTIONS
Name
Function
A0-A19 Address Input
These 20 address inputs select one of the 1,048,576 x 16 bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
VCC
16 bi-directional ports are used to read data from or write data into the RAM.
VSS
Ground
Power Supply
n TRUTH TABLE
MODE
Chip De-selected
(Power Down)
CE1
CE2
WE
OE
LB
UB
DQ0~DQ7 DQ8~DQ15 VCC CURRENT
H
X
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
L
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
X
X
X
H
H
High Z
High Z
ICCSB, ICCSB1
L
H
H
H
L
X
High Z
High Z
ICC
L
H
H
H
X
L
High Z
High Z
ICC
L
L
DOUT
DOUT
ICC
H
L
High Z
DOUT
ICC
L
H
DOUT
High Z
ICC
L
L
DIN
DIN
ICC
H
L
X
DIN
ICC
L
H
DIN
X
ICC
Output Disabled
Read
Write
L
L
H
H
H
L
L
X
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
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2006
BH616UV1610
(1)
n ABSOLUTE MAXIMUM RATINGS
RATING
UNITS
RANG
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
AMBIENT
TEMPERATURE
-0.5(2) to 4.6V
V
Industrial
-40OC to + 85OC
1.65V ~ 3.6V
-40 to +125
O
C
Storage Temperature
-60 to +150
O
C
SYMBOL
VTERM
TBIAS
TSTG
n OPERATING RANGE
PARAMETER
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
n CAPACITANCE
(1)
O
(TA = 25 C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
Input
Capacitance
Input/Output
Capacitance
CIN
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns
CIO
VIN = 0V
10
pF
VI/O = 0V
15
pF
1. This parameter is guaranteed and not 100% tested.
O
O
n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
TEST CONDITIONS
VCC=1.8V
MIN.
TYP.(1)
MAX.
UNITS
1.65
--
3.6
V
-0.3(2)
--
VIH
IIL
VCC=1.8V
1.4
VCC=3.6V
2.2
Input High Voltage
Input Leakage Current
VIN = 0V to VCC,
0.4
V
0.8
VCC=3.6V
--
VCC+0.3(3)
V
--
--
1
uA
--
--
1
uA
--
--
CE1 = VIH or CE2 = VIL
ILO
Output Leakage Current
VOL
Output Low Voltage
VOH
ICC
ICC1
ICCSB
ICCSB1
VI/O = 0V to V CC,
CE1 = VIH or CE2 = VIL or OE = VIH or
UB = LB = VIH
V CC = Max, IOL = 0.2mA
VCC=1.8V
V CC = Max, IOL = 2.0mA
VCC=3.6V
V CC = Min, IOH = -0.1mA
VCC=1.8V
VCC-0.2
V CC = Min, IOH = -1.0mA
VCC=3.6V
2.4
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
VCC=1.8V
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
VCC=1.8V
IDQ = 0mA, f = 1MHz
VCC=3.6V
CE1 = VIH, or CE2 = VIL,
VCC=1.8V
IDQ = 0mA
VCC=3.6V
CE1≧VCC-0.2V or CE2≦0.2V,
VCC=1.8V
VIN≧V CC-0.2V or VIN≦0.2V
VCC=3.6V
Output High Voltage
Standby Current – TTL
Standby Current – CMOS
IDQ = 0mA, f =
FMAX(4)
0.2
V
0.4
-VCC=3.6V
--
--
--
--
6
8
8
12
1.0
1.5
1.5
2.0
--
V
mA
0.5
mA
mA
1.0
--
5.0
25
5.0(5)
30
uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. VCC=3.0V
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2006
BH616UV1610
O
O
n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C)
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
CE1≧VCC-0.2V or CE2≦0.2V,
MIN.
TYP. (1)
MAX.
UNITS
1.0
--
--
V
--
2.5
15
uA
0
--
--
ns
tRC (2)
--
--
ns
VIN≧VCC-0.2V or VIN≦0.2V
CE1≧VCC-0.2V or CE2≦0.2V,
VCC=1.2V
VIN≧VCC-0.2V or VIN≦0.2V
See Retention Waveform
tR
Operation Recovery Time
1. Typical characteristics are at TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
VCC
VDR≧1.0V
VCC
tCDR
tR
CE1≧VCC - 0.2V
VIH
CE1
VCC
VIH
n LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
VDR≧1.0V
VCC
VCC
tCDR
VCC
tR
CE2≦0.2V
CE2
VIL
VIL
n AC TEST CONDITIONS
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
VCC / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
tCLZ1, tCLZ2, tBE, tOLZ, tCHZ1,
tCHZ2, tBDO, tOHZ, tWHZ, tOW
Output Load
WAVEFORM
0.5Vcc
CL = 5pF+1TTL
Others
Output
CL(1)
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
INPUTS
VCC
GND
90%
10%
→ ←
Rise Time:
1V/ns
90%
10%
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BH616UV1610
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Revision 1.2
May.
2006
BH616UV1610
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tRC
tAVQX
tAA
tE1LQV
tACS1
Chip Select Access Time
tE2LQV
tACS2
Chip Select Access Time
tBLQV
tBA
Data Byte Control Access Time
tGLQV
tOE
Output Enable to Output Valid
tE1LQX
tCLZ1
Chip Select to Output Low Z
tE2LQX
tCLZ2
Chip Select to Output Low Z
tBLQX
tBE
Data Byte Control to Output Low Z
tGLQX
tOLZ
Output Enable to Output Low Z
tE1HQZ
tCHZ1
Chip Select to Output High Z
tE2HQZ
tCHZ2
Chip Select to Output High Z
tBHQZ
tBDO
Data Byte Control to Output High Z
tGHQZ
tOHZ
tAVQX
tOH
CYCLE TIME : 55ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
Read Cycle Time
55
--
--
ns
Address Access Time
--
--
55
ns
(CE1)
--
--
55
ns
(CE2)
--
--
55
ns
(LB, UB)
--
--
55
ns
--
--
30
ns
(CE1)
10
--
--
ns
(CE2)
10
--
--
ns
(LB, UB)
10
--
--
ns
5
--
--
ns
(CE1)
--
--
25
ns
(CE2)
--
--
25
ns
(LB, UB)
--
--
25
ns
Output Enable to Output High Z
--
--
25
ns
Data Hold from Address Change
10
--
--
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
ADDRESS
tOH
tAA
tOH
DOUT
R0201-BH616UV1610
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Revision 1.2
May.
2006
BH616UV1610
READ CYCLE 2
(1,3,4)
CE1
tACS1
CE2
(6)
tACS2
tCLZ
tCHZ
(5,6)
(5, 6)
DOUT
READ CYCLE 3
(1, 4)
tRC
ADDRESS
tAA
OE
tOH
tOE
tOLZ
CE1
(5)
tACS1
tCLZ1
CE2
(5)
tOHZ
tCHZ
(5)
(1,5)
tACS2
tCLZ2
tCHZ2
(2,5)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BH616UV1610
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Revision 1.2
May.
2006
BH616UV1610
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tWC
tAVWL
CYCLE TIME : 55ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
Write Cycle Time
55
--
--
ns
tAS
Address Set up Time
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
45
--
--
ns
tELWH
tCW
Chip Select to End of Write
45
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
45
--
--
ns
tWLWH
tWP
Write Pulse Width
35
--
--
ns
tWHAX
tWR1
Write Recovery Time
(CE1, WE)
0
--
--
ns
tE2LAX
tWR2
Write Recovery Time
(CE2)
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
20
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
ns
(LB, UB)
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
ADDRESS
OE
CE1
(5)
CE2
(5)
tCW
(11)
tCW
(11)
tWR1
(3)
tWR2
tBW
(3)
LB, UB
tAW
WE
tWP
tAS
tOHZ
(2)
(4,10)
DOUT
tDH
tDW
DIN
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Revision 1.2
May.
2006
BH616UV1610
WRITE CYCLE 2
(1,6)
tWC
ADDRESS
(5)
CE1
CE2
tCW
(11)
tCW
(11)
(5)
tBW
(12)
LB, UB
tAW
tWP
WE
tAS
tWHZ
tWR
(3)
(2)
(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE
low. All signals must be active to initiate a write and any one signal can terminate a write by
going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data
input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11. tCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BH616UV1610
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Revision 1.2
May.
2006
BH616UV1610
n ORDERING INFORMATION
BH616UV1610
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
I: -40oC ~ +85oC
PACKAGE
A: BGA-48-0608
Note:
Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
n PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.4 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8)
R0201-BH616UV1610
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Revision 1.2
May.
2006
BH616UV1610
n Revision History
Revision No.
History
Draft Date
Remark
1.0
Initial Production Version
July 15,2005
Initial
1.1
To improve access speed
-from 70ns to 55ns
Dec. 23, 2005
1.2
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
R0201-BH616UV1610
10
Revision 1.2
May.
2006
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