Powerex Power CM75MX-12A Nx-series cib module 75 amperes/600 volt Datasheet

CM75MX-12A
NX-Series CIB Module
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
AJ
AK
AG
A
K
E
AH
F
G
J
L
K
M
K
M
K
K
AA
AB
C
K
L
K
K
K
DETAIL "A"
Z
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
X
W
54
Y
30
K
55
29
K28
V
56
57
V
59
60
S
R
26
K
K
61
Q
27
L
58 K
B
P
25
24
23
DETAIL "B"
1
2
3
4
5
6
7
8
M
AN
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Y
K
T
L
K
K
L
L
K
L
K
L
K
AF
X
AC
AP
AM
N (4 PLACES)
U
H
AD
AL
AE
D
DETAIL "A"
P(52-53)
DETAIL "B"
ClampDi
B(24-25)
R
S
T
(1-2) (5-6) (9-10)
FWDi
GUP(49)
ESUP(48)
GVP(44)
ESVP(43)
GWP(39)
ESWP(38)
U(13-14)
V(17-18)
W(21-22)
GUN(34)
GVN(33)
GWN(32)
GB(35)
ConvDi
N(57-58)
TH1
(28)
TH2
(29)
P1(54-55)
N1(60-61)
ES(31)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
4.79
2.44
0.51
4.49
4.33±0.02
3.89
3.72
0.16
0.51
0.15
0.45
0.6
0.22 Dia.
2.13
1.53
1.97±0.02
2.26
0.30
0.59
121.7
62.0
13.0
114.05
110.0±0.5
99.0
94.5
4.06
13.09
3.81
11.43
15.24
5.5 Dia.
54.2
39.0
50.0±0.5
57.5
7.75
15.0
V
W
X
Y
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
Rev. 11/11
Inches
0.3
0.46
0.16
0.08 Dia.
0.27
0.81
0.67
0.12
0.14
0.03
0.15
0.05
0.025
0.29
0.047
0.49
0.06
0.17 Dia.
0.10 Dia.
Millimeters
7.62
11.66
4.2
2.1 Dia.
7.0
20.5
17.0
3.0
3.5
0.8
3.75
1.15
0.65
7.4
1.2
12.5
1.5
4.3 Dia.
2.5 Dia.
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter section, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sensing the baseplate temperature. 5th
Generation CSTBT chips yield low
loss.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75MX-12A is a 600V (VCES),
75 Ampere CIB Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
75
12
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
CM75MX-12A
Units
Collector-Emitter Voltage (G-E Short)
VCES
600
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
75
Amperes
ICRM
150
Amperes
Ptot
280
Watts
Inverter Part IGBT/FWDi
Collector Current (DC, TC = 70°C)*2,*4
Collector Current (Pulse)*3
Total Power Dissipation (TC = 25°C)*2,*4
Emitter
Current*2
*1
IE
Emitter Current (Pulse)*3
IERM*1
75
Amperes
150
Amperes
Brake Part IGBT/ClampDi
Collector-Emitter Voltage (G-E Short)
VCES
600
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
Collector Current (DC, TC =
97°C)*2,*4
Collector Current (Pulse)*3
Total Power Dissipation (TC = 25°C)*2,*4
Repetitive Peak Reverse Voltage
Forward Current (TC =
25°C)*2
IC
50
Amperes
ICRM
100
Amperes
Ptot
280
Watts
VRRM
600
Volts
IF
50
Amperes
IFRM
100
Amperes
Repetitive Peak Reverse Voltage
VRRM
800
Volts
Recommended AC Input Voltage
Ea
220
Volts
DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)*2,*4
IO
75
Amperes
IFSM
750
Amperes
I 2t
2340
A2s
Forward Current (Pulse)*3
Converter Part ConvDi
Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive)
Current Square Time (Value for One Cycle of Surge Current)
Module
VISO
2500
Volts
Junction Temperature
Tj
-40 ~ +150
°C
Storage Temperature
Tstg
-40 ~ +125
°C
Chip Location (Top View)
FWDi
Converter Diode
NTC Thermistor
98.2
101.2
84.6
89.6
65.5
71.0
74.6
50.3
39.9
95.5
IGBT
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
54
SN
55
TN
56
RN
58
UN
UP
59
60
61
RP
3
4
5
6
37.0
2
26.6
0
1
SP
7
TP
8
VP
UN
VN
Br
Th
WN
WP
WN
30
29
28
27
26
25
17.8
27.1
33.6 35.2
24
23
9 10 11 12 13 14 15 16 17 18 19 20 21 22
73.0
77.8
81.4
86.1
91.4
97.9
57
WP
VP
VN
Br
UP
64.2
26.5 25.5
29.5 27.6
34.7
41.2
42.0 42.9
47.4
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
29.5
*1
*2
*3
*4
0
Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
Dimensions in mm (Tolerance: ±1mm)
2
Rev. 11/11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Tj = 25°C, IC = 75A, VGE = 15V*5
—
1.7
2.1
Volts
Tj = 125°C, IC = 75A, VGE =
15V*5
IC = 75A, VGE = 15V, Chip*5
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCE = 10V, VGE = 0V
—
1.9
—
Volts
—
1.6
—
Volts
—
—
7.5
nF
—
—
1.0
nF
—
—
0.3
nF
VCC = 300V, IC = 75A, VGE = 15V
—
200
—
nC
Inductive
Turn-on Delay Time
td(on)
—
—
100
ns
Load
Turn-on Rise Time
tr
VCC = 300V, IC = 75A, VGE = ±15V,
—
—
100
ns
Switch
Turn-off Delay Time
td(off)
RG = 8.2Ω, Inductive Load
—
—
300
ns
Time
Turn-off Fall Time
—
—
600
ns
—
2.0
2.8
Volts
—
­
1.95
—
Volts
Emitter-Collector Voltage
tf
*1
VEC
Tj = 25°C, IE = 75A, VGE =
0V*5
Tj = 125°C, IE = 75A, VGE = 0V*5
Reverse Recovery Time
Reverse Recovery Charge
trr*1
*1
Qrr
Internal Gate Resistance
rg
External Gate Resistance
RG
IE = 75A, VGE = 0V, Chip
­—
1.9
—
Volts
VCC = 300V, IE = 75A, VGE = ±15V
—
—
200
ns
RG = 8.2Ω, Inductive Load
—
1.8
—
µC
TC = 25°C, Per Switch
—
0
—
Ω
8.0
—
83
Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Rev. 11/11
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Brake Part IGBT/ClampDi
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 0V
5
6
7
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Tj = 25°C, IC = 50A, VGE = 15V*5
—
1.7
2.1
Volts
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
Internal Gate Resistance
Repetitive Reverse Current
Forward Voltage Drop
Tj = 125°C, IC = 50A, VGE = 15V*5
—
1.9
—
Volts
IC = 50A, VGE = 15V, Chip
—
1.6
—
Volts
—
—
9.3
nF
VCE = 10V, VGE = 0V
—
—
1.0
nF
—
—
0.3
nF
—
200
—
nC
VCC = 300V, IC = 50A, VGE = 15V
rg
TC = 25°C
—
0
—
Ω
IRRM
VR = VRRM
—
—
1.0
mA
VF
Tj = 25°C, IF = 50A*5
—
2.0
2.8
Volts
Tj = 125°C, IF = 50A*5
—
1.95
—
Volts
IF = 50A, Chip
External Gate Resistance
RG
—
1.9
—
Volts
13
—
125
Ω
—
—
20
mA
—
1.2
1.6
Volts
Converter Part
Repetitive Peak Reverse Current
Forward Voltage Drop
IRRM
VR = VRRM, Tj = 150°C
VF
IF =
75A*5
NTC Thermistor Part
Zero Power Resistance
R25
TC = 25°C*4
4.85
5.00
5.15
kΩ
Deviation of Resistance
∆R/R
R100 = 493Ω, TC = 100°C*4
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Approximate by
FWDi
Converter Diode
NTC Thermistor
98.2
101.2
84.6
89.6
65.5
71.0
74.6
50.3
39.9
95.5
IGBT
0
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
SN
55
TN
56
57
RN
58
UN
UP
59
60
61
RP
1
0
UP
2
3
4
SP
5
6
7
TP
8
WP
VP
VN
Br
VP
UN
VN
Br
Th
WN
WP
WN
30
29
28
27
26
25
17.8
27.1
33.6 35.2
24
23
9 10 11 12 13 14 15 16 17 18 19 20 21 22
73.0
77.8
81.4
86.1
91.4
97.9
54
26.5 25.5
29.5 27.6
34.7
41.2
42.0 42.9
64.2
R25
1
1
*6 B(25/50) = In(
)/(
–
)
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
Chip Location (Top View)
47.4
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
TC = 25°C*4
29.5
P25
37.0
B(25/50)
26.6
Power Dissipation
0
B Constant
Equation*6
Dimensions in mm (Tolerance: ±1mm)
4
Rev. 11/11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per Inverter IGBT*4
—
—
0.44
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per Inverter FWDi*4
—
—
0.85
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)Q
Brake IGBT*4
—
—
0.44
°C/W
Brake
ClampDi*4
Thermal Resistance, Junction to Case
Rth(j-c)D
—
—
0.85
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per ConvDi*4
—
—
0.24
°C/W
Contact Thermal Resistance
Rth(c-s)
Case to Heatsink, Per 1 Module
—
0.015
—
°C/W
Typ.
Max.
Thermal Grease Applied*4,*7
Mechanical Characteristics
Test Conditions
Min.
—
Module Weight (Typical)
Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
270
Grams
2500
Volts
ec
±0 to +100
µm
Baseplate*8
Chip Location (Top View)
FWDi
SN
55
26.5 25.5
29.5 27.6
34.7
41.2
42.0 42.9
Rev. 11/11
TN
56
57
RN
58
60
61
RP
2
3
4
SP
5
6
7
UP
98.2
101.2
84.6
89.6
WP
VP
VN
Br
UN
UP
VP
UN
TP
59
8
VN
Br
Th
WN
WP
WN
30
29
28
27
26
25
17.8
27.1
33.6 35.2
24
23
9 10 11 12 13 14 15 16 17 18 19 20 21 22
+ : CONVEX
73.0
77.8
81.4
86.1
91.4
97.9
64.2
47.4
37.0
– : CONCAVE
0
MOUNTING SIDE
65.5
71.0
74.6
29.5
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
54
Y
MOUNTING
SIDE
X
NTC Thermistor
0
1
MOUNTING SIDE
Converter Diode
95.5
IGBT
26.6
+ : CONVEX
– : CONCAVE
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
in-lb
—
0
Flatness of
Units
31
VISO
50.3
Symbol
Mounting Torque, M5 Mounting Screws
39.9
Characteristics
Dimensions in mm (Tolerance: ±1mm)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
15
125
3.5
Tj = 25°C
VGE = 20V
12
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
100
11
75
50
10
25
0
8
9
0
2
4
6
8
2.5
2.0
1.5
1.0
0.5
25
0
50
75
100
125
Tj = 25°C
8
IC = 150A
6
IC = 75A
4
IC = 30A
2
0
150
6
14
16
18
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
0
1
2
3
Cies
100
Coes
Cres
10-1
10-2
10-1
4
tf
103
td(off)
102
td(on)
101
100
101
102
100
100
VCC = 300V
tr
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
102
101
100
tr
td(on)
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, (Ω)
102
REVERSE RECOVERY, Irr (A), trr (ns)
td(off)
20
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Inductive Load
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
tf
20
104
101
103
SWITCHING TIME, (ns)
12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VGE = 0V
6
10
COLLECTOR-CURRENT, IC, (AMPERES)
Tj = 25°C
Tj = 125°C
101
8
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
EMITTER CURRENT, IE, (AMPERES)
3.0
0
10
10
VGE = 15V
Tj = 25°C
Tj = 125°C
SWITCHING TIME, (ns)
COLLECTOR CURRENT, IC, (AMPERES)
150
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
101
100
Irr
trr
101
EMITTER CURRENT, IE, (AMPERES)
102
IC = 75A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
100
200
300
GATE CHARGE, QG, (nC)
Rev. 11/11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
102
101
100
10-1
100
102
101
Err
100
10-1
100
10-3
102
10-2
10-1
10-3
100
10-2
10-5
10-4
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
2.0
1.5
1.0
0.5
0
10-3
10-3
102
VGE = 15V
Tj = 25°C
Tj = 125°C
0
25
50
75
COLLECTOR-CURRENT, IC, (AMPERES)
Rev. 11/11
100
103
Tj = 25°C
Tj = 125°C
102
101
100
100
10-1
101
10-2
Tj = 25°C
Tj = 125°C
100
0
1
2
102
0
0.5
1.0
1.5
2.0
FORWARD VOLTAGE, VF, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
2.5
101
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CONVERTER PART - TYPICAL)
101
Rth(j-c) =
0.24°C/W
(Converter
Diode)
TIME, (s)
3.0
Err
EMITTER CURRENT, IE, (AMPERES)
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.44°C/W
(IGBT)
Rth(j-c) =
0.85°C/W
(FWDi)
10-2
101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE RESISTANCE, RG, (Ω)
3.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
100
10-1
FORWARD CURRENT, IF, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 300V
VGE = ±15V
IE = 75A
Tj = 125°C
Inductive Load
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
101
100
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
10-1
100
102
FORWARD CURRENT, IF, (AMPERES)
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
100
101
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
Eon
Eoff
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive Load
Eon
Eoff
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
101
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
3
FORWARD VOLTAGE, VF, (VOLTS)
4
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
10-2
10-1
100
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.44°C/W
(IGBT)
Rth(j-c) =
0.85°C/W
(Clamp Diode)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
7
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