NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.6 W W/°C TJ, Tstg − 65 to +150 °C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range COLLECTOR 2, 4 1 BASE EMITTER 3 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W EMITTER 3 MARKING DIAGRAM 4 TO−3P CASE 340AB STYLES 1,2,3 1 THERMAL CHARACTERISTICS COLLECTOR 2, 4 1 BASE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Characteristic NPN PNP MAXIMUM RATINGS 2 NJW2119xG AYWW 3 x G A Y WW 1 = 3 or 4 = Pb−Free Package = Assembly Location = Year = Work Week 2 3 ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Package Shipping NJW21193G TO−3P (Pb−Free) 30 Units/Rail NJW21194G TO−3P (Pb−Free) 30 Units/Rail Publication Order Number: NJW21193/D NJW21193G (PNP) NJW21194G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 4.0 2.25 − − − − 20 8 − − 80 − − − 2.2 − − − − 1.4 4 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % NPN NJW21194G f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP NJW21193G 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G NPN NJW21194G 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP NJW21193G NPN NJW21194G 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 Figure 3. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 6. DC Current Gain, VCE = 5 V PNP NJW21193G NPN NJW21194G 30 35 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 1.0 10 IC COLLECTOR CURRENT (AMPS) 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G NPN NJW21194G 1.4 TJ = 25°C IC/IB = 10 2.5 2.0 1.5 1.0 VBE(sat) 0.5 TJ = 25°C IC/IB = 10 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 0.1 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages NPN NJW21194G 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP NJW21193G TJ = 25°C 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 TJ = 25°C VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage PNP NJW21193G NPN NJW21194G 100 10 mSec IC, COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) 10 1.0 VCE = 20 V (SOLID) 100 100 mSec 10 1 Sec 1.0 10 mSec 100 mSec 10 1 Sec 1.0 0.1 0.1 1.0 10 100 1.0 1000 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 4 NJW21193G (PNP) NJW21194G (NPN) The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 10000 10000 TC = 25°C C, CAPACITANCE (pF) Cib 1000 Cob 100 0.1 Cib 1000 Cob f(test) = 1 MHz) f(test) = 1 MHz) 1.0 10 100 0.1 100 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. NJW21193G Typical Capacitance Figure 16. NJW21194G Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TC = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 100 NJW21193G (PNP) NJW21194G (NPN) +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 W NJW21193G (PNP) NJW21194G (NPN) PACKAGE DIMENSIONS TO−3P−3LD CASE 340AB−01 ISSUE A B A B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L (3°) P K 1 2 3 3X D 0.25 G M A B S H J F W G STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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