CM75MX-12A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts AJ AK AG A K E AH F G J L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 X W 54 Y 30 K 55 29 K28 V 56 57 V 59 60 S R 26 K K 61 Q 27 L 58 K B P 25 24 23 DETAIL "B" 1 2 3 4 5 6 7 8 M AN 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Y K T L K K L L K L K L K AF X AC AP AM N (4 PLACES) U H AD AL AE D DETAIL "A" P(52-53) DETAIL "B" ClampDi B(24-25) R S T (1-2) (5-6) (9-10) FWDi GUP(49) ESUP(48) GVP(44) ESVP(43) GWP(39) ESWP(38) U(13-14) V(17-18) W(21-22) GUN(34) GVN(33) GWN(32) GB(35) ConvDi N(57-58) TH1 (28) TH2 (29) P1(54-55) N1(60-61) ES(31) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions A B C D E F G H J K L M N P Q R S T U 4.79 2.44 0.51 4.49 4.33±0.02 3.89 3.72 0.16 0.51 0.15 0.45 0.6 0.22 Dia. 2.13 1.53 1.97±0.02 2.26 0.30 0.59 121.7 62.0 13.0 114.05 110.0±0.5 99.0 94.5 4.06 13.09 3.81 11.43 15.24 5.5 Dia. 54.2 39.0 50.0±0.5 57.5 7.75 15.0 V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP Rev. 11/11 Inches 0.3 0.46 0.16 0.08 Dia. 0.27 0.81 0.67 0.12 0.14 0.03 0.15 0.05 0.025 0.29 0.047 0.49 0.06 0.17 Dia. 0.10 Dia. Millimeters 7.62 11.66 4.2 2.1 Dia. 7.0 20.5 17.0 3.0 3.5 0.8 3.75 1.15 0.65 7.4 1.2 12.5 1.5 4.3 Dia. 2.5 Dia. Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter section, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sensing the baseplate temperature. 5th Generation CSTBT chips yield low loss. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM75MX-12A is a 600V (VCES), 75 Ampere CIB Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 75 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM75MX-12A Units Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 75 Amperes ICRM 150 Amperes Ptot 280 Watts Inverter Part IGBT/FWDi Collector Current (DC, TC = 70°C)*2,*4 Collector Current (Pulse)*3 Total Power Dissipation (TC = 25°C)*2,*4 Emitter Current*2 *1 IE Emitter Current (Pulse)*3 IERM*1 75 Amperes 150 Amperes Brake Part IGBT/ClampDi Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 97°C)*2,*4 Collector Current (Pulse)*3 Total Power Dissipation (TC = 25°C)*2,*4 Repetitive Peak Reverse Voltage Forward Current (TC = 25°C)*2 IC 50 Amperes ICRM 100 Amperes Ptot 280 Watts VRRM 600 Volts IF 50 Amperes IFRM 100 Amperes Repetitive Peak Reverse Voltage VRRM 800 Volts Recommended AC Input Voltage Ea 220 Volts DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)*2,*4 IO 75 Amperes IFSM 750 Amperes I 2t 2340 A2s Forward Current (Pulse)*3 Converter Part ConvDi Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) Current Square Time (Value for One Cycle of Surge Current) Module VISO 2500 Volts Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Chip Location (Top View) FWDi Converter Diode NTC Thermistor 98.2 101.2 84.6 89.6 65.5 71.0 74.6 50.3 39.9 95.5 IGBT 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 54 SN 55 TN 56 RN 58 UN UP 59 60 61 RP 3 4 5 6 37.0 2 26.6 0 1 SP 7 TP 8 VP UN VN Br Th WN WP WN 30 29 28 27 26 25 17.8 27.1 33.6 35.2 24 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 73.0 77.8 81.4 86.1 91.4 97.9 57 WP VP VN Br UP 64.2 26.5 25.5 29.5 27.6 34.7 41.2 42.0 42.9 47.4 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 29.5 *1 *2 *3 *4 0 Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) Dimensions in mm (Tolerance: ±1mm) 2 Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 75A, VGE = 15V*5 — 1.7 2.1 Volts Tj = 125°C, IC = 75A, VGE = 15V*5 IC = 75A, VGE = 15V, Chip*5 Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — 1.9 — Volts — 1.6 — Volts — — 7.5 nF — — 1.0 nF — — 0.3 nF VCC = 300V, IC = 75A, VGE = 15V — 200 — nC Inductive Turn-on Delay Time td(on) — — 100 ns Load Turn-on Rise Time tr VCC = 300V, IC = 75A, VGE = ±15V, — — 100 ns Switch Turn-off Delay Time td(off) RG = 8.2Ω, Inductive Load — — 300 ns Time Turn-off Fall Time — — 600 ns — 2.0 2.8 Volts — 1.95 — Volts Emitter-Collector Voltage tf *1 VEC Tj = 25°C, IE = 75A, VGE = 0V*5 Tj = 125°C, IE = 75A, VGE = 0V*5 Reverse Recovery Time Reverse Recovery Charge trr*1 *1 Qrr Internal Gate Resistance rg External Gate Resistance RG IE = 75A, VGE = 0V, Chip — 1.9 — Volts VCC = 300V, IE = 75A, VGE = ±15V — — 200 ns RG = 8.2Ω, Inductive Load — 1.8 — µC TC = 25°C, Per Switch — 0 — Ω 8.0 — 83 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Rev. 11/11 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Brake Part IGBT/ClampDi Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 0V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 50A, VGE = 15V*5 — 1.7 2.1 Volts Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Internal Gate Resistance Repetitive Reverse Current Forward Voltage Drop Tj = 125°C, IC = 50A, VGE = 15V*5 — 1.9 — Volts IC = 50A, VGE = 15V, Chip — 1.6 — Volts — — 9.3 nF VCE = 10V, VGE = 0V — — 1.0 nF — — 0.3 nF — 200 — nC VCC = 300V, IC = 50A, VGE = 15V rg TC = 25°C — 0 — Ω IRRM VR = VRRM — — 1.0 mA VF Tj = 25°C, IF = 50A*5 — 2.0 2.8 Volts Tj = 125°C, IF = 50A*5 — 1.95 — Volts IF = 50A, Chip External Gate Resistance RG — 1.9 — Volts 13 — 125 Ω — — 20 mA — 1.2 1.6 Volts Converter Part Repetitive Peak Reverse Current Forward Voltage Drop IRRM VR = VRRM, Tj = 150°C VF IF = 75A*5 NTC Thermistor Part Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R R100 = 493Ω, TC = 100°C*4 -7.3 — +7.8 % — 3375 — K — — 10 mW Approximate by FWDi Converter Diode NTC Thermistor 98.2 101.2 84.6 89.6 65.5 71.0 74.6 50.3 39.9 95.5 IGBT 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 SN 55 TN 56 57 RN 58 UN UP 59 60 61 RP 1 0 UP 2 3 4 SP 5 6 7 TP 8 WP VP VN Br VP UN VN Br Th WN WP WN 30 29 28 27 26 25 17.8 27.1 33.6 35.2 24 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 73.0 77.8 81.4 86.1 91.4 97.9 54 26.5 25.5 29.5 27.6 34.7 41.2 42.0 42.9 64.2 R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] Chip Location (Top View) 47.4 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. TC = 25°C*4 29.5 P25 37.0 B(25/50) 26.6 Power Dissipation 0 B Constant Equation*6 Dimensions in mm (Tolerance: ±1mm) 4 Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per Inverter IGBT*4 — — 0.44 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Inverter FWDi*4 — — 0.85 °C/W Thermal Resistance, Junction to Case Rth(j-c)Q Brake IGBT*4 — — 0.44 °C/W Brake ClampDi*4 Thermal Resistance, Junction to Case Rth(j-c)D — — 0.85 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per ConvDi*4 — — 0.24 °C/W Contact Thermal Resistance Rth(c-s) Case to Heatsink, Per 1 Module — 0.015 — °C/W Typ. Max. Thermal Grease Applied*4,*7 Mechanical Characteristics Test Conditions Min. — Module Weight (Typical) Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) 270 Grams 2500 Volts ec ±0 to +100 µm Baseplate*8 Chip Location (Top View) FWDi SN 55 26.5 25.5 29.5 27.6 34.7 41.2 42.0 42.9 Rev. 11/11 TN 56 57 RN 58 60 61 RP 2 3 4 SP 5 6 7 UP 98.2 101.2 84.6 89.6 WP VP VN Br UN UP VP UN TP 59 8 VN Br Th WN WP WN 30 29 28 27 26 25 17.8 27.1 33.6 35.2 24 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 + : CONVEX 73.0 77.8 81.4 86.1 91.4 97.9 64.2 47.4 37.0 – : CONCAVE 0 MOUNTING SIDE 65.5 71.0 74.6 29.5 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 54 Y MOUNTING SIDE X NTC Thermistor 0 1 MOUNTING SIDE Converter Diode 95.5 IGBT 26.6 + : CONVEX – : CONCAVE *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. in-lb — 0 Flatness of Units 31 VISO 50.3 Symbol Mounting Torque, M5 Mounting Screws 39.9 Characteristics Dimensions in mm (Tolerance: ±1mm) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 15 125 3.5 Tj = 25°C VGE = 20V 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 11 75 50 10 25 0 8 9 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 25 0 50 75 100 125 Tj = 25°C 8 IC = 150A 6 IC = 75A 4 IC = 30A 2 0 150 6 14 16 18 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) 102 0 1 2 3 Cies 100 Coes Cres 10-1 10-2 10-1 4 tf 103 td(off) 102 td(on) 101 100 101 102 100 100 VCC = 300V tr VGE = ±15V RG = 8.2Ω Tj = 125°C Inductive Load 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 102 101 100 tr td(on) VCC = 300V VGE = ±15V IC = 75A Tj = 125°C Inductive Load 101 GATE RESISTANCE, RG, (Ω) 102 REVERSE RECOVERY, Irr (A), trr (ns) td(off) 20 VCC = 300V VGE = ±15V RG = 8.2Ω Tj = 25°C Inductive Load GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 tf 20 104 101 103 SWITCHING TIME, (ns) 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VGE = 0V 6 10 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C 101 8 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 102 101 100 Irr trr 101 EMITTER CURRENT, IE, (AMPERES) 102 IC = 75A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 GATE CHARGE, QG, (nC) Rev. 11/11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts 102 101 100 10-1 100 102 101 Err 100 10-1 100 10-3 102 10-2 10-1 10-3 100 10-2 10-5 10-4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 2.0 1.5 1.0 0.5 0 10-3 10-3 102 VGE = 15V Tj = 25°C Tj = 125°C 0 25 50 75 COLLECTOR-CURRENT, IC, (AMPERES) Rev. 11/11 100 103 Tj = 25°C Tj = 125°C 102 101 100 100 10-1 101 10-2 Tj = 25°C Tj = 125°C 100 0 1 2 102 0 0.5 1.0 1.5 2.0 FORWARD VOLTAGE, VF, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 2.5 101 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CONVERTER PART - TYPICAL) 101 Rth(j-c) = 0.24°C/W (Converter Diode) TIME, (s) 3.0 Err EMITTER CURRENT, IE, (AMPERES) 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.44°C/W (IGBT) Rth(j-c) = 0.85°C/W (FWDi) 10-2 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) GATE RESISTANCE, RG, (Ω) 3.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 10-1 FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 75A Tj = 125°C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 100 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 VCC = 300V VGE = ±15V RG = 8.2Ω Tj = 125°C Inductive Load 10-1 100 102 FORWARD CURRENT, IF, (AMPERES) 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 100 101 VCC = 300V VGE = ±15V IC = 75A Tj = 125°C Inductive Load Eon Eoff REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V RG = 8.2Ω Tj = 125°C Inductive Load Eon Eoff SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 101 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 3 FORWARD VOLTAGE, VF, (VOLTS) 4 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - TYPICAL) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.44°C/W (IGBT) Rth(j-c) = 0.85°C/W (Clamp Diode) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 7