KODENSHI K301 Photocoupler(these photocouplers consist of a gallium arsenide infrared emitting) Datasheet

Photocoupler
K301 • K302 • K304
These Photocouplers consist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Photo Darlington transistor per a channel.
The K301 has one channel in a 4-pin mini-flat SMD package.
The K302 has two channels in a 8-pin mini-flat SMD package.
The K304 has four channels in a 16-pin mini-flat SMD package.
FEATURES
• Mini-flat Package
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 600% (at IF=1mA, VCE=2V)
• Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
• Interface between two circuits of different potential
• Telephone Line Receiver
• Automatic Vending Machine
• Power Supply Regulators
DIMENSION
(Unit : mm)
K302
K301
3
1
2
7
6
1
2
3
5
4.4
4.4
Orientation Mark
0.5
8.7
0.5
5.2
0.2
0.4Min.
2.54
2.54
0.15
0.1
2.54
0.05
0.4Min.
0.1
7.0
0.2
0.2
2.5
2.5
0.15
0.2
5.2 0.2
0.05
0.2
0.1
4
Orientation Mark
7.0
3.6
0.4
8
0.2
0.2
4
0.25
K304
15
14
13
12
1
2
3
4
5
7.0
0.5
5.2
0.2
11
10
9
4.4
0.2
16
6
7
Orientation Mark
0.2
0.4Min.
2.54
0.15
0.1
2.54
0.05
0.1
2.5
0.2
18.8
1/3
8
Photocoupler
K301 • K302 • K304
MAXIMUM RATINGS
Parameter
Input
Symbol
Rating
(Ta=25℃ )
Unit
Forward Current
IF
50
mA
Reverse Voltage
VR
5
V
Peak Forward Current
Power Dissipation
*1
1
A
PD
70
mW
TJ
125
℃
Collector-Emitter Breakdown Voltage
BVCEO
30
V
Emitter-Collector Breakdown Voltage
BVECO
5
V
IC
50
mA
Junction Temperature
Output
IFP
Collector Current
PC
150
mW
Input to Output Isolation Voltage*2
Storage Temperature
Collector Power Dissipation
Viso
AC3750
Vrms
Tstg
-55~+125
℃
Operating Temperature
Topr
-30~+85
℃
Tsol
260
℃
Ptot
250
mW
Lead Soldering Temperature
Total Power Dissipation
*3
*1. Input current with 100µs pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage
Input
Output
Condition
Min.
Typ.
Max.
Unit.
-
1.15
1.30
V
VF
IF=10mA
Reverse Current
IR
VR=5V
-
-
10
㎂
Capacitance
CT
V=0, f=1KHz
-
30
-
pF
Collector-Emitter Breakdown Voltage
BVCEO
IC=0.5mA
30
-
-
V
Emitter-Collector Breakdown Voltage
BVECO
IE=0.1mA
5
-
-
V
Collector Dark Current
ICEO
IF=0, VCE=10V
-
-
100
nA
Capacitance
CCE
VCE=0, f=1KHz
-
10
-
pF
CTR
IF=1mA, VCE=2V
300
-
1500
%
VCE(SAT)
IF=1mA, IC=2mA
-
0.85
1.0
V
5
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
Coupled
(Ta=25℃ , unless otherwise noted)
Symbol
Input-Output Capacitance
CIO
V=0, f=1KHz
-
-
pF
Input-Output Isolation Resistance
RIO
RH=40~60%, V=500V
-
10
11
-
Ω
Rise Time
tr
VCE=10V, RL=100Ω
-
100
-
㎲
Fall Time
tf
IC=10mA
-
100
-
㎲
*4. CTR=(IC/IF) X 100 (%)
2/3
Photocoupler
K301 • K302 • K304
Collector Power Dissipation vs.
Ambient Temperature
Collector Power Dissipation P C (mW)
40
30
20
10
0
-20
0
20
40
60
80
250
100
200
80
150
100
50
Collector Current vs.
Collector-Emitter Voltage
40
30
I F =2.5mA
I F=2.0mA
20
P C (max.)
I F=1.5mA
10
40
60
4
6
10
40
0.1
VCE =10V
0.01
0.001
0
20
40
60
80
RL
VO
Test Circuit
Input
10
Output
10%
1
Load Resistance R L (㏀)
Ta=25℃
VCE =2V
25
20
15
10
2
90%
tr
Waveform
3/3
tf
0
1
2
3
4
5
Forward Current I F (mA)
VCC
R
tf
0.5
100
Switching Time Test Circuit
tr
0.2
1.6
Collector Current vs.
Forward Current
VIN
0.1
1.2
Dark Current vs.
Ambient Temperature
Ambient Temperature Ta (℃ )
VCE =10V
I C =10mA
Ta =25℃
10
0.05
0.8
5
8
100
Ta =-55℃
0.4
Forward Voltage VF (V)
1
Response Time vs.
Load Resistance
1000
20
Ambient Temperature Ta (℃ )
Collector-Emitter Voltage V CE (V)
5000
Ta=25℃
100
80
I F=1mA
2
Ta=70℃
40
30
I F=3.0mA
0
Response Time tr , t f (us)
20
I F =3.5mA
Dark Current I CEO (u A)
Collector Current I C (mA)
0
10
Ta=25℃
60
0
0
-20
100
Collector Current I C (mA)
Forward Current I F (mA)
50
Forward Current vs.
Forward Voltage
Forward Current I F (mA)
Forward Current vs.
Ambient Temperature
6
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