isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS131H DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS131H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ 0.25 1.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 200 pF VBE(sat) TYP. MAX UNIT V 7 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf IC= 3A ;IB1= 0.3A;IB2= -0.6A Fall Time isc website：www.iscsemi.cn 2 0.4 μs 1.2 μs 0.12 μs