Preliminary BT152F-600 SemiWell Semiconductor Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC ) ○ 1. Cathode ◆ TO-220F General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings Symbol 1 23 ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 12.7 A VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave : TC = 62 °C IT(RMS) R.M.S On-State Current 180° Conduction Angle 20 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive 220 A I2t for Fusing t = 8.3ms 242 A2 s I2 t di/dt Critical rate of rise of on-state current 50 A/㎲ PGM Forward Peak Gate Power Dissipation 20 W 0.5 W PG(AV) Forward Average Gate Power Dissipation Over any 20ms period IFGM Forward Peak Gate Current 5 A VRGM Reverse Peak Gate Voltage 5 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C TJ TSTG A.C. 1 minute 1/5 Nov, 2003. Rev. 0 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. BT152F-600 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Items Ratings Conditions Unit Min. Typ. Max. ─ ─ ─ ─ 10 200 ㎂ ─ ─ 1.7 V TC = 25 °C ─ ─ 20 mA TC = 25 °C ─ ─ 1.5 V 0.2 ─ ─ V 200 ─ ─ V/㎲ ─ ─ 20 mA VAK = VDRM IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C TC = 25 °C TC = 125 °C ITM = 40 A tp=380㎲ VAK = 6 V(DC), RL=10 Ω VD = 6 V(DC), RL=10 Ω TC = 125 °C IT = 100mA, Gate Open IH Holding Current TC = 25 °C Rth(j-c) Thermal Impedance Junction to case ─ ─ 3.3 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 60 °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. 2/5 BT152F-600 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max Allowable Case Temperature [ C] 140 1 o 10 PGM(20W) PG(AV)(0.5W) 0 10 IGM(5A) Gate Voltage [V] VGM(5V) o 25 C VGD(0.2V) -1 10 -1 0 10 1 10 2 10 3 10 120 100 80 π o θ 60 360° 40 θ : Conduction Angl e 20 0 4 10 θ = 180 2π 10 2 4 6 8 10 12 14 16 Average On-State Current [A] Gate Current [mA] Fig 3. Typical Forward Voltage Fig 4. Thermal Response 3 1 10 On-State Current [A] o Transient Thermal Impedance [ C/W] 10 2 10 o 125 C 1 10 o 25 C 0 10 0 10 -1 10 -2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 4.5 -5 10 -4 -3 10 10 On-State Voltage [V] 1 10 10 o 0 50 100 o Junction Temperature[ C] 150 o IGT(t C) 1 IGT(25 C) o VGT(toC) 0 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 10 VGT(25 C) -1 10 Time (sec) Fi g 5. Typi cal G ate Tri gg er Vo ltag e vs. Ju ncti on Tem per atur e 0.1 -50 -2 10 1 0.1 -50 0 50 100 150 o Junction Temperature[ C] 3/5 BT152F-600 Fig 7. Typical Holding Current Fig 8. Power Dissipation 25 Max. Average Power Dissipation [W] IH(toC) IH(25oC) 10 1 0.1 -50 θ = 120 θ = 90 θ = 60 15 θ = 30 o o o o o 10 5 0 0 50 100 o Junction Temperature[ C] 4/5 θ = 180 20 150 0 2 4 6 8 10 Average On-State Current [A] 12 14 BT152F-600 TO-220F Package Dimension Dim. mm Typ. Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.25 0.45 0.6 2.62 1.55 0.63 1.0 φ φ 1 φ 2 0.099 0.049 0.018 0.024 0.103 0.061 0.025 0.039 3.7 3.2 1.5 0.146 0.126 0.059 A E F Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 I H B φ φ1 C φ2 L G M 1 2 D 1. Cathode 2. Anode 3. Gate 3 J N O K 5/5