ASI MRF377 Npn silicon rf power transistor Datasheet

MRF377
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF377 is Designed for
broadband commercial and industrial
applications in 470 to 860 MHz band.
Ideal for large-signal, common source
amplifier in 32 V digital television
transmitter equipment.
PACKAGE STYLE .400 BAL FLG. (C)
FEATURES:
• PG = 16.5 dB min. at 45 W/860 MHz
• η = 21 % Minimum
• Omnigold™ Metalization System
.080x45°
A
B
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
FULL R
E
M
C
H
I
J K
VDSS
65 V
VGS
15 V
PDISS
486 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.36 °C/W
SYMBOL
N
L
17.0 A
CHARACTERISTICS
G
.130 / 3.30
D
.380 / 9.65
.390 / 9.91
E
.780 / 19.81
.820 / 20.83
.435 / 11.05
1.090 / 27.69
G
F
ID
.120 / 3.05
C
F
.1925
MAXIMUM RATINGS
.210 / 5.33
B
(4X).060 R
D
MAXIMUM
DIM
H
1.335 / 33.91
I
.003 / 0.08
J
.060 / 1.52
1.345 / 34.16
.070 / 1.78
K
.082 / 2.08
.100 / 2.54
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
.007 / 0.18
.205 / 5.21
L
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
VDSS
ID = 10 µA
IDSS
VDS = 32 V
1.0
µA
IGSS
VGS = 5 V
1.0
µA
VGS(th)
VDS = 10 V
ID = 200 µA
2.8
V
VGS(Q)
VDS = 32 V
ID = 225 mA
3.5
V
VDS(ON)
ID = 3.0 A
f = 1.0 MHz
0.27
V
CRSS
VGS = 10 V
VDS = 28 V
3.2
pF
PG
VDD = 32 V
IDQ = 2 x 1000 mA
16.5
18.2
dB
21
22.9
%
η
f = 860 MHz
65
POUT = 45 W
V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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