ON NSS12201LT1G Npn transistor Datasheet

NSS12201LT1G
12 V, 4.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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12 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 35 mW
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
12
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
2.0
A
2
A
SOT−23 (TO−236)
CASE 318
STYLE 6
Rating
Collector Current − Continuous
Collector Current − Peak
ICM
4.0
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
3
1
MAXIMUM RATINGS (TA = 25°C)
MARKING DIAGRAM
Symbol
Max
Unit
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Rating
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 6
1
VF M G
G
1
VF = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS12201LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS12201L/D
NSS12201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
12
−
−
12
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
200
200
−
330
−
−
−
−
−
−
−
−
−
−
0.003
0.035
0.053
0.068
0.008
0.050
0.080
0.090
−
0.760
0.900
−
0.750
0.900
150
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 12 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.2 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
−
450
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
−
75
pF
Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
100
ns
Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
350
ns
Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
110
ns
SWITCHING CHARACTERISTICS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS12201LT1G
TYPICAL CHARACTERISTICS
0.25
IC/IB = 10
150°C
0.15
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.2
25°C
IC/IB = 100
0.15
0.1
−55°C
0.05
0
25°C
0.1
−55°C
0.05
0.001
0.01
0.1
1
0
10
0.001
0.01
IC, COLLECTOR CURRENT (A)
1.1
150°C (5.0 V)
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
425
375
25°C (5.0 V)
325
25°C (2.0 V)
275
225
−55°C (5.0 V)
175
−55°C (2.0 V)
125
0.001
0.01
0.1
1
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
VCE = 2.0 V
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.9
IC, COLLECTOR CURRENT (A)
1.0
0.9
10
IC/IB = 10
1.0
0.3
10
0.001
0.01
0.1
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C (2.0 V)
475
1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
575
525
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
150°C
0.2
1.0
IC = 500 mA
10 mA
0.8
100 mA
0.6
300 mA
0.4
0.2
0
0.01
IC, COLLECTOR CURRENT (A)
0.1
1
10
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
100
NSS12201LT1G
TYPICAL CHARACTERISTICS
Cobo, OUTPUT CAPACITANCE (pF)
90
Cibo(pF)
375
350
325
300
275
250
225
200
175
0
1
2
3
4
5
Cobo(pF)
80
70
60
50
40
6
0
1
2
3
4
5
6
7
8
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
IC, COLLECTOR CURRENT (A)
Cibo, INPUT CAPACITANCE (pF)
425
400
100 ms
10 ms
1s
1 ms
1
Thermal Limit
0.1
0.01
Single Pulse Test
at Tamb = 25°C
0.01
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
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4
100
9
10
NSS12201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS12201L/D