QFN Package INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SC70 Package www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series CURRENT SHUNT MONITOR Check for Samples: INA199A1, INA199B1, INA199A2, INA199B2, INA199A3, INA199B3 FEATURES DESCRIPTION • • The INA199 series of voltage output current shunt monitors can sense drops across shunts at commonmode voltages from –0.3V to 26V, independent of the supply voltage. Three fixed gains are available: 50V/V, 100V/V, and 200V/V. The low offset of the Zerø-Drift architecture enables current sensing with maximum drops across the shunt as low as 10mV full-scale. 1 2 • • • • WIDE COMMON-MODE RANGE: –0.3V to 26V OFFSET VOLTAGE: ±150μV (Max) (Enables shunt drops of 10mV full-scale) ACCURACY – ±1.5% Gain Error (Max over temperature) – 0.5μV/°C Offset Drift (Max) – 10ppm/°C Gain Drift (Max) CHOICE OF GAINS: – INA199A1/B1: 50V/V – INA199A2/B2: 100V/V – INA199A3/B3: 200V/V QUIESCENT CURRENT: 100μA (max) PACKAGES: SC70, THIN QFN-10 These devices operate from a single +2.7V to +26V power supply, drawing a maximum of 100μA of supply current. All versions are specified from –40°C to +105°C, and offered in both SC70 and thin QFN10 packages. PRODUCT FAMILY TABLE PRODUCT APPLICATIONS • • • • • • NOTEBOOK COMPUTERS CELL PHONES TELECOM EQUIPMENT POWER MANAGEMENT BATTERY CHARGERS WELDING EQUIPMENT R3 AND R4 R1 AND R2 INA199A1/B1 50 20kΩ 1MΩ INA199A2/B2 100 10kΩ 1MΩ INA199A3/B3 200 5kΩ 1MΩ RSHUNT Supply Reference Voltage OUT REF GND +2.7V to +26V GAIN R1 R3 R2 R4 Load Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2012, Texas Instruments Incorporated INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE INFORMATION (1) PRODUCT GAIN INA199A1 (1) 50V/V INA199B1 50V/V INA199A2 100V/V INA199B2 100V/V INA199A3 200V/V INA199B3 200V/V PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING SC70-6 DCK OBG Thin QFN-10 RSW NSJ SC70-6 DCK SEB Thin QFN-10 RSW SHV OBH SC70-6 DCK Thin QFN-10 RSW NTJ SC70-6 DCK SEG Thin QFN-10 RSW SHW SC70-6 DCK OBI Thin QFN-10 RSW NUJ SC70-6 DCK SHE Thin QFN-10 RSW SHX For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. Supply Voltage Analog Inputs, VIN+, VIN– (2) Differential (VIN+) – (VIN–) Common-mode (3) VALUE UNIT +26 V –26 to +26 V GND – 0.3 to +26 V REF Input GND – 0.3 to (V+) + 0.3 V Output (3) GND – 0.3 to (V+) + 0.3 V Input Current Into All Pins (3) 5 mA Operating Temperature –40 to +125 °C Storage Temperature –65 to +150 °C Junction Temperature +150 °C Human Body Model (HBM) 4000 V Charged-Device Model (CDM) 1000 V Machine Model (MM) 200 V Human Body Model (HBM) 1500 V Charged-Device Model (CDM) 1000 V Machine Model (MM) 100 V ESD Ratings: (version A) ESD Ratings: (version B) (1) (2) (3) 2 Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = –40°C to +105°C. At TA = +25°C, VS = +5V, VIN+ = 12V, VSENSE = VIN+ – VIN–, and VREF = VS/2, unless otherwise noted. INA199A1, INA199B1, INA199A2, INA199B2, INA199A3, INA199B3 PARAMETER CONDITIONS MIN Version A Version B CMR VIN+ = 0V to +26V, VSENSE = 0mV 100 VOS VSENSE = 0mV TYP MAX UNIT –0.3 26 V –0.1 26 INPUT Common-Mode Input Range Common-Mode Rejection Offset Voltage, RTI (1) VCM vs Temperature dVOS/dT vs Power Supply PSR VS = +2.7V to +18V, VIN+ = +18V, VSENSE = 0mV 120 V dB ±5 ±150 μV 0.1 0.5 μV/°C ±0.1 μV/V IB VSENSE = 0mV 28 μA IOS VSENSE = 0mV ±0.02 μA INA199A1 50 V/V INA199A2 100 V/V INA199A3 200 V/V Input Bias Current Input Offset Current OUTPUT Gain G Gain Error VSENSE = –5mV to 5mV vs Temperature ±0.03 ±1.5 % 3 10 ppm/°C Nonlinearity Error VSENSE = –5mV to 5mV ±0.01 % Maximum Capacitive Load No Sustained Oscillation 1 nF VOLTAGE OUTPUT (2) RL = 10kΩ to GND Swing to V+ Power-Supply Rail Swing to GND (V+) – 0.05 (V+) – 0.2 V (VGND) + 0.005 (VGND) + 0.05 V FREQUENCY RESPONSE Bandwidth Slew Rate GBW CLOAD = 10pF, INA199A1 and INA199B1 80 kHz CLOAD = 10pF, INA199A2 and INA199B2 30 kHz CLOAD = 10pF, INA199A3 and INA199B3 14 kHz 0.4 V/μs 25 nV/√Hz SR NOISE, RTI (1) Voltage Noise Density POWER SUPPLY Operating Voltage Range VS –20°C to +85°C Quiescent Current IQ +2.7 +26 +2.5 +26 V 100 μA 115 μA VSENSE = 0mV 65 Over Temperature V TEMPERATURE RANGE Specified Range –40 +105 °C Operating Range –40 +125 °C Thermal Resistance (1) (2) θ JA SC70 250 °C/W Thin QFN 80 °C/W RTI = Referred-to-input. See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 6). Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com PIN CONFIGURATIONS DCK PACKAGE SC70-6 (TOP VIEW) REF 1 6 OUT GND 2 5 IN- V+ 3 4 IN+ RSW PACKAGE Thin QFN-10 (TOP VIEW) NC REF 8 GND 9 OUT 10 7 4 V+ 6 1 NC (1) (1) (1) 2 5 IN- 4 IN- 3 IN+ IN+ NC = no connection. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 TYPICAL CHARACTERISTICS Performance measured with the INA199A3 at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. COMMON-MODE REJECTION RATIO vs TEMPERATURE 20 1.0 15 0.8 0.6 10 CMRR (mV/V) Offset Voltage (mV) OFFSET VOLTAGE vs TEMPERATURE 5 0 -5 0.4 0.2 0 -0.2 -0.4 -10 -0.6 -15 -0.8 -20 -50 0 -25 25 50 75 100 -1.0 -50 125 0 -25 25 100 125 Figure 2. GAIN vs FREQUENCY POWER-SUPPLY REJECTION RATIO vs FREQUENCY 160 60 140 G = 200 120 |PSRR| (dB) 50 Gain (dB) 75 Figure 1. 70 40 30 G = 50 G = 100 20 100 80 60 VS = +5V + 250mV Sine Disturbance VCM = 0V VDIF = Shorted VREF = 2.5V 40 10 VCM = 0V VDIF = 15mVPP Sine 0 20 0 -10 10 160 100 1k 10k 100k 1M 1 10M COMMON-MODE REJECTION RATIO vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT Output Voltage Swing (V) 60 VS = +5V VCM = 1V Sine VDIF = Shorted VREF = 2.5V 1 10k Figure 4. 80 0 1k Figure 3. 100 20 100 Frequency (Hz) 120 40 10 Frequency (Hz) 140 |CMRR| (dB) 50 Temperature (°C) Temperature (°C) 10 100 1k 10k Frequency (Hz) Figure 5. Copyright © 2009–2012, Texas Instruments Incorporated 100k 1M V+ (V+) - 0.5 (V+) - 1.0 (V+) - 1.5 (V+) - 2.0 (V+) - 2.5 (V+) - 3.0 100k VS = 5V to 26V VS = 2.7V to 26V VS = 2.7V GND + 3.0 GND + 2.5 GND + 2.0 GND + 1.5 GND + 1.0 GND + 0.5 GND TA = -40°C TA = +25°C TA = +105°C VS = 2.7V to 26V 0 5 10 15 20 25 30 35 40 Output Current (mA) Figure 6. Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 5 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) OUTPUT VOLTAGE SWING vs OUTPUT CURRENT (VS = 2.5V) V+ (V+) - 0.25 (V+) - 0.50 (V+) - 0.75 (V+) - 1.00 (V+) - 1.25 (V+) - 1.50 INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = +5V 50 +25°C 40 -20°C Input Bias Current (mA) Output Voltage (V) Performance measured with the INA199A3 at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. +85°C GND + 1.50 GND + 1.25 GND + 1.00 GND + 0.75 GND + 0.50 GND + 0.25 GND +85°C +25°C IB+, IB-, VREF = 0V 30 20 IB+, IB-, VREF = 2.5V 10 0 -20°C -10 0 2 4 5 8 10 12 14 0 18 16 5 10 15 20 25 30 Common-Mode Voltage (V) Output Current (mA) Figure 7. Figure 8. INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = 0V (Shutdown) INPUT BIAS CURRENT vs TEMPERATURE 30 30 IB+, IB-, VREF = 0V and IB-, VREF = 2.5V 20 Input Bias Current (mA) Input Bias Current (mA) 25 15 10 5 IB+, VREF = 2.5V 29 28 27 26 0 25 -50 -5 0 5 10 15 20 25 30 75 100 QUIESCENT CURRENT vs TEMPERATURE INPUT-REFERRED VOLTAGE NOISE vs FREQUENCY Input-Referred Voltage Noise (nV/ÖHz) Quiescent Current (mA) 50 Figure 10. 66 64 62 6 25 Figure 9. 68 0 25 50 75 100 125 G = 50 G = 200 G = 100 10 VS = ±2.5V VREF = 0V VIN-, VIN+ = 0V 10 100 1k Temperature (°C) Frequency (Hz) Figure 11. Figure 12. Submit Documentation Feedback 125 100 1 -25 0 Temperature (°C) 70 60 -50 -25 Common-Mode Voltage (V) 10k 100k Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 TYPICAL CHARACTERISTICS (continued) Performance measured with the INA199A3 at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. STEP RESPONSE (10mVPP Input Step) 2VPP Output Signal 10mVPP Input Signal Input Voltage (5mV/diV) Referred-to-Input Voltage Noise (200nV/div) Output Voltage (0.5V/diV) 0.1Hz to 10Hz VOLTAGE NOISE (Referred-to-Input) VS = ±2.5V VCM = 0V VDIF = 0V VREF = 0V Time (1s/div) Time (100ms/div) Figure 13. Figure 14. COMMON-MODE VOLTAGE TRANSIENT RESPONSE INVERTING DIFFERENTIAL INPUT OVERLOAD Output Voltage 0V 2V/div 0V Output Voltage (40mV/div) Common-Mode Voltage (1V/div) Inverting Input Overload Common Voltage Step Output 0V VS = 5V, VCM = 12V, VREF = 2.5V Time (50ms/div) Time (250ms/div) Figure 15. Figure 16. NONINVERTING DIFFERENTIAL INPUT OVERLOAD START-UP RESPONSE Supply Voltage 1V/div 2V/div Noninverting Input Overload Output 0V VS = 5V, VCM = 12V, VREF = 2.5V Time (250ms/div) Figure 17. Copyright © 2009–2012, Texas Instruments Incorporated Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Figure 18. Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 7 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) Performance measured with the INA199A3 at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. BROWNOUT RECOVERY 1V/div Supply Voltage Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Figure 19. 8 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 APPLICATION INFORMATION BASIC CONNECTIONS Figure 20 shows the basic connections for the INA199. The input pins, IN+ and IN–, should be connected as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance. OUT REF GND +2.7V to +26V RSHUNT Supply Reference Voltage R1 R3 R2 R4 Load Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 20. Typical Application Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors close to the device pins. On the RSW package, two pins are provided for each input. These pins should be tied together (that is, tie IN+ to IN+ and tie IN– to IN–). POWER SUPPLY The input circuitry of the INA199 can accurately measure beyond its power-supply voltage, V+. For example, the V+ power supply can be 5V, whereas the load power-supply voltage can be as high as +26V. However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the INA199 can withstand the full –0.3V to +26V range in the input pins, regardless of whether the device has power applied or not. SELECTING RS The zero-drift offset performance of the INA199 offers several benefits. Most often, the primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current shunt monitors typically require a full-scale range of 100mV. The INA199 series of current-shunt monitors give equivalent accuracy at a full-scale range on the order of 10mV. This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits. Alternatively, there are applications that must measure current over a wide dynamic range that can take advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower gain of 50 or 100 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA199A1 operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 150μV of offset. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 9 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com UNIDIRECTIONAL OPERATION Unidirectional operation allows the INA199 to measure currents through a resistive shunt in one direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin to a convenient value above 50mV to get the device output swing into the linear range for zero inputs. A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to negative currents (inverted voltage polarity at the device input). BIDIRECTIONAL OPERATION Bidirectional operation allows the INA199 to measure currents through a resistive shunt in two directions. In this case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between 0V to V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a voltage other than half-scale when the bidirectional current is nonsymmetrical. The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input conditions the output assumes the same voltage that is applied to the reference input. INPUT FILTERING An obvious and straightforward filtering location is at the device output. However, this location negates the advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances. Figure 21 shows a filter placed at the inputs pins. V+ VCM RS < 10W RINT VOUT RSHUNT CF Bias RS < 10W VREF RINT Load Figure 21. Filter at Input Pins The addition of external series resistance, however, creates an additional error in the measurement so the value of these series resistors should be kept to 10Ω or less if possible to reduce impact to accuracy. The internal bias network shown in Figure 21 present at the input pins creates a mismatch in input bias currents when a differential voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This error results in a voltage at the device input pins that is different than the voltage developed across the shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device operation. The amount of error these external filter resistor add to the measurement can be calculated using Equation 2 where the gain error factor is calculated using Equation 1. 10 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 The amount of variance in the differential voltage present at the device input relative to the voltage developed at the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3 and R4 (or RINT as shown in Figure 21). The reduction of the shunt voltage reaching the device input pins appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to determine the amount of gain error that is introduced by the addition of external series resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the device input pins is given in Equation 1: (1250 ´ RINT) Gain Error Factor = (1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) where: RINT is the internal input resistor (R3 and R4), and RS is the external series resistance. (1) With the adjustment factor equation including the device internal input resistance, this factor varies with each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2. Table 1. Input Resistance PRODUCT GAIN RINT (kΩ) INA199A1 50 20 INA199B1 50 20 INA199A2 100 10 INA199B2 100 10 INA199A3 200 5 INA199B3 200 5 Table 2. Device Gain Error Factor PRODUCT SIMPLIFIED GAIN ERROR FACTOR 20,000 INA199A1 (17 ´ RS) + 20,000 20,000 INA199B1 (17 ´ RS) + 20,000 10,000 INA199A2 (9 ´ RS) + 10,000 10,000 INA199B2 (9 ´ RS) + 10,000 INA199A3 1000 RS + 1000 INA199B3 1000 RS + 1000 The gain error that can be expected from the addition of the external series resistors can then be calculated based on Equation 2: Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2) For example, using an INA199A2 or INA199B2 and the corresponding gain error equation from Table 2, a series resistance of 10Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 2, resulting in a gain error of approximately 0.89% solely because of the external 10Ω series resistors. Using an INA199A1 or INA199B1 with the same 10Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again solely because of these external resistors. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 11 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com SHUTTING DOWN THE INA199 SERIES While the INA199 series does not have a shutdown pin, the low power consumption allows powering from the output of a logic gate or transistor switch that can turn on and turn off the INA199 power-supply quiescent current. However, in current shunt monitoring applications. there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified schematic of the INA199 in shutdown mode shown in Figure 22. RSHUNT Supply Reference Voltage OUT REF GND Shutdown Control 1MW R3 1MW R4 Load Output IN- IN+ V+ CBYPASS PRODUCT R3 AND R4 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 20kW 10kW 5kW NOTE: 1MΩ paths from shunt inputs to reference and INA199 outputs. Figure 22. Basic Circuit for Shutting Down INA199 with Grounded Reference Note that there is typically slightly more than 1MΩ impedance (from the combination of 1MΩ feedback and 5kΩ input resistors) from each input of the INA199 to the OUT pin and to the REF pin. The amount of current flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the calculation of the effect of the 1MΩ impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered while the INA199 is shut down, the calculation is direct; instead of assuming 1MΩ to ground, however, assume 1MΩ to the reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no current flows through the 1MΩ path. Regarding the 1MΩ path to the output pin, the output stage of a disabled INA199 does constitute a good path to ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed across a 1MΩ resistor. As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25μA that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V commonmode, the only current effects are the result of the 1MΩ resistors. 12 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 REF INPUT IMPEDANCE EFFECTS As with any difference amplifier, the INA199 series common-mode rejection ratio is affected by any impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to most references or power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin should be buffered by an op amp. In systems where the INA199 output can be sensed differentially, such as by a differential input analog-to-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can be cancelled. Figure 23 depicts a method of taking the output from the INA199 by using the REF pin as a reference. RSHUNT Supply Load ADC OUT REF GND +2.7V to +26V R1 R3 R2 R4 Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 23. Sensing INA199 to Cancel Effects of Impedance on the REF Input Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 13 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com USING THE INA199 WITH COMMON-MODE TRANSIENTS ABOVE 26V With a small amount of additional circuitry, the INA199 series can be used in circuits subject to transients higher than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes referred to as Transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as shown in Figure 24 as a working impedance for the zener. It is desirable to keep these resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on gain that is discussed in the section on input filtering. Because this circuit limits only short-term transients, many applications are satisfied with a 10Ω resistor along with conventional zener diodes of the lowest power rating that can be found. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage OUT REF GND 1MW R3 1MW R4 V+ Shutdown Control Output IN- IN+ CBYPASS Figure 24. INA199 Transient Protection Using Dual Zener Diodes 14 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 In the event that low-power zeners do not have sufficient transient absorption capability and a higher power transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. This method is shown in Figure 25. The most space-efficient solutions are dual series-connected diodes in a single SOT-523 or SOD-523 package. In both examples shown in Figure 24 and Figure 25, the total board area required by the INA199 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an MSOP-8 package. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage OUT REF GND 1MW R3 1MW R4 V+ Shutdown Control Output IN- IN+ CBYPASS Figure 25. INA199 Transient Protection Using a Single Transzorb and Input Clamps Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 15 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 www.ti.com IMPROVING TRANSIENT ROBUSTNESS Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the device input pins may cause damage to the internal ESD structures on version A devices. This potential damage is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With significant current available in most current-sensing applications, the large current flowing through the input transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be taken to ensure that external series input resistance does not significantly impact gain error accuracy. For accuracy purposes, these resistances should be kept under 10Ω if possible. Ferrite beads are recommended for this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ω of resistance at dc and over 600Ω of resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection scheme is shown in Figure 26. Shunt Reference Voltage Load Supply Device OUT REF 1MW R3 GND IN- - + MMZ1608B601C IN+ V+ +2.7V to +26V 0.01mF to 0.1mF Output 1MW R4 0.01mF to 0.1mF Figure 26. Transient Protection To minimize the cost of adding these external components to protect the device in applications where large transient signals may be present, version B devices are now available with new ESD structures that are not susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing latched conditions so they do not have the same sensitivity to the transients that the version A devices have, thus making the version B devices a better fit for these applications. 16 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 INA199A1, INA199B1 INA199A2, INA199B2 INA199A3, INA199B3 www.ti.com SBOS469D – MAY 2009 – REVISED NOVEMBER 2012 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (August 2012) to Revision D Page • Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................. 3 • Updated Figure 21 .............................................................................................................................................................. 10 • Updated Figure 22 .............................................................................................................................................................. 12 Changes from Revision B (February 2010) to Revision C Page • Added INA199Bx gains to fourth Features bullet ................................................................................................................. 1 • Added INA199Bx data to Product Family Table ................................................................................................................... 1 • Added INA199Bx data to Package Information table ........................................................................................................... 2 • Added silicon version B ESD ratings data to Absolute Maximum Ratings table .................................................................. 2 • Added silicon version B data to Input, Common-Mode Input Range parameter of Electrical Characteristics table ............. 3 • Added QFN package information to Temperature Range section of Electrical Characteristics table .................................. 3 • Updated Figure 3 .................................................................................................................................................................. 5 • Updated Figure 9 .................................................................................................................................................................. 6 • Updated Figure 12 ................................................................................................................................................................ 6 • Changed last paragraph of the Selecting RS section to cover both INA199Ax and INA199Bx versions ............................. 9 • Changed Input Filtering section .......................................................................................................................................... 10 • Added Improving Transient Robustness section ................................................................................................................ 16 Changes from Revision A (June 2009) to Revision B Page • Deleted ordering information content from Package/Ordering table .................................................................................... 2 • Updated DCK pinout drawing ............................................................................................................................................... 4 Changes from Original (May 2009) to Revision A • Page Added ordering number and transport media, quantity columns to Package/Ordering Information table ............................ 2 Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA199A1 INA199B1 INA199A2 INA199B2 INA199A3 INA199B3 17 PACKAGE OPTION ADDENDUM www.ti.com 12-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) INA199A1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBG INA199A1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBG INA199A1RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ INA199A1RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ INA199A2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBH INA199A2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBH INA199A2RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NTJ INA199A2RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NTJ INA199A3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBI INA199A3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 OBI INA199A3RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NUJ INA199A3RSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 NUJ INA199B1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEB INA199B1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEB INA199B1RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHV INA199B1RSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHV INA199B2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEG Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 12-Sep-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) INA199B2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEG INA199B2RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHW INA199B2RSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHW INA199B3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SHE INA199B3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SHE INA199B3RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHX INA199B3RSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHX (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 12-Sep-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 3 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA199A1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A1DCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA199A1DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A1DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A1RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A2DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A2DCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA199A2DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A2RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A2RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A3DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199A3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA199A3DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA199A3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199A3RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B2RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA199B3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA199B3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA199A1DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A1DCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA199A1DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A1DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A1DCKT SC70 DCK 6 250 180.0 180.0 18.0 Pack Materials-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA199A1RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A1RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199A2DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A2DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A2DCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA199A2DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199A2DCKT SC70 DCK 6 250 202.0 201.0 28.0 INA199A2DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A2RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A2RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199A3DCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA199A3DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199A3DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199A3DCKT SC70 DCK 6 250 195.0 200.0 45.0 INA199A3RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199A3RSWT UQFN RSW 10 250 203.0 203.0 35.0 INA199B1DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B1DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B1RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199B2DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B2DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B2RSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA199B3DCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA199B3DCKT SC70 DCK 6 250 180.0 180.0 18.0 INA199B3RSWR UQFN RSW 10 3000 203.0 203.0 35.0 Pack Materials-Page 3 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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