HP MGA-52543-TR2G Low noise amplifier Datasheet

Agilent MGA-52543
Low Noise Amplifier
Data Sheet
Features
• Lead-free Option Available
Description
Agilent Technologies’ MGA-52543
is an economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA),
which is designed for use in LNA
and driver stages. While a capable
RF/microwave amplifier for any
low noise and high linearity 0.4 to
6 GHz application, the LNA focus
is Cellular/PCS base stations.
To attain NFmin condition, some
simple external matching is required. The MGA-52543 features a
calculated NFmin of 1.61 dB and 15
dB associated gain at 1.9 GHz from
a cascode stage, feedback FET
amplifier. The input and output are
partially matched to be near 50 Ω.
The MGA-52543 is a GaAs MMIC,
fabricated using Agilent
Technologies’ cost-effective,
reliable PHEMT (Pseudomorphic
High Electron Mobility Transistor)
process. It is housed in the SOT-343
(SC70 4-lead) package. This
package offers miniature size
(1.2 mm by 2.0 mm), thermal
dissipation, and RF characteristics.
Surface Mount Package
SOT-343/4-lead SC70
3
1
INPUT
4
Simplified Schematic
Vd 5V
360 pF
2.2 nH
MGA-52543
• Associated gain : 15 dB at 1.9 GHz
• 1.9 GHz performance tuned for
VSWR < 2:1
Noise figure: 1.9 dB
Gain: 14 dB
P1dB: +17.5 dBm
Input IP3: +17.5 dBm
• Single supply 5.0 V operation
Applications
• Cellular/PCS base station radio
card LNA
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
Pin Connections and
Package Marking
GND
3.3 nH
• Minimum noise figure: 1.61 dB at
1.9 GHz
• High dynamic range amplifier for
base stations, WLL, WLAN, and
other applications
22 nH
18 pF
42
For base station radio card unit
LNA application where better than
2:1 VSWR is required, a series
inductor on the input and another
series inductor on the output can
be added externally. The resulting
Noise Figure is typically 1.9 dB
with 14 dB Gain at 1.9 GHz. With a
single 5.0V supply, the LNA
typically draws 53 mA. This
alignment results in an Input
Intercept Point of 17.5 dBm.
• Operating frequency: 0.4 GHz ~
6.0 GHz
ESD Machine Model (Class A)
GND
ESD Human Body Model (Class 1A)
2
OUTPUT
& Vd
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
MGA-52543 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Maximum
Vd
Maximum Input Voltage
V
±0.5
Vd
Supply Voltage
V
7.0
Pd
Power Dissipation [2,3]
mW
425
Pin
CW RF Input Power
dBm
+20
Tj
Junction Temperature
°C
160
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance:[2]
θjc = 150°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Tcase = 25°C
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Vd = 5V, unless noted
Symbol
Parameter and Test Condition
Frequency
Units
Min.
Typ.
Max.
σ [3]
I d test
Current drawn
N/A
mA
45
53
65
3.57
NF [1]
Noise Figure
1.9 GHz
0.9 GHz
dB
1.9
1.8
2.3
0.15
Gain [1]
Gain
1.9 GHz
0.9 GHz
dB
13
14.2
15
15.5
0.26
IIP3 [1]
Input Third Order Intercept Point
1.9 GHz
0.9 GHz
dBm
14
+17.5
+18
Fmin [2]
Minimum Noise Figure
1.9 GHz
0.9 GHz
dB
1.6
1.5
Ga[2]
Associated Gain at Fmin
1.9 GHz
0.9 GHz
dB
15.0
16.2
OIP3 [1]
Output Third Order Intercept Point
1.9 GHz
0.9 GHz
dBm
31.7
33.0
P1dB [1]
Output Power at 1 dB Gain Compression
1.9 GHz
0.9 GHz
dBm
+17.4
+18
RL in[1]
Input Return Loss
1.9 GHz
0.9 GHz
dB
11
15
RL out [1]
Output Return Loss
1.9 GHz
0.9 GHz
dB
20
22
ISOL [1]
Isolation |s12|2
1.9 GHz
0.9 GHz
dB
-25
-25
2.28
Notes:
1. Measurements obtained from a fixed narrow band tuning described in Figure 1. This circuit designed to optimize Noise Figure and IIP3 while
maintaining VSWR better than 2:1.
2. Minimum Noise Figure and Associated Gain at Fmin computed from S-parameter and Noise Parameter data measured in an automated NF system.
3. Standard deviation data are based on at least 400 part sample size and 11 wafer lots.
Vd
Input
Match
42
RF
Input
Output Match
and DC Bias
RF
Output
Figure 1. Block Diagram of Test Fixture.
See Figure 7 in the Applications section for an equivalent schematic of 1.9 GHz circuit; Figure 11 in the Applications section for 900 MHz circuit.
2
MGA-52543 Typical Performance
All data are measured at Tc = 25°C, Vd = 5V, and in the following test system unless stated otherwise.
ICM Fixture
RF
Input
Vd
Tuner
42
Bias
Tee
RF
Output
Tuner
Figure 2. Test Circuit for S, Noise, and Power Parameters over Frequency.
2.7
2.4
2.1
2.1
1.8
1.5
20
-40°C
+25°C
+85°C
1.8
14
11
1.5
4.5 V
5.0 V
5.5 V
1.2
0.9
0
1
2
3
4
5
6
7
5
0
1
FREQUENCY (GHz)
2
3
4
5
6
7
14
11
40
40
35
35
30
25
-40°C
+25°C
+85°C
2
3
4
5
6
FREQUENCY (GHz)
Figure 6. Associated Gain vs. Frequency
and Temperature [1].
7
3
4
5
6
7
30
25
4.5 V
5.0 V
5.5 V
-40°C
+25°C
+85°C
20
5
2
Figure 5. Associated Gain vs. Frequency
and Voltage [1].
OIP3 (dBm)
OIP3 (dBm)
17
1
1
FREQUENCY (GHz)
Figure 4. Minimum Noise Figure vs.
Frequency and Temperature [1].
20
0
0
FREQUENCY (GHz)
Figure 3. Minimum Noise Figure vs.
Frequency and Voltage [1].
8
4.5 V
5.0 V
5.5 V
8
1.2
0.9
Ga (dB)
17
Ga (dB)
2.4
Fmin (dB)
Fmin (dB)
2.7
20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 7. Output Third Order Intercept Point
vs. Frequency and Voltage [2].
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 8. Output Third Order Intercept Point
vs. Frequency and Temperature [2].
Notes:
1. Minimum Noise Figure and Associated Gain at Fmin computed from S-parameter and Noise Parameter data measured in an automated NF system.
2. Tuners on input and output were set for narrow band tuning designed to optimize NF and OIP3 while keeping VSWRs better than 2:1. See Figure 9
for corresponding return losses at each frequency band.
3
MGA-52543 Typical Performance, continued
All data are measured at Tc = 25°C, Vd = 5V, and in the following test system unless stated otherwise.
35
RLin
RLout
3.2
2.8
2.8
2.4
2.4
20
NF (dB)
25
NF (dB)
RETURN LOSS (dB)
30
3.2
2.0
4.5 V
5.0 V
5.5 V
1.6
10
5
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
Figure 10. Noise Figure vs. Frequency and
Voltage.
17
17
4.5 V
5.0 V
5.5 V
GAIN (dB)
22
GAIN (dB)
20
16
14
11
4.5 V
5.0 V
5.5 V
8
10
2
3
4
5
6
7
1
2
3
4
5
16
1
2
3
4
5
1
6
FREQUENCY (GHz)
Figure 15. Output Power at 1dB Compression
vs. Frequency and Temperature.
3
4
5
19
19
17
7
17
15
4.5 V
5.0 V
5.5 V
-40°C
+25°C
+85°C
13
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 16. Input Third Order Intercept Point
vs. Frequency and Voltage.
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 17. Input Third Order Intercept Point
vs. Frequency and Temperature.
Note:
All data reported from Figures 7 through 17 using test setup described in Figure 2. Tuners on input and output were set for narrow band tuning
designed to optimize NF and OIP3 while keeping VSWRs better than 2:1. See Figure 9 for corresponding return losses at each frequency band.
4
6
Figure 14. Gain vs. Frequency and
Temperature.
13
7
2
FREQUENCY (GHz)
21
15
0
-40°C
+25°C
+85°C
0
21
13
-40°C
+25°C
+85°C
7
11
7
IIP3 (dBm)
IIP3 (dBm)
19
10
6
Figure 13. Gain vs. Frequency and
Temperature.
22
6
14
FREQUENCY (GHz)
25
5
5
0
FREQUENCY (GHz)
Figure 12. Output Power at 1 dB Compression
vs. Frequency and Voltage.
4
8
5
1
3
Figure 11. Noise Figure vs. Frequency and
Temperature.
20
19
2
FREQUENCY (GHz)
25
0
1
FREQUENCY (GHz)
Figure 9. Return Losses at each Narrow
Band Tuning.
13
-40°C
+25°C
+85°C
1.2
0
FREQUENCY (GHz)
P1 dB (dBm)
1.6
1.2
0
P1dB (dBm)
2.0
15
MGA-52543 Typical Performance, continued
ICM Fixture
Vd
Bias
Tee
42
RF
Input
RF
Output
20
32
2.6
17
28
2.2
1.8
1.4
IP3, P1dB (dBm)
3.0
GAIN (dB)
NF (dB)
Figure 18. Test Circuit for Figures 19 through 24 (Input and Output presented to 50Ω).
14
11
8
1.0
1
2
3
4
5
6
7
OIP3
P1dB
IIP3
20
16
5
0
24
12
0
1
FREQUENCY (GHz)
2
3
4
5
6
7
0
Figure 19. Noise Figure vs. Frequency
(in 50Ω).
3
4
5
6
7
FREQUENCY (GHz)
Figure 20. Gain vs. Frequency.
-15
2
1
FREQUENCY (GHz)
Figure 21. Input IP3, Output IP3 and P1dB vs.
Frequency.
5
70
60
-23
CURRENT (mA)
4
VSWR
ISOLATION (dB)
-19
3
-27
50
40
30
20
2
Id (-40°C)
Id (+25°C)
Id (+85°C)
-31
10
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 22. Isolation vs. Frequency.
5
In
Out
1
-35
6
7
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 23. Input and Output VSWR vs.
Frequency.
0
7
0
1
2
3
4
Vs (V)
Figure 24. Current vs. Vd.
5
6
7
8
MGA-52543 Typical Scattering Parameters
TC = 25°C, Vd = 5.0V, Id = 53 mA, ZO = 50 Ω, (from S and Noise Parameters in ICM test fixture)
Freq
s11 (m)
s11 (a)
s21 (dB) s21 (m)
s21 (a)
s12 (dB)
s12 (m)
s12 (a)
s22 (m)
s22 (a)
K
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
0.64
0.62
0.61
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.61
0.60
0.59
0.58
0.57
0.56
0.55
0.55
0.55
0.56
0.57
0.58
0.58
-17.42
-18.44
-20.41
-23.21
-26.02
-29.01
-31.88
-35.42
-38.48
-41.81
-45.23
-48.69
-52.14
-55.73
-59.22
-62.73
-66.34
-69.85
-73.41
-76.93
-80.55
-84.18
-87.95
-91.46
-109.93
-128.36
-146.55
-164.07
179.17
163.86
148.85
134.84
121.13
108.36
95.90
14.92
14.76
14.67
14.60
14.54
14.46
14.37
14.28
14.19
14.10
14.01
13.92
13.82
13.73
13.63
13.54
13.45
13.36
13.27
13.19
13.10
13.02
12.95
12.87
12.46
12.02
11.56
11.10
10.60
10.09
9.58
9.01
8.44
7.85
7.25
168.30
166.18
163.57
160.09
156.98
153.79
150.67
147.57
144.53
141.44
138.48
135.50
132.59
129.67
126.78
123.96
121.14
118.37
115.53
112.76
109.97
107.22
104.46
101.71
88.05
74.65
61.39
48.43
35.70
23.34
11.08
-0.85
-12.44
-23.66
-34.68
-22.90
-22.62
-22.56
-22.58
-22.66
-22.78
-22.92
-23.06
-23.23
-23.40
-23.58
-23.76
-23.95
-24.14
-24.34
-24.53
-24.72
-24.93
-25.10
-25.29
-25.48
-25.69
-25.88
-26.04
-26.89
-27.67
-28.07
-27.72
-26.66
-25.28
-23.76
-22.33
-21.13
-20.03
-19.00
0.072
0.074
0.074
0.074
0.074
0.073
0.071
0.070
0.069
0.068
0.066
0.065
0.063
0.062
0.061
0.059
0.058
0.057
0.056
0.054
0.053
0.052
0.051
0.050
0.045
0.041
0.040
0.041
0.046
0.054
0.065
0.076
0.088
0.100
0.112
16.89
9.26
4.62
0.54
-2.26
-4.58
-6.59
-8.26
-9.68
-10.91
-12.02
-13.01
-13.77
-14.46
-15.00
-15.44
-15.78
-16.07
-16.19
-16.23
-16.15
-16.20
-16.12
-15.93
-13.42
-8.35
-0.44
9.10
16.13
19.97
20.39
17.75
13.58
9.01
3.27
0.53
0.51
0.51
0.49
0.48
0.48
0.47
0.46
0.45
0.44
0.44
0.43
0.42
0.41
0.41
0.40
0.39
0.39
0.38
0.37
0.37
0.36
0.36
0.35
0.33
0.32
0.30
0.29
0.28
0.26
0.25
0.24
0.23
0.23
0.24
-14.49
-15.38
-17.35
-18.04
-20.59
-23.14
-25.89
-28.24
-31.05
-33.35
-35.96
-38.26
-40.57
-42.72
-44.90
-46.95
-48.94
-50.92
-52.95
-54.81
-56.73
-58.62
-60.36
-62.11
-69.84
-76.05
-81.51
-87.17
-93.37
-101.07
-111.19
-124.51
-137.46
-151.87
-165.58
1.00
1.04
1.06
1.08
1.09
1.10
1.12
1.13
1.14
1.16
1.17
1.19
1.21
1.22
1.25
1.27
1.29
1.32
1.34
1.36
1.39
1.42
1.46
1.48
1.66
1.89
2.08
2.11
1.99
1.81
1.62
1.48
1.38
1.30
1.22
5.57
5.47
5.41
5.37
5.33
5.28
5.23
5.18
5.13
5.07
5.02
4.96
4.91
4.86
4.80
4.75
4.70
4.66
4.61
4.57
4.52
4.48
4.44
4.40
4.20
3.99
3.79
3.59
3.39
3.19
3.01
2.82
2.64
2.47
2.31
Noise Parameters
Freq
(GHz)
Fmin
(dB)
Γopt
Mag
Γopt
Ang
Rn/Zo
Ga
(dB)
0.5
0.8
0.9
1
1.1
1.5
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
5.5
6
1.46
1.49
1.50
1.51
1.52
1.57
1.60
1.61
1.62
1.63
1.64
1.65
1.66
1.68
1.73
1.78
1.84
1.89
1.94
2.00
2.05
0.32
0.31
0.31
0.3
0.3
0.29
0.28
0.28
0.27
0.27
0.26
0.26
0.25
0.25
0.23
0.21
0.2
0.21
0.24
0.28
0.31
10.51
21.95
28.21
32.89
39.85
45.05
50.05
57.75
59.67
63.12
64.28
68.3
75.25
78.03
94.06
121.52
141.87
172.98
-169.13
-146.48
-133.04
0.37
0.35
0.34
0.34
0.33
0.30
0.28
0.27
0.27
0.26
0.26
0.25
0.24
0.24
0.21
0.18
0.16
0.15
0.14
0.16
0.19
16.5
16.3
16.19
16.1
16.0
15.61
15.2
15.02
14.9
14.8
14.65
14.58
14.48
14.39
13.98
13.39
12.9
12.45
12
11.59
11.1
6
Part Number Ordering Information
No. of
Devices
Container
MGA-52543-TR1
MGA-52543-TR2
3000
10000
7" Reel
13" Reel
MGA-52543-BLK
MGA-52543-TR1G
100
3000
antistatic bag
7" Reel
MGA-52543-TR2G
MGA-52543-BLKG
10000
100
13" Reel
antistatic bag
Part Number
Note: For lead-free option, the part number will have the
character “G” at the end.
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
1.30 (.051)
BSC
HE
E
1.15 (.045) BSC
b1
D
A2
A
A1
b
L
C
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
7
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.25
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
8 mm
42
USER
FEED
DIRECTION
42
42
42
COVER TAPE
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
8
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
Description
The MGA-52543 is a low noise,
linear RFIC amplifier GaAs
PHEMT (Pseudomorphic High
Electron Mobility Transistor)
designed for receiver applications
in the 300 MHz to 6.0 GHz
frequency range. The device
combines low noise performance
with high linearity to make it a
desirable choice for receiver front
end stages as well as driver
applications.
The MGA-52543 operates from a
+5 volt power supply and draws a
nominal current of 55 mA. The
RFIC is contained in a miniature
SOT-343 (SC-70 4-lead) package to
minimize printed circuit board
space. This package also offers
excellent thermal dissipation and
RF characteristics. The device is
focused at cellular/PCS
basestation applications.
The high frequency response of
the MGA-52543 extends through
6 GHz making it an excellent
choice for use in 5 GHz RLL as
well as 2.4 and 5.7 GHz spread
spectrum and ISM/license-free
band applications.
Internal, on-chip capacitors limit
the low end frequency response to
applications above approximately
300 MHz.
RF Input
To achieve lowest noise figure
performance, the input of the
MGA-52543 should be matched
from the system impedance
(typically 50Ω) to the optimum
source impedance for minimum
noise, Γopt. Since the real part of
the input of the device impedance
is near 50Ω and the reactive part
is capacitive, a simple series
inductor at the input is often all
that is needed to provide a
suitable noise match for many
applications.
RF Output
The RF Output port is closely
matched to 50 Ω, a simple series
inductor at the output will help to
improve the input match, gain and
power response of the device.
DC Bias
DC bias is applied to the MGA52543 through the RF Output
connection. Figure 1 shows how
an inductor (RFC) is used to
isolate the RF signal from the DC
supply. The bias line is capacitively bypassed to keep RF from
the DC supply lines and prevent
resonant dips or peaks in the
response of the amplifier.
The DC schematic for an MGA52543 amplifier circuit is shown in
Figure 1.
Typical performance of gain, noise
figure and P1dB output power over
a wide range of bias voltage is
shown in Figure 2.
20
16
12
NF
Gain
P1dB
8
4
1
2
3
4
5
SUPPLY VOLTAGE (V)
Figure 2. Gain, Noise Figure and Output Power
vs. Supply Voltage.
RFC
C2
L1
+5V
Figure 1. Schematic Diagram with Bias
Connections.
A DC blocking capacitor (C1) is
used at the output of the MMIC to
isolate the supply voltage from
succeeding circuits.
9
Setting the Bias Voltage for Linearity
The MGA-52543 will operate from
approximately 2 volts with
reduced performance. The MGA52543 typically pulls 53 mA at 5V.
The higher voltage increases
amplifier linearity by boosting
output power (P1dB) typically from
14 dBm at 3V to 18 dBm at 5V. An
absolute maximum recommended
supply voltage for this device is
5.5V. Optimum linearity performance is obtained at 5V supply.
0
C1
L2
42
Application Guidelines
The MGA-52543 is very easy to
use. For most applications, all that
is required to operate the MGA52543 is to apply +5 volts to the
RF output pin, and match the RF
input and output.
While the RF input terminal of the
MGA-52543 is at DC ground
potential, it should not be used as
a current sink. If the input is
connected directly to a preceding
stage that has a DC voltage
present, a blocking capacitor
should be used.
NF, GAIN, and P1dB (dB)
MGA-52543 Applications
Information
Input and output impedance and
noise figure for the amplifier are
unaffected by increasing the
supply voltage from 3V to 5V.
PCB Layout
A recommended PCB pad layout
for the miniature SOT-343 (SC-70)
package that is used by the MGA52543 is shown in Figure 3.
1.30
0.051
1.00
0.039
2.00
0.079
0.60
0.024
groundplane on the backside of
the PCB by means of plated
through holes (vias). The ground
vias should be placed as close to
the package terminals as practical.
At least one via should be located
next to each ground pin to assure
good RF grounding. It is a good
practice to use multiple vias to
further minimize ground path
inductance.
.090
0.035
1.15
0.045
Dimensions in inches
mm
Figure 3. Recommended PCB Pad Layout for
Agilent’s SC70 4L/SOT-343 Products.
This layout provides ample
allowance for package placement
by automated assembly equipment
without adding parasitics that
could impair the high frequency
RF performance of the MGA52543. The layout is shown with a
footprint of a SOT-343 package
superimposed on the PCB pads for
reference.
Starting with the package pad
layout in Figure 3, an RF layout
similar to the one shown in
Figure 4 is a good starting point
for microstripline designs using
the MGA-52543 amplifier.
RF
OUTPUT
42
RF
INPUT
Figure 4. RF Layout.
RF Grounding
Adequate grounding of pins 1 and
4 of the RFIC are important to
maintain device stability and RF
performance. Each of the ground
pins should be connected to the
10
PCB Materials
FR-4 or G-10 type materials are
good choices for most low cost
wireless applications using single
or multi-layer printed circuit
boards. Typical single-layer board
thickness is 0.020 to 0.031 inches.
Circuit boards thicker than 0.031
inches are not recommended due
to excessive inductance in the
ground vias.
For noise figure critical or higher
frequency applications, the
additional cost of PTFE/glass
dielectric materials may be
warranted to minimize transmission line loss at the amplifier’s
input.
Application Example
The printed circuit layout in
Figure 5 is a multi-purpose layout
that will accommodate components for using the MGA-52543 for
RF inputs from 100 MHz through
6 GHz. This layout is a
microstripline design (solid
groundplane on the backside of
the circuit board) with 50 Ω
interfaces for the RF input and
output. The circuit is fabricated on
0.031-inch thick FR-4 dielectric
material. Plated through holes
(vias) are used to bring the ground
to the top side of the circuit where
needed. Multiple vias are used to
reduce the inductance of the paths
to ground.
Agilent
Technologies
MGA - 5X
IP 9/99
IN
OUT
Vd
Figure 5. Multi-purpose PCB Layout.
1.9 GHz Design
To illustrate the simplicity of using
the MGA-52543, a 1.9 GHz amplifier for PCS type receiver applications is presented.
For low noise amplifier applications, the MGA-52543 is internally
matched for low noise figure. The
magnitude of Γopt at 1900 MHz is
typically 0.27, additional impedance matching may improve noise
figure by 0.1 dB.
Without external matching the
typical input return loss for the
MGA-52543 is approximately 5 dB.
The input return loss may be
improved significantly with the
addition of a series inductor. At
1900 MHz for example, the
addition of a series inductor of
3.3 nH will improve the input
return loss to greater than 10 dB.
The output of the MGA-52543 is
already well matched to 50Ω and
no additional matching is needed.
However, using another series
inductor on the output of the
MGA-52543 significantly improves
the output match, gain and the IP3
performance of the device.
2.2 nH
42
18 pF
22 nH
360 pF
The amplifier input intercept point
IIP3 was measured at a nominal
+17.5 dBm. P1dB measured
+17.5 dBm.
The completed 1.9 GHz amplifier
for this example with all components and SMA connectors
assembled is shown in Figure 8.
3.3 nH
Figure 7. Schematic of 1.9 GHz Circuit.
A schematic diagram of the
complete 1.9 GHz circuit with the
input and output match and DC
biasing is shown in Figure 7.
DC bias is applied to the
MGA-52543 through the RFC at
the RF output pin. The power
supply connection is bypassed to
ground with capacitor C2. Provision is made for an additional
bypass capacitor, C3, to be added
to the bias line near the +5 volt
connection. C3 will not normally
be needed unless several stages
are cascaded using a common
power supply.
Since the input terminal of the
MGA-52543 is at ground potential,
an input DC blocking capacitor is
not needed unless the amplifier is
connected to a preceding stage
that has a voltage present at this
point. The values of the DC
blocking and RF bypass capacitors should be chosen to provide
a small reactance (typically < 5Ω)
at the lowest operating frequency.
For this 1.9 GHz design example,
18 pF capacitors with a reactance
of 4.5 Ω are adequate. The reactance of the RF choke (RFC)
should be high (i.e., several
hundred ohms) at the lowest
frequency of operation. A 22 nH
inductor with a reactance of 262 Ω
at 1.9 GHz is sufficiently high to
minimize the loss from circuit
loading.
L2
2.2 nH LL2012-F2N2
RFC
22 nH LL1608-FH22N
C1
18 pF chip capacitor
C2
470 pF chip capacitor
C3
10000 pF chip capacitor
Table 1. Component Parts List for the
MGA-52543 Amplifier at 1900 MHz.
Gain
12
8
4
NF
0
1.6
Performance of MGA-52543
1900 MHz Amplifier
The amplifier is biased at a Vd of
5 volts. The measured noise figure
and gain of the completed amplifier is shown in Figure 9. Noise
figure is a nominal 2.0 to 2.2 dB
from 1800 through 2000 MHz. Gain
is a minimum of 14.3 dB from
1800 MHz through 2000 MHz.
Measured input and output return
loss is shown in Figure 10. The
input return loss at 1900 MHz is
11.2 dB with a corresponding
output return loss of 21.9 dB.
2.6
Input RL
-8
-12
-16
Output RL
-20
-24
1.6
1.8
2
2.2
2.4
FREQUENCY (GHz)
Figure 10. Input and Output Return Loss
Results.
MGA - 5X
IP 9/99
C1
42
RFC
OUT
C3
Vd
11
2.4
-4
C2
Figure 8. Complete 1.9 GHz Amplifier Circuit.
2.2
0
L2
L1
2
Figure 9. Gain and Noise Figure Results.
Agilent
Technologies
IN
1.8
FREQUENCY (GHz)
INPUT and OUTPUT RETURN LOSS (dB)
+5V
3.3 nH LL1608-FH3N3
GAIN and NOISE FIGURE (dB)
16
L1
2.6
16
GAIN and NOISE FIGURE (dB)
900 MHz Design
The 900 MHz example follows the
same design approach that was
described in the previous
1900 MHz design. A schematic
diagram of the complete 900 MHz
circuit with the input and output
match and DC biasing is shown in
Figure 11 and the component part
list is show in Table 2. The magnitude of Γopt at 900MHz is typically
0.33. See note on designs at other
frequencies for more information.
Gain
12
8
4
NF
0
0.4
0.6
0.8
1.0
1.2
1.4
FREQUENCY (GHz)
Figure 12. Gain and Noise Figure Results.
42
56 pF
47 nH
1000 pF
12 nH
+5V
Figure 11. Schematic of 900 MHz Circuit.
L1
12nH LL1608-FH12N
L2
3.3nH LL2012-F3N3
RFC
47nH LL1608-FH47N
C1
56pF chip capacitor
C2
1000pF chip capacitor
C3
10000pF chip capacitor
INPUT and OUTPUT RETURN LOSS (dB)
3.3 nH
-2
Input RL
-6
-10
-14
-18
-22
-26
Output RL
-30
0.4
0.6
0.8
1.0
1.2
1.4
FREQUENCY (GHz)
Table 2. Component Parts List for the
MGA-52543 Amplifier at 900 MHz.
Performance of MGA-52543 900 MHz
Amplifier
The amplifier is biased at a Vd of
5 volts. The measured noise figure
and gain of the completed amplifier is shown in Figure 12. Noise
figure is a nominal 2.0 to 2.2 dB
from 800 through 1000 MHz. Gain
is a minimum of 15.3 dB from
800 MHz through 1000 MHz.
12
For frequencies below 1000 MHz,
the series input inductor approach
provides a good match but may
not completely noise match the
MGA-52543. A two-element
matching circuit may be required
at lower frequencies to exactly
match the input to Γopt . At lower
frequencies, the real part of Γopt
has started to move away from
50Ω (i.e., away from the R = 1
circle on the Smith chart) as the
angle of Γopt decreases. A small
shunt capacitor (typically 1.0 pF at
900 MHz to 1.8 pF at 400 MHz)
added between the input pin and
the adjacent ground pad to create
a shunt C-series L matching
network will realize an improvement in noise figure of several
tenths of a dB. A lower value for
L1 may be needed depending on
the actual length of the input line
between pin 1 and L1 as well as
the value of the shunt C.
Figure 13. Input and Output Return Loss
Results.
Measured input and output return
loss is shown in Figure 13. The
input return loss at 900 MHz is
15.2 dB with a corresponding
output return loss of 21.9 dB.
The amplifier input intercept point
IIP3 was measured at a nominal
+17.5 dBm. P1dB measured
+17.8 dBm.
Designs for Other Frequencies
The same basic design approach
described above for 1.9 GHz can
be applied to other frequency
bands. Inductor values for matching the input for low noise figure
are shown in Table 3.
For frequencies above 3.0 GHz,
the input inductor, L1, can be
replaced by a small shunt capacitor to optimize the input and noise
match.
Frequency
L1, nH
L2, nH
C4, pF
400 MHz
22
8.2
2.2
900 MHz
10
3.3
1.0
1900 MHz
3.3
2.2
none
2.4 GHz
1.5
none
1.0*
3.5GHz
none
none
1.0*
5.8GHz
none
none
0.5
Table 3. Input and Output Inductor Values for
Various Operating Frequencies.
Actual component values may
differ slightly from those shown in
Table 3 due to variations in circuit
layout, grounding, and component
parasitics. A CAD program such as
Agilent Technologies ADS ® is
recommended to fully analyze and
account for these circuit variables.
Final Note on Performance
An effective way of lowering
production costs is to replace
lumped elements with microstrip
components. The inductors for the
input and output match maybe
printed elements as well as
lumped elements. To save board
space the use of lumped elements
at lower frequencies is recommended. The effects of leaving the
MGA-52543 unmatched can have a
negative effect on the performance of the device. Gain and
OIP3 performance are greatly
reduced by using the device
unmatched. Table 4 gives typical
performance at 1900 MHz for the
MGA-52543 in an unmatched
configuration using the evaluation
board shown in Figure 5.
Test
Unmatched
Results
Matched
Results
Gain
12.5 dB
14.3 dB
OIP3
30.0 dBm
31.8 dBm
IIP3
17.5 dBm
17.5 dBm
P1dB
17.0 dBm
17.5 dBm
Input RL
5.1 dB
10.2 dB
Out RL
10.2 dB
21.9 dB
Table 4. Results of Matching Circuits on
MGA-52543.
Hints and Troubleshooting
• Oscillation
Unconditional stability of the
MGA-52543 is dependent on
having very good grounding.
Inadequate device grounding or
poor PCB layout techniques could
cause the device to be potentially
unstable.
Even though a design may be
unconditionally stable (K > 1 and
B1 > 0) over its full frequency
range, other possibilities exist that
may cause an amplifier circuit to
oscillate. One thing to check for, is
feedback in bias circuits. It is
important to capacitively bypass
the connections to active bias
13
circuits to ensure stable operation.
In multistage circuits, feedback
through bias lines can also lead to
oscillation.
Components of insufficient quality
for the frequency range of the
amplifier can sometimes lead to
instability. Also, component values
that are chosen to be much higher
in value than is appropriate for the
application can present a problem.
In both of these cases, the components may have reactive parasitics
that make their impedances very
different than expected. Chip
capacitors may have excessive
inductance, or chip inductors can
exhibit resonances at unexpected
frequencies. For example it is a
good idea not to use the same
type/value of inductors for L1 and
L2. It can be shown that if the selfresonant frequency of the inductors used on the input and the
output of the MGA-52543 are the
same, then the device can be left
unterminated at high frequencies.
• A Note on Supply Line
Bypassing
Multiple bypass capacitors are
normally used throughout the
power distribution within a
wireless system. Consideration
should be given to potential
resonances formed by the combination of these capacitors and the
inductance of the DC distribution
lines. The addition of a small value
resistor in the bias supply line
between bypass capacitors will
often de-Q the bias circuit and
eliminate resonance effects.
Statistical Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described with
values that are either “minimum or
maximum,” “typical,” or “standard
deviations.”
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on of a minimum of 400
parts taken from three nonconsecutive process lots of
semiconductor wafers. The data
derived from product characterization tends to be normally
distributed, e.g., fits the standard
bell curve.
Parameters considered to be the
most important to system performance are bounded by minimum
or maximum values. For the
MGA-52543, these parameters are:
Input IP3 (IIP3test), Gain (Gtest),
Noise Figure (NFtest), and Device
Current (Id). Each of the guaranteed parameters is 100% tested as
part of the manufacturing process.
Values for most of the parameters
in the table of Electrical Specifications that are described by typical
data are the mathematical mean
(µ), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as S-parameters or Noise
Parameters and the performance
curves, the data represents a
nominal part taken from the
center of the characterization
distribution. Typical values are
intended to be used as a basis for
electrical design.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MGA-52543, but
to also evaluate and optimize
trade-offs that affect a complete
wireless system, the standard
deviation (µ) is provided for many
of the Electrical Specifications
parameters (at 25°C) in addition
to the mean. The standard deviation is a measure of the variability
about the mean. It will be recalled
that a normal distribution is
completely described by the mean
and standard deviation.
Standard statistics tables or
calculations provide the probability of a parameter falling between
any two values, usually symmetrically located about the mean.
Referring to Figure 14 for example, the probability of a parameter being between ±1σ is 68.3%;
between ±2σ is 95.4%; and between ±3σ is 99.7%.
68%
95%
99%
-3σ
-2σ
-1σ Mean (µ) +1σ +2σ
(typical)
+3σ
Parameter Value
Figure 14. Normal Distribution.
Phase Reference Planes
The positions of the reference
planes used to specify S-parameters and Noise Parameters for the
MGA-52543 are shown in
Figure 15. As seen in the illustration, the reference planes are
located at the point where the
package leads contact the test
circuit.
Reference Planes
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-343
package, will reach solder reflow
temperatures faster than those
with a greater mass.
The MGA-52563 is qualified to the
time-temperature profile shown in
Figure 16. This profile is representative of an IR reflow type of
surface mount assembly process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporating solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low
enough to not cause deformation
of the board or damage to components due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235°C.
These parameters are typical for a
surface mount assembly process
for the MGA-52543. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
Electrostatic Sensitivity
RFICs are electrostatic discharge (ESD)
sensitive devices.
Although the MGA-52543 is robust
in design, permanent damage may
occur to these devices if they are
subjected to high energy electrostatic discharges. Electrostatic
charges as high as several thousand volts (which readily accumulate on the human body and on
test equipment) can discharge
without detection and may result
in degradation in performance,
reliability, or failure.
Electronic devices may be subjected to ESD damage in any of
the following areas:
• Storage & handling
• Inspection & testing
• Assembly
• In-circuit use
The MGA-52543 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting, testing,
assembling, and using these
devices to avoid damage.
Test Circuit
250
Figure 15. Phase Reference Planes.
TMAX
TEMPERATURE (°C)
200
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
TIME (seconds)
Figure 16. Surface Mount Assembly Profile.
14
240
300
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5968-9671EN
November 22, 2004
5989-1806EN