BYV26A thru BYV26G ® Pb BYV26A thru BYV26G Pb Free Plating Product 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Features D D D D D Unit: inch(mm) Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Applications Switched mode power supplies High–frequency inverter circuits 94 9539 Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol BYV 26A Type Number Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Reverse Recovery Time (Note 1) o Maximum DC Reverse Current @ TA=25 C o at Rated DC Blocking Voltage @ TA =150 C Maximum Instantaneous Forward Voltage o @ 1.0A @ T A=25 C o @ 1.0A @ T A=175 C BYV 26B BYV 26C BYV 26D BYV 26E BYV 26G Units VRRM 200V 400V 600V 800V 1000V 1400V V VDC 300V 500V 700V 900V 1100V 1500V V I(AV) 1.0 A IFSM 30 A Trr nS 75 30 IR 5.0 100 uA uA VF 2.5 1.3 V Maximum Reverse recovery Current Slope dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS dv/dt 7 A/uS Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Cj R θJA Operating Temperature Range Storage Temperature Range TJ TSTG Notes: 45 40 -55 to +175 -55 to +175 o pF C /W o C o C 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on PCB. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ BYV26A thru BYV26G ® PR – Maximum Reverse Power Dissipation ( mW ) Characteristics (Tj = 25_C unless otherwise specified) 600 500 RthJA=45K/W VR=1000V 400 RthJA=100K/W 800V 300 600V 200 400V 100 I R – Reverse Current ( mA ) 1000 100 10 1 200V VR = VR RM 0 0.1 0 40 80 120 160 200 Tj – Junction Temperature ( °C ) 95 9728 0 120 160 200 Figure 2. Max. Reverse Current vs. Junction Temperature 1.2 I FAV– Average Forward Current ( A ) 80 Tj – Junction Temperature ( °C ) 95 9729 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 10 Tj = 175°C I F – Forward Current ( A ) 1.0 RthJA=45K/W L=10mm 0.8 0.6 0.4 RthJA=100K/W PCB 0.2 0 1 Tj = 25°C 0.1 0.01 0.001 0 95 9730 40 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 0 95 9731 1 2 3 4 5 6 7 VF – Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/