DF005S2 - DF10S2 Bridge Rectifier Features Description • Maximum Surge Rating: IFSM = 85 A I2t = 30 A2Sec • Optimized VF: Typical 0.93 V at 2 A, 25°C • DF10S Socket Compatible • Glass Passivated Junctions • Space Saving • Lead Free in Comply with EU RoHS 2002/95/EU Directives • Green Molding Compound: IEC61249 Halogen Free • Qualified with IR Reflow and Wave Soldering With the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the DFxS2 family sets a new standard in performance. The new design offers an improved surge rating of 85 A. This is especially important when striving to improve reliability and increase efficiency. High efficiency designs strive to reduce circuit resistance, which, unfortunately can result in increased inrush surge. As such higher surge current ratings can be required to maintain or improve reliability. The design also offers improved efficiency by achieving a 2 A VF of 1.1 V maximum at 25°C. This lower VF also supports cooler and more efficient operation. ~ Finally, the DFxS2 achieves all this in a SDIP surface mount form factor, reducing board space and volumetric requirements vs. competitive devices. + IN OUT ~ - SDIP Ordering Information Part Number Top Mark Package Packing Method DF005S2 DF005S2 SDIP 4L Tape and Reel DF01S2 DF01S2 SDIP 4L Tape and Reel DF02S2 DF02S2 SDIP 4L Tape and Reel DF04S2 DF04S2 SDIP 4L Tape and Reel DF06S2 DF06S2 SDIP 4L Tape and Reel DF08S2 DF08S2 SDIP 4L Tape and Reel DF10S2 DF10S2 SDIP 4L Tape and Reel © 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.0.1 www.fairchildsemi.com DF005S2 - DF10S2 — Bridge Rectifier October 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value DF005S2 DF01S2 DF02S2 DF04S2 DF06S2 DF08S2 DF10S2 Unit VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V IF(AV) Maximum Average Forward Current TA = 40°C 2.0 A IFSM Peak Forward Surge Current 8.3 ms Single Half-Sine Wave Superimposed on Rated Load(JEDEC Method) 85 A TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature Range -55 to +150 °C Thermal Characteristics(1) Symbol RθJA ψJL Parameter Conditions Max. Single-Die Measurement (Maximum Land Pattern: 13 x 13 mm) 60 Multi-Die Measurement (Maximum Land Pattern: 13 x 13 mm) 50 Multi-Die Measurement (Minimum Land Pattern: 1.3 x 1.5 mm) 100 Thermal Characterization Single-Die Measurement Parameter, Junction to Lead (Maximum and Minimum Land Pattern) 25 Thermal Resistance, Junction to Ambient Unit °C/W °C/W Note: 1. The thermal resistances (RθJA & ψJL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Heating effect from adjacent dice is considered and only two dices are powered at the same time. F S S F F S S F Figure 2. Minimum Pads of 2 oz Copper Figure 1. Maximum Pads of 2 oz Copper © 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.0.1 www.fairchildsemi.com 2 DF005S2 - DF10S2 — Bridge Rectifier Absolute Maximum Ratings Values are at TA = 25°C unless otherwise noted. Symbol VF Parameter Conditions Min. Typ. Forward Voltage Drop per Bridge Element IF = 2.0 A IR DC Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3 ms) CJ Junction Capacitance © 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.0.1 Max. Unit 1.1 V TJ = 25°C 3 TJ = 125°C 500 30 VR = 4.0 V, f = 1.0 MHz 23 μA A2S pF www.fairchildsemi.com 3 DF005S2 - DF10S2 — Bridge Rectifier Electrical Characteristics 100 Reverse Current, IR[μA] Forward Current, IF[A] 10 1 o TJ=150 C o 0.1 TJ=25 C o TJ=125 C 10 o o TJ=125 C TJ=150 C 1 o TJ=25 C 0.1 0.01 o TJ= -55 C 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 o TJ=-55 C 1.1 1E-3 200 1.2 400 Forward Voltage Drop, VF[V] Figure 3. Typical Instantaneous Forward Characteristics 1000 100 IFSM, Peak Forward Surge Current [A] Average Current [DC] 800 Figure 4. Typical Reverse Characteristics 2.0 1.5 Max Pad (Sigle die) 1.0 0.5 0.0 40 600 Reverse Voltage, VR[V] 60 80 100 120 140 160 180 90 80 70 60 50 40 30 20 10 0 200 o 0 20 40 60 80 100 Number of Cycles at 60 Hz Ambient Temperature [ C] Figure 5. Maximum Average Current vs. Ambient Temperature Figure 6. Peak Forward Surge Current vs. Number of Cycles at 60Hz 40 f = 1 MHz Juntion Capacitance, CJ[pF] 35 30 25 20 15 10 5 0 0 10 20 30 40 50 Reverse Voltage, VR[V] Figure 7. Typical Junction Capacitance © 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.0.1 www.fairchildsemi.com 4 DF005S2 - DF10S2 — Bridge Rectifier Typical Performance Characteristics DF005S2 - DF10S2 — Bridge Rectifier Physical Dimensions 5.200 5.000 4 1.30 3 PIN1 ID OPTIONAL 1.50 6.500 6.200 1 10.300 9.400 10.40 2 1.200 0.890 5.10 TOP VIEW LAND PATTERN RECOMMENDATION 8.510 8.050 CHAMFER OPTIONAL 7.874 7.370 2.60 2.20 0.330 0.220 1.530 1.020 1.12 SIDE VIEW 1.000 0.028 END VIEW NOTES: A. THIS PACKAGE DOES NOT CONFORM TO ANY REFERENCE STANDARD. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. G. DRAWING FILE NAME: MKT-SDIP04AREV4. Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE © 2014 Fairchild Semiconductor Corporation DF005S2 - DF10S2 Rev. 1.0.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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