IRF IRHLF770Z4 Simple drive requirement Datasheet

PD-94695F
2N7621T2
IRHLF770Z4
60V, N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHLF770Z4 100K Rads (Si)
0.6Ω
ID
1.6A*
IRHLF730Z4
1.6A*
300K Rads (Si)
0.6Ω
T0-39
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available IRHLF7970Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.6*
1.0*
6.4
5.0
0.04
±10
6.9
1.6
0.5
3.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
For footnotes refer to the last page
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09/16/10
IRHLF770Z4, 2N7621T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
60
—
—
V
—
0.08
—
V/°C
—
—
0.60
Ω
1.0
—
1.1
—
—
—
-3.5
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
2.6
0.8
1.5
6.5
14
30
13
—
nA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 1.0A Ã
VDS = VGS, ID = 250µA
nC
V DS = 10V, IDS = 1.0A Ã
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.6A
VDS = 30V
ns
VDD = 30V, ID = 1.6A,
VGS = 4.5V, RG = 24Ω
µA
nH
Measured from Drain lead (6mm/0.25in
from package)to Source lead (6mm/0.25in
from package)with Source wire interanally
bonded from Source pin to Drain pad
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate Resistance
—
—
—
152
39
1.6
—
—
—
pF
17
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.6*
6.4
1.2
78
150
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.6A, VGS = 0V Ã
Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
25
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLF770Z4, 2N7621T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Up to 300K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage „
Units
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
µA
—
—
0.6
1.2
Ω
V
V
nA
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
VGS = 4.5V, ID = 1.0A
VGS = 0V, ID = 1.6A
1. Part numbers IRHLF770Z4, IRHLF730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-2V
-4V
-5V
-6V
-7V
300 ± 7.5%
38 ± 7.5%
60
60
60
60
60
35
62 ± 5%
355 ± 7.5%
33 ± 7.5%
60
60
60
60
30
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
60
60
60
40
-
-
Bias VDS (V)
38 ± 5%
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLF770Z4, 2N7621T2
10
Pre-Irradiation
10
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
1
2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
2.25V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current ( Α)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150°C
T J = 25°C
1
VDS = 25V
15
60µs PULSE WIDTH
0
ID = 1.6A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
4
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHLF770Z4, 2N7621T2
4
ID = 1.6A
3.5
3
2.5
2
T J = 150°C
1.5
T J = 25°C
1
0.5
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
10 11 12
1.2
1.0
T J = 150°C
0.8
0.6
T J = 25°C
0.4
Vgs = 4.5V
0.2
0
1
2
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
4
5
6
7
Fig 6. Typical On-Resistance Vs
Drain Current
80
3.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
3
ID, Drain Current (A)
70
60
2.5
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHLF770Z4, 2N7621T2
250
12
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
150
Coss
100
50
Crss
0
VDS = 48V
VDS = 30V
VDS = 12V
ID = 1.6A
VGS, Gate-to-Source Voltage (V)
200
C, Capacitance (pF)
Pre-Irradiation
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
VDS , Drain-to-Source Voltage (V)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
3.0
10
1
TJ = 150°C
T J = 25°C
I D , Drain Current (A)
ISD , Reverse Drain Current ( Α)
2.5
2.0
1.5
1.0
0.5
VGS = 0V
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
25
50
75
100
125
TC , Case Temperature ( °C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHLF770Z4, 2N7621T2
14
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1
1ms
10ms
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
12
TOP
10
BOTTOM
ID
0.7A
1.0A
1.6A
8
6
4
2
0
1
10
100
VDS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
100
D = 0.50
10
0.20
P DM
0.10
1
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.05
0.02
0.01
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLF770Z4, 2N7621T2
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLF770Z4, 2N7621T2
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 5.4 mH
Peak IL = 1.6A, VGS = 10V
 ISD ≤ 1.6A, di/dt ≤ 92A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1 - SOURCE
2 - GATE
3 - DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2010
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