HANBit HSD4M64B4W Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD4M64B4W GENERAL DESCRIPTION The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible. FEATURES • Part Identification HSD4M64B4W-10 : 100MHz (CL=2) HSD4M64B4W-10L : 100MHz (CL=3) HSD4M64B4W-12 : 125MHz (CL=3) HSD4M64B4W-13 : 133MHz (CL=3) • Burst mode operation • Auto & self refresh capability (4096 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ±0.3V power supply • MRS cycle with address key programs - Latency (Access from column address) - Burst length (1, 2, 4, 8 & Full page) - Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • The used device is 1M x 16bit x 4Banks SDRAM URLwww.hbe.co.kr Rev.0.0 (March / 2002) 1 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W PIN ASSIGNMENT PIN Front PIN Back PIN Frontl PIN Back PIN Front 1 Vss 3 DQ0 5 7 PIN Back 2 Vss 49 DQ13 50 DQ45 97 4 DQ32 51 DQ14 52 DQ46 99 DQ22 98 DQ54 DQ23 100 DQ55 DQ1 6 DQ33 53 DQ15 54 DQ47 DQ2 8 DQ34 55 Vss 56 Vss 101 VCC 102 VCC 103 A6 104 A7 9 DQ3 10 DQ35 57 NC 58 NC 105 A8 106 BA0 11 VCC 12 VCC 59 NC 60 NC 107 Vss 108 Vss 13 DQ4 14 DQ36 61 CLK0 62 CKE0 109 A9 110 BA1 15 DQ4 16 DQ37 63 VCC 64 VCC 111 A10_AP 112 A11 17 DQ6 18 DQ38 65 /RAS 66 /CAS 113 VCC 114 VCC 19 DQ7 20 DQ39 67 /WE 68 NC(CKE1) 115 DQM2 116 DQM6 21 Vss 22 Vss 69 /CS0 70 NC(A12) 117 DQM3 118 DQM7 23 DQM0 24 DQM4 71 NC(/CS1) 72 NC 119 Vss 120 Vss 25 DQM1 26 DQM5 73 NC 74 NC(CLK1) 121 DQ24 122 DQ56 27 VCC 28 VCC 75 Vss 76 Vss 123 DQ25 124 DQ57 29 A0 30 A3 77 NC 78 NC 125 DQ26 126 DQ58 31 A1 32 A4 79 NC 80 NC 127 DQ27 128 DQ59 33 A2 34 A5 81 VCC 82 VCC 129 VCC 130 VCC 35 Vss 36 Vss 83 DQ16 84 DQ48 131 DQ28 132 DQ60 37 DQ8 38 DQ40 85 DQ17 86 DQ49 133 DQ29 134 DQ61 39 DQ9 40 DQ41 87 DQ18 88 DQ50 135 DQ30 136 DQ62 41 DQ10 42 DQ42 89 DQ19 90 DQ51 137 DQ31 138 DQ63 43 DQ11 44 DQ43 91 Vss 92 Vss 139 Vss 140 Vss 45 VCC 46 VCC 93 DQ20 94 DQ52 141 SDA 142 SCL 47 DQ12 48 DQ44 95 DQ21 96 DQ53 143 VCC 144 VCC *Pin Names Pin Name Function Pin Name Function A0 ~ A11 Address input (Multiplexed) BA0 ~ BA1 Select bank DQ0 ~ DQ63 Data input/output CLK0 Clock input CKE0 Clock enable input /CS0 Chip select input /RAS Row address strobe /CAS Column address strobe /WE Write enable DQM0 ~ 7 DQM Vcc Power supply (3.3V) Vss Ground SDA Serial data I/O SCL Serial clock NC No connection URLwww.hbe.co.kr Rev.0.0 (March / 2002) 2 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W FUNCTIONAL BLOCK DIAGRAM DQ0-63 CKE0 /CAS CKE CAS /RAS RAS /CS0 CE U1 CLK DQ0-7,DQ32-39 DQM0 WE CKE CAS A0-A11 U2 DQM1 WE CKE CAS 55 A0-A11 U3 BA0-1 DQM1 DQM5 CLK DQ16-23,DQ48- DQM2 RAS DQM2 CKE CAS DQM6 CLK U4 DQ24-31,DQ56-63 RAS CE DQM0 DQM4 CLK DQ8-15,DQ40-47 RAS CE BA0-1 CLK0 DQM3 WE A0-A11 BA0-1 DQM3 DQM7 /WE A0 – A11 BA0-1 Vcc Two 0.1uF Capacitors per each SDRAM Vss URLwww.hbe.co.kr Rev.0.0 (March / 2002) 3 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W PIN FUNCTION DESCRIPTION PIN NAME INPUT FUNCTION CLK System clock Active on the positive going edge to sample all inputs. /CS Chip enable Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM CKE Clock enable Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. CKE should be enabled 1CLK+tSS prior to valid command. A0 ~ A11 Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA7 BA0 ~ BA1 Bank select address Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. /RAS Row address strobe Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. /CAS /WE Column address Latches column addresses on the positive going edge of the CLK with CAS low. strobe Enables column access. Write enable Enables write operation and row precharge. Latches data in starting from CAS, WE active. DQM0 ~ 7 Data input/output Makes data output Hi-Z, tSHZ after the clock and masks the output. mask Blocks data input when DQM active. (Byte masking) DQ0 ~ DQ63 Data input/output Data inputs/outputs are multiplexed on the same pins. VDD/VSS Power Power and ground for the input buffers and the core logic. supply/ground ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN ,OUT -1V to 4.6V Voltage on Vcc Supply Relative to Vss Vcc -1V to 4.6V Power Dissipation PD 4W TSTG -55oC to 150oC Voltage on Any Pin Relative to Vss Storage Temperature Short Circuit Output Current IOS 400mA Notes: Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. URLwww.hbe.co.kr Rev.0.0 (March / 2002) 4 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W DC OPERATING CONDITIONS (Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) ) PARAMETER SYMBOL MIN TYP. MAX UNIT NOTE Supply Voltage Vcc 3.0 3.3 3.6 V Input High Voltage VIH 2.0 3.0 Vcc+0.3 V 1 Input Low Voltage VIL -0.3 0 0.8 V 2 Output High Voltage VOH 2.4 - - V IOH = -2mA Output Low Voltage VOL - - 0.4 V IOL = 2mA Input leakage current I LI -12 12 uA Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 3 CAPACITANCE (VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV) DESCRIPTION SYMBOL MIN MAX UNITS CCLK 10 16 pF CIN 10 20 pF Address CADD 10 20 pF DQ (DQ0 ~ DQ63) COUT 16 26 pF Clock /RAS, /CAS,/WE,/CS, CKE, DQM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) TEST PARAMETER VERSION SYMBOL CONDITION -13 -12 -10 -10L 440 440 400 400 UNIT NOTE mA 1 Burst length = 1 Operating current (One bank active) ICC1 tRC ≥ tRC(min) IO = 0mA Precharge standby current in ICC2P power-down mode ICC2PS CKE ≤ VIL(max) 4 mA 4 mA 60 mA tCC=10ns CKE & CLK ≤ VIL(max) tCC=∞ CKE ≥ VIH(min) Precharge standby current in non power-down mode ICC2N CS* ≥ VIH(min), tCC=10ns Input signals are changed one time during 20ns URLwww.hbe.co.kr Rev.0.0 (March / 2002) 5 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W CKE ≥ VIH(min) ICC2NS CLK ≤ VIL(max), tCC=∞ 24 Input signals are stable Active standby current power-down mode in ICC3P ICC3PS CKE ≤ VIL(max), tCC=10ns 12 mA CKE&CLK ≤ VIL(max) 12 tCC=∞ CKE≥VIH(min), Active standby current in ICC3N CS*≥VIH(min), tCC=10ns non power-down mode one time during 20ns (One bank active) CKE≥VIH(min) ICC3NS 100 Input signals are changed CLK ≤VIL(max), mA tCC=∞ 60 Input signals are stable IO = 0 mA Operating current Page burst ICC4 (Burst mode) 540 520 440 440 mA 1 540 520 440 440 mA 2 4Banks Activated tCCD = 2CLKs Refresh current ICC5 Self refresh current ICC6 tRC ≥ tRC(min) CKE ≤ 0.2V 4 mA 1.6 mA Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). AC OPERATING TEST CONDITIONS (vcc = 3.3V ± 0.3V, TA = 0 to 70°C) PARAMETER AC Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition URLwww.hbe.co.kr Rev.0.0 (March / 2002) Value UNIT 2.4/0.4 V 1.4 V tr/tf = 1/1 Ns 1.4 V See Fig. 2 6 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W Vtt=1.4V 3.3V 1200Ω 50Ω DOUT 870Ω DOUT Z0=50Ω 50pF* 50pF VOH (DC) = 2.4V, IOH = -2mA VOL (DC) = 0.4V, IOL = 2mA (Fig. 2) AC output load circuit (Fig. 1) DC output load OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) VERSION PARAMETER SYMBOL -13 -12 -10 -10L UNIT NOTE Row active to row active delay tRRD(min) 15 16 20 20 ns 1 RAS to CAS delay tRP(min) 20 20 20 20 ns 1 Row precharge time tRP(min) 20 20 20 20 ns 1 tRAS(min) 45 48 50 50 ns 1 Row active time Row cycle time tRAS(max) tRC(min) 100 65 68 ns 70 70 2 ns 1 CLK 2.5 Last data in to row precharge tRDL(min) Last data in to Active delay tDAL(min) Last data in to new col. address delay tCDL(min) 1 CLK 2 Last data in to burst stop tBDL(min) 1 CLK 2 Col. address to col. address delay tCCD(min) 1 CLK 3 ea 4 2 CLK + 20 ns CAS latency=3 2 Number of valid output data CAS latency=2 - 1 Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. . URLwww.hbe.co.kr Rev.0.0 (March / 2002) 7 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W AC CHARACTERISTICS (AC operating conditions unless otherwise noted) SYMBO -13 -12 -10 -10L PARAMETER L CLK cycle time MIN MAX MIN MAX MIN MAX MIN UNIT NOTE ns 1 ns 1,2 ns 2 MAX CAS 7.5 8 10 10 latency=3 tCC 1000 1000 1000 1000 CAS - - 10 12 latency=2 CLK to valid CAS output delay latency=3 5.4 6 6 6 tSAC CAS - - 6 7 latency=2 Output data CAS hold time latency=3 2.7 3 3 3 tOH CAS - - 3 3 latency=2 CLK high pulse width tCH 2.5 3 3 3 ns 3 CLK low pulse width tCL 2.5 3 3 3 ns 3 Input setup time tSS 1.5 2 2 2 ns 3 Input hold time tSH 0.8 1 1 1 ns 3 CLK to output in Low-Z tSLZ 1 1 1 1 ns 3 2 CLK to output CAS in Hi-Z latency=3 5.4 6 6 6 ns - - 6 7 ns tSHZ CAS latency=2 Notes : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to the parameter. URLwww.hbe.co.kr Rev.0.0 (March / 2002) 8 HANBit Electronics Co.,Ltd. HANBit HSD4M64B4W SIMPLIFIED TRUTH TABLE COMMAND Register Mode register set Auto refresh Refresh Self refres h Entry Exit Bank active & row addr. Read & column address Write & column address Auto CK E n-1 CK E n /C S /R A S /C A S /W E D Q M H X L L L L X OP code L L L H X X L H H H H X X X X X L L H H H H L L H H X X BA 0,1 V precharge disable Auto precharge H X L H L H X H Auto X L H L L X H Bank selection e All banks Clock suspend or active power down Precharge power down mode X H X Entry H L Exit L H Entry Exit DQM No operation command 3 3 3 3 Column H (A0 ~ A7) L Address 4,5 H L L H L H H L L L H X X X L V V V L X X X X H X X X L H H H H X X X L V V V H H L X X H X X X L H H H X X X 9 4 (A0 ~ A7) 4,5 X V L X H 6 X X X X X X V X X X (V=Valid, X=Don't care, H=Logic high, L=Logic low) Notes : 1. OP Code : Operand code A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected. If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) URLwww.hbe.co.kr Rev.0.0 (March / 2002) 4 Address H disable Precharg 1,2 L V precharge Burst Stop NOTE Column precharge disable A11 A9~A0 Row address V disable Auto A10/ AP HANBit Electronics Co.,Ltd. 7 HANBit HSD4M64B4W TIMING DIAGRAMS Please refer to attached timing diagram chart (II) PACKAGING INFORMATION Unit : Inch [mm] PCB Thickness: 1.0mm (0.9t - 1.1t) Immersion Gold PCB Pattern ORDERING INFORMATION Part Number Density Org. HSD4M64B4W-10 32MByte 4M x 64 HSD4M64B4W -10L 32MByte 4M x 64 HSD4M64B4W -12 32MByte 4M x 64 HSD4M64B4W -13 32MByte 4M x 64 URLwww.hbe.co.kr Rev.0.0 (March / 2002) Package 144 PinSODIMM 144 PinSODIMM 144 PinSODIMM 144 PinSODIMM 10 Ref. Vcc MODE 4K 3.3V SDRAM 4K 3.3V SDRAM 4K 3.3V SDRAM 4K 3.3V SDRAM MAX.frq CL2 100MHz CL3 100MHz CL3 125MHz CL 3 133MHz HANBit Electronics Co.,Ltd.