LL101A, LL101B, LL101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • Integrated protection ring against static discharge • Low capacitance • Low leakage current • This diode is also available in the DO-35 case with type designation SD101A, B, C and in the SOD-123 case with type designation SD101AW-V, SD101BW-V, SD101CW-V • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 9371 Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Applications • • • • • • HF-Detector Protection circuit Diode for low currents wits a low supply voltage Small battery charger Power supplies DC/DC converter for notebooks Parts Table Part Type differentiation Ordering code Remarks LL101A VR = 60 V, VF at IF 1 mA max. 410 mV LL101A-GS18 or LL101A-GS08 Tape and Reel LL101B VR = 50 V, VF at IF 1 mA max. 400 mV LL101B-GS18 or LL101B-GS08 Tape and Reel LL101C VR = 40 V, VF at IF 1 mA max. 390 mV LL101C-GS18 or LL101C-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Value Unit LL101A VRRM 60 V LL101B VRRM 50 V LL101C VRRM 40 V Ptot 4001) mW Forward continuous current IF 30 mA Maximum single cycle surge 10 µs square wave IFSM 2 A Peak inverse voltage Power dissipation (infinite heatsink) 1) Valid provided that electrodes are kept at ambient temperature Document Number 85626 Rev. 1.3, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 LL101A, LL101B, LL101C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Tj 125 °C Tstg - 65 to + 150 °C RthJA 320 K/W Junction temperature Storage temperature range Thermal resistance junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Breakdown Voltage Leakage current Forward voltage drop IR = 10 µA Symbol Min V(BR) 60 Max Unit V LL101B V(BR) 50 V 40 LL101C V(BR) LL101A IR 200 nA VR = 40 V LL101B IR 200 nA VR = 30 V LL101C IR 200 nA IF = 1 mA LL101A VF 410 mV IF = 1 mA LL101B VF 400 mV IF = 1 mA LL101C VF 390 mV LL101A VF 1000 mV LL101B VF 950 mV LL101C VF 900 mV LL101A CD 2.0 pF LL101B CD 2.1 pF LL101C CD 2.2 pF trr 1 ns VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR Reverse recovery time Typ. VR = 50 V IF = 15 mA Diode capacitance Part LL101A V Typical Characteristics Tamb = 25 °C, unless otherwise specified gll101a_01 gll101a_02 Figure 1. Typ. IF vs. VF for primary conduction through the Schottky barrier www.vishay.com 2 Figure 2. Typ. IF of combination Schottky barrrier and PN junction guard ring For technical questions within your region, please contact one of the following: Document Number 85626 [email protected], [email protected], [email protected] Rev. 1.3, 05-Aug-10 LL101A, LL101B, LL101C Vishay Semiconductors gll101a_04 gll101a_03 Figure 3. Typical Variation of Reverse Current at Various Temperatures Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage Package Dimensions in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85626 Rev. 1.3, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MiniMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 84013 Rev. 1.3, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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