MCH6342 Power MOSFET –30V, 73mΩ, –4.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 73mΩ@ −4.5V ID Max −30V 99mΩ@ −2.5V −4.5A 155mΩ@ −1.8V Typical Applications • DC/DC Converter ELECTRICAL CONNECTION P-Channel 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit −30 Gate to Source Voltage VGSS ID ±10 V −4.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −18 A Power Dissipation When mounted on ceramic substrate 2 (1500mm × 0.8mm) PD 1.5 W Junction Temperature Tj 150 °C Drain Current (DC) V Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 4 PACKING TYPE : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain MARKING YR LOT No. VDSS LOT No. Drain to Source Voltage TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (1500mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 Value 83.3 1 Unit See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : MCH6342/D MCH6342 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−30V, VGS=0V VGS=±8V, VDS=0V −30 VDS=−10V, ID=−1mA −0.4 VDS=−10V, ID=−2A 3.4 typ max Unit V −1 μA ±10 μA −1.3 V 5.8 S RDS(on)1 RDS(on)2 ID=−2A, VGS=−4.5V 56 73 mΩ ID=−1A, VGS=−2.5V 71 99 mΩ RDS(on)3 Ciss ID=−0.3A, VGS=−1.8V 95 155 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss 83 pF Turn-ON Delay Time td(on) 8.2 ns Rise Time tr 28 ns Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 650 See specified Test Circuit VDS=−15V, VGS=−4.5V, ID=−4.5A pF 100 ns 60 ns 8.6 nC 1.3 nC 2.4 nC VSD Forward Diode Voltage IS=−4.5A, VGS=0V −0.83 −1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --15V VIN ID= --2A RL=7.5Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω S MCH6342 www.onsemi.com 2 MCH6342 www.onsemi.com 3 MCH6342 www.onsemi.com 4 MCH6342 PACKAGE DIMENSIONS unit : mm SC-88FL / MCPH6 CASE 419AS ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YR SC-88FL / MCPH6 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH6342-TL-H MCH6342-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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