AP3700M
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
30V
20mΩ
ID
▼ RoHS Compliant & Halogen-Free
SO-8
S1
S2
G1
G2
7.8A
P-CH BVDSS
Description
AP3700 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
-30V
RDS(ON)
45mΩ
ID
-5.5A
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
.
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Drain Current, VGS @ 10V
3
7.8
-5.5
A
Drain Current, VGS @ 10V
3
6.2
-4.4
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201508281
AP3700M
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
VGS=10V, ID=7A
-
-
20
mΩ
VGS=4.5V, ID=6A
-
-
32
mΩ
VGS=0V, ID=250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
2
V
gfs
Forward Transconductance
VDS=5V, ID=7A
-
24
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.4
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
525
840
pF
Coss
Output Capacitance
VDS=15V
-
95
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Gate Resistance
f=1.0MHz
-
2.4
4.8
Ω
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
10
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
3
-
nC
2
AP3700M
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
45
mΩ
VGS=-4.5V, ID=-4A
-
-
85
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-2
V
gfs
Forward Transconductance
VDS=-5V, ID=-5A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
5.2
8.3
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
25
-
ns
tf
Fall Time
VGS=-10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=-15V
-
100
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Gate Resistance
f=1.0MHz
-
11
22
Ω
Min.
Typ.
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Test Conditions
VGS=0V, ID=-250uA
.
Max. Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.5A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
12
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
4
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP3700M
N-Channel
30
30
10V
7.0V
6.0V
5.0V
V G = 4.0V
20
10
0
20
10
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.6
22
I D =7A
V G =10V
I D = 6A
o
T A = 25 C
2.2
20
18
.
Normalized R DS(ON)
RDS(ON0 (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 ℃
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
1.8
1.4
1.0
16
30
0.6
14
-30
0.2
2
4
6
8
10
-100
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
T j =25 o C
T j =150 o C
IS(A)
Normalized VGS(th)
6
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP3700M
N-Channel
f=1.0MHz
800
ID=6A
V DS = 15 V
600
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
C iss
400
200
2
C oss
C rss
0
0
0
2
4
6
1
8
5
9
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
0.01
T A =25 o C
Single Pulse
DC
0.001
.
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP3700M
N-Channel
10
2.4
2
PD, Power Dissipation(W)
ID , Drain Current (A)
8
6
4
1.6
1.2
0.8
2
0.4
0
0
25
50
75
100
125
150
0
50
o
150
o
T A , Ambient Temperature ( C )
T A , Ambient Temperature( C)
Fig 13. Drain Current v.s. Ambient
Temperature
Fig 14. Total Power Dissipation
30
80
T j =25 o C
40
.
4.5V
V GS = 10V
20
ID , Drain Current (A)
V DS =5V
60
RDS(ON) (mΩ)
100
20
10
T j =150 o C
o
T j =25 C
o
T j = -55 C
0
0
0
4
8
12
16
20
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
24
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 16. Transfer Characteristics
6
AP3700M
P-Channel
20
30
-10V
-7.0V
-6.0V
-5.0V
T A = 150 o C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G = - 4.0V
10
12
-10V
-8.0V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
8
4
0
0
0
2
4
6
8
0
10
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
2.2
80
I D = -5 A
V G = - 10V
I D = -4 A
T A =25 o C
1.8
60
50
.
Normalized R DS(ON)
70
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
1.4
1.0
0.6
40
30
-30
0.2
30
2
4
6
8
-100
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D = - 250uA
1.6
-IS(A)
Normalized VGS(th)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
7
AP3700M
P-Channel
f=1.0MHz
8
1000
800
6
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -4A
V DS = -15V
600
C iss
4
400
2
200
C oss
C rss
0
0
0
2
4
6
8
10
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
-ID (A)
10
100us
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
.
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
DC
0.01
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
8
AP3700M
P-Channel
8
2.4
PD, Power Dissipation(W)
-ID , Drain Current (A)
2
6
4
2
1.6
1.2
0.8
0.4
0
0
25
50
75
100
125
150
0
50
o
150
o
T A , Ambient Temperature ( C )
T A , Ambient Temperature( C)
Fig 13. Drain Current v.s. Ambient
Temperature
Fig 14. Total Power Dissipation
200
20
T j =25 o C
V DS = -5V
160
16
120
.
80
-4.5V
-ID , Drain Current (A)
RDS(ON) (mΩ)
100
12
8
T j =150 o C
V GS = -10V
40
4
0
0
T j =25 o C
o
T j = -55 C
0
2
4
6
8
10
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
12
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 16. Transfer Characteristics
9
AP3700M
MARKING INFORMATION
Part Number
3700
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
10