InGaAs PIN photodiodes G8423/G8373/G5853 series Long wavelength type (Cut-off wavelength: 2.55 to 2.6 m) Features Applications Cut-off wavelength: 2.55 to 2.6 m Gas analysis 3-pin TO-18 package: low price Spectrophotometer Thermoelectrically cooled TO-8 package: low dark current NIR (near infrared) photometry Active area: I0.3 to I3 mm Accessories (Optional) Preamp for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Speci¿cations / Absolute maximum ratings Type No. G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 Dimensional outline Package Cooling TO-18 TO-5 TO-8 One-stage TE-cooled TO-8 Two-stage TE-cooled Active area (mm) I0.3 I0.5 I1 I3 I0.3 I1 I3 I0.3 I1 I3 Non-cooled Thermistor power dissipation (mW) Absolute maximum ratings TE-cooler Reverse Operating allowable voltage temperature current VR Topr (A) (V) (°C) - - Storage temperature Tstg (°C) -40 to +85 -55 to +125 -40 to +70 -55 to +85 2 1.5 0.2 1.0 Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Condition Type No. G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 Element temperature Spectral response range O Peak sensitivity wavelength Op Photo sensitivity S O=Op (°C) (m) (m) Min. Typ. (A/W) (A/W) 25 1.2 to 2.6 -10 1.2 to 2.57 -20 1.2 to 2.55 2.3 0.9 1.3 Dark current ID VR=1 V Typ. (A) 2 5 15 150 0.2 1.5 15 0.1 0.8 7.5 Max. (A) 20 50 75 1500 2 7.5 150 1 4 75 Cut-off frequency fc VR=1 V RL=50 : -3 dB (MHz) 60 50 15 1.5 60 15 1.5 60 15 1.5 Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV (pF) 40 60 200 1800 40 200 1800 40 200 1800 (k:) 30 15 3 0.3 300 30 3 600 60 6 D O=Op NEP O=Op (cm·Hz1/2/W) (W/Hz1/2) 7 × 10-13 1 × 10-12 2 × 10-12 8 × 10-12 3 × 10-13 7 × 10-13 2 × 10-12 2 × 10-13 5 × 10-13 1.8 × 10-12 5 × 1010 1 × 1011 2 × 1011 The G8423/G8373/G5853 series may be damaged by electrostatic discharge, etc. Be carefull when using the G8423/G8373/G5853 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G8423/G8373/G5853 series Spectral response Photo sensitivity temperature characteristic (Typ.) 1.4 (Typ.) 2 Temperature coefficient (%/°C) Photo sensitivity (A/W) 1.2 1.0 0.8 T=-20 °C 0.6 T=-10 °C 0.4 0.2 1 0 T=25 °C 0 0.8 1.0 1.2 1.4 1.6 -1 0.8 1.0 1.2 1.8 2.0 2.2 2.4 2.6 2.8 Wavelength (μm) 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Wavelength (μm) KIRDB0216EB KIRDB0206EA Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 °C) 1 mA G8373-03 G5853-13 (T=-10 °C) 100 μA 10 μA G8373-01 Dark current Dark current (Typ.) 100 μA G8423-05 10 μA 1 μA G5853-23 (T=-20 °C) 1 μA G5853-11 (T=-10 °C) G5853-21 (T=-20 °C) 100 nA G8423-03 G5853-103 (T=-10 °C) G5853-203 (T=-20 °C) 100 nA 0.01 0.1 1 10 Reverse voltage (V) 10 nA 0.01 0.1 1 10 Reverse voltage (V) KIRDB0238EA KIRDB0218EA 2 InGaAs PIN photodiodes G8423/G8373/G5853 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF (Typ. VR=10 mV) 1 MΩ G8423-03 G5853-103/-203 G8373-03 G5853-13/-23 100 kΩ 1 nF Shunt resistance Terminal capacitance G8423-05 G8373-01 G5853-11/-21 G8423-05 100 pF G8373-01 G5853-11/-21 10 kΩ 1 kΩ 100 Ω G8373-03 G5853-13/-23 G8423-03 G5853-103/-203 10 pF 0.1 1 10 Ω -40 10 -20 Reverse voltage (V) 0 20 40 60 80 90 Element temperature (°C) KIRDB0239EA KIRDB0240EA Thermistor temperature characteristic 105 104 -30 -20 -10 0 10 20 30 Element temperature (°C) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) Resistance (Ω) Cooling characteristics of TE-cooler (Typ.) 106 103 -40 100 20 One-stage TE-cooled type 0 -20 Two-stage TE-cooled type -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) KIRDB0116EA KIRDB0231EA 3 InGaAs PIN photodiodes G8423/G8373/G5853 series Current vs. voltage (TE-cooler) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage TE-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) G8423-03/-05, G8373-01 G8373-03 9.2 ± 0.2 5.4 ± 0.2 0.45 lead 4.2 ± 0.2 0.45 lead 2.5 ± 0.2 13 Min. Photosensitive surface 18 Min. 0.15 Max. 3.6 ± 0.2 A Photosensitive surface Window 5.9 ± 0.1 0.4 Max. 8.1 ± 0.1 4.7 ± 0.1 Window 3.0 ± 0.1 5.1 ± 0.3 2.5 ± 0.2 1.5 Max. G8423-03/-05 G8373-01 A 2.6 ± 0.2 Case 2.7 ± 0.2 Case KIRDA0205EA KIRDA0151EA 4 InGaAs PIN photodiodes G8423/G8373/G5853 series G5853-103/-11/-13 G5853-203/-21/-23 15.3 ± 0.2 15.3 ± 0.2 A Photosensitive surface 12 Min. 0.45 lead 0.45 lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Window 10 ± 0.2 12 Min. Photosensitive surface 6.4 ± 0.2 A Window 10 ± 0.2 10 ± 0.2 14 ± 0.2 14 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor G5853-103 G5853-11/-13 A 4.3 ± 0.2 4.4 ± 0.2 KIRDA0206EA Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor G5853-203 G5853-21/-23 A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0207EA Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1048E07 Jun. 2011 DN 5