HY4N60T / HY4N60FT 600V / 4.0A 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 G 23 D S Mechanical Information 1 G 23 D S ITO-220AB TO-220AB • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY4N60T 4N60T TO-220AB 50PCS/TUBE HY4N60FT 4N60FT ITO-220AB 50PCS/TUBE 1 Gate Gate 3 Source Absolute Maximum Ratings (TC=25OC unless otherwise noted ) P a ra me te r S ymb o l HY4 N6 0 T HY4 N6 0 F T Uni ts D ra i n-S o urc e Vo lta g e V DS 600 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt T C =2 5 O C 1) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T C =2 5 O C Avalanche Energy with Single Pulse IAS=4A, VDD=90V, L=27.5mΗ Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e ID 4 4 A ID M 16 16 A PD 71 0 .5 7 26 0 .2 1 W E AS 220 mJ T J ,T S TG -5 5 to +1 5 0 O C Note : 1. Maximum DC current limited by the package Thermal Characteristics PA RA M E TE R S ym b o l HY4 N6 0 T HY4 N6 0 F T Uni ts Junction-to-Case Thermal Resistance R θJC 1 .7 6 4.8 O C /W Junction-to Ambient Thermal Resistance R θJA 6 2 .5 100 O C /W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV1.0 : AUG. 2011 PAGE . 1 HY4N60T / HY4N60FT Electrical Characteristics ( TC=25OC unless otherwise noted ) P a ra m e te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, I D =2 5 0 uA 600 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 2.0A - 2.0 2.4 Ω I DSS VDS=600V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 1 5 .4 22 - 3 .8 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urr e nt Gate Body Leakage Dynamic To ta l Ga te C ha r g e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 5.4 - Turn- On D e la y Ti me t d (o n) - 12.4 16 - 13.2 18 - 2 2 .8 32 f - 9 .6 14 - 460 620 - 63 72 - 1.8 5.6 Turn- On Ri s e Ti m e Turn- Off D e la y Ti m e t t r d (o ff) Turn- Off F a ll Ti m e t Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C oss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =4 8 0 V, ID = 4 .0 A V GS =1 0 V VDD=300V , I D =4.0A VGS=10V ,RG=25Ω V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 4 .0 A M a x.P uls e d S o urc e C urre nt I SM - - - 16 A D i o d e F o rwa rd Vo lta g e V SD IS = 4 .0 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t - 290 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 4 .0 A d i /d t=1 0 0 A /us - 2 .8 - uC rr rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. REV1.0 : AUG. 2011 PAGE . 2 HY4N60T / HY4N60FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 10 VGS= 20V~ 8.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 8 7.0V 6 6.0V 4 2 5.0V 0 VDS =50V 1 25oC TJ = 125oC -55oC 0.1 0 10 20 30 40 50 1 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 9 8 3 RDS(ON) - On Resistance( Resistance(Ω Ω) RDS(ON) - On Resistance( Resistance(Ω Ω) 8 Fig.2 Transfer Characteristric 3.2 2.8 2.6 2.4 VGS=10V 2.2 VGS = 20V 2 1.8 ID =2.0A 6 4 2 0 1.6 0 2 4 6 8 4 10 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 800 12 f = 1MHz VGS = 0V VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 600 Ciss 400 200 Coss Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0 : AUG. 2011 30 ID =4A 10 VDS=520V VDS=325V 8 VDS=130V 6 4 2 0 0 4 8 12 16 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE. 3 HY4N60T / HY4N60FT Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 1.2 VGS =10 V ID =2.0A 2.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 0.5 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV 1.0 : AUG. 2011 PAGE. 4