Yea Shin MUN5112 Bias resistor transistor Datasheet

DATA SHEET
MUN511 Series
SEMICONDUCTOR
Bias Resistor Transistor
H
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
SOT–323 (SC–70)
This new series of digital transistors is designed to replace a single
6X
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
M
6X
=Specific Device Code
X
M
=(See Marking Table)
=Date Code
MARKINGDIAGRAM
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or reflow.
PIN 2
PIN 1
BASE
(INPUT)
R1
R2
COLLECTOR
(OUTPUT)
PIN 3
EMITTER
(GROUND)
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
PD
202 (Note 1)
TA = 25°C
310 (Note 2)
Derate above 25°C
1.6 (Note 1)
2.5 (Note 2)
Thermal Resistance –
RθJA
618 (Note 1)
Junction-to-Ambient
403 (Note 2)
Thermal Resistance –
RθJL
280 (Note 1)
Junction-to-Lead
332 (Note 2)
Junction and Storage
TJ, Tstg
–55 to +150
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
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1
Unit
mW
°C/W
°C/W
°C/W
°C
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MUN511 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111
SC–70/SOT–323
6A
10
10
3000/Tape & Reel
MUN5112
SC–70/SOT–323
6B
22
22
3000/Tape & Reel
MUN5113
SC–70/SOT–323
6C
47
47
3000/Tape & Reel
MUN5114
SC–70/SOT–323
6D
10
47
3000/Tape & Reel
MUN5115
SC–70/SOT–323
6E
10
∞
3000/Tape & Reel
MUN5116
SC–70/SOT–323
6F
4.7
∞
3000/Tape & Reel
MUN5130
SC–70/SOT–323
6G
1.0
1.0
3000/Tape & Reel
MUN5131
SC–70/SOT–323
6H
2.2
2.2
3000/Tape & Reel
MUN5132
SC–70/SOT–323
6J
4.7
4.7
3000/Tape & Reel
MUN5133
SC–70/SOT–323
6K
4.7
47
3000/Tape & Reel
MUN5134
SC–70/SOT–323
6L
22
47
3000/Tape & Reel
MUN5135
SC–70/SOT–323
6M
2.2
47
3000/Tape & Reel
MUN5136
SC–70/SOT–323
6N
100
100
3000/Tape & Reel
MUN5137
SC–70/SOT–323
6P
47
22
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
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MUN511 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector–Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCE(sat)
–
–
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
VOL
MUN5111
MUN5112
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5113
MUN5136
MUN5137
Vdc
Vdc
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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DEVICE CHARACTERISTICS
MUN511 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
MUN5130
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN5115
MUN5116
MUN5131
MUN5132
Input Resistor
Resistor Ratio
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136
MUN5114
MUN5115/MUN5116
MUN5130/MUN5131/MUN5132
MUN5133
MUN5134
MUN5135
MUN5137
Symbol
Min
Typ
Max
Unit
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
R1/R2
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
–50
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RθJA = 403°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
4
150
REV.02 20120403
DEVICE CHARACTERISTICS
MUN511 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111
TA=-25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
-25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
50
1
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
2
1
0
VCE = 10 V
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
100
100
25°C
75°C
TA=-25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 5. Output Current versus Input Voltage
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN511 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 8. DC Current Gain
100
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 9. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
-25°C
100
10
50
VCE = 10 V
TA=-25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 10. Output Current versus Input Voltage
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN511 Series
1
1000
IC/IB = 10
TA=-25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113
0
10
20
30
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
Figure 12. VCE(sat) versus IC
1
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
100
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA=75°C
-25°C
10
1
0.1
0.01
0.001
Figure 14. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
10
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN511 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114
TA=-25°C
25°C
0.1
75°C
0.01
0.001
25°C
140
-25°C
120
100
80
60
40
20
0
80
60
40
20
IC, COLLECTOR CURRENT (mA)
0
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
3.5
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
50
25°C
-25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
Figure 19. Output Capacitance
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
25°C
75°C
TA=-25°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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Figure 22. Inexpensive, Unregulated Current Source
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DEVICE CHARACTERISTICS
MUN511 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132
1000
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
75°C
0.1
25°C
–25°C
0.01
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
30
75°C
100
25°C
10
1
35
–25°C
0
20
Figure 23. Maximum Collector Voltage versus
Collector Current
100
IC, COLLECTOR CURRENT (mA)
9
8
7
6
5
4
3
2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
–25°C
10
25°C
1
0.1
0.01
0
0
1
2
3
4
5
6
7
8
–25°C
75°C
1
25°C
0
5
10
35 40
15
20 25 30
IC, OUTPUT CURRENT (mA)
45
50
Figure 27. Input Voltage versus Output Current
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Figure 26. Output Current versus Input Voltage
10
0.1
9
Vin, INPUT VOLTAGE (VOLTS)
Figure 25. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
120
Figure 24. DC Current Gain
10
1
0
40
60
80
100
IC, COLLECTOR CURRENT (mA)
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DEVICE CHARACTERISTICS
MUN511 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
–25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136
1000
75°C
TA = –25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
1.2
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
100
25°C
10
TA = –25°C
1
VO = 5 V
0.1
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
75°C
0
1
2
3
4
5
6
7
8
9
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
100
25°C
TA = –25°C
10
1
VO = 0.2 V
75°C
0
2
14
16
4
6
8
10 12
IC, COLLECTOR CURRENT (mA)
18
20
Figure 32. Input Voltage versus Output Current
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Vin, INPUT VOLTAGE (VOLTS)
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DEVICE CHARACTERISTICS
MUN511 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = –25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137
1000
75°C
TA = –25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage versus
Collector Current
Figure 34. DC Current Gain
100
1.4
Cob, CAPACITANCE (pF)
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
75°C
TA = –25°C
10
25°C
1
0.1
0.01
0.001
0
100
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
Figure 36. Output Current versus Input Voltage
Figure 35. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA = –25°C
10
75°C
25°C
1
0
20
5
10
15
IC, COLLECTOR CURRENT (mA)
25
Figure 37. Input Voltage versus Output Current
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Vin, INPUT VOLTAGE (VOLTS)
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PACKAGE OUTLINE & DIMENSIONS
MUN511 Series
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
1.00
0.80
0.032 0.040
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
K
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
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