NJSEMI MRF327 Npn silicon rf power transistor Datasheet

<^s,m.i-Contiu.ctoi ZPtoauati, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF Line
NPN Silicon
MRF327
RF Power Transistor
. . . designed primarily for wideband large-signal output amplifier stages in the
100 to 500 MHz frequency range.
•
•
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
SOW, 100 to 500 MHz
CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
Built-in Matching Network for Broadband Operation Using Double Match
Technique
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Gold Metallization System for High Reliability Applications
« Characterized for 100 to 500 MHz
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
VCEO
33
Vdc
VCBO
VEBO
60
Vdc
4.0
Vdc
Adc
Collector Current — Continuous
— Peak
"c
9.0
12
Total Device Dissipation @ TC = 25°C (1 )
Derate above 25°C
PD
250
1.43
Watts
W/°C
Tstg
-65 to +150
°f*
Storage Temperature Range
CASE 316-01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
Rejc
0.7
°C/W
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(1C = 80 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 8.0 mAdc, lc = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector-Base Breakdown Voltage
(lc = 80 mAdc, lc = 0)
V(BR)CBO
60
—
—
Vdc
ICBO
—
—
5.0
mAdc
hFE
20
Cob
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 vdc, IE = o>
ON CHARACTERISTICS
I DC Current Gain (lc = 4.0 Adc, VCE = 5.0 Vdc)
80
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1 .0 MHz)
95
125
PF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
ELECTRICAL CHARACTERISTICS - continued (TC = 25°c unless otherwise noted.)
Symbol
Min
Typ
Common-Emitter Amplifier Power Gain
(Vcc = 28Vdc. pout = 80 W, f = 400 MHz)
GPE
7.3
Collector Efficiency
(Vcc = 28 Vdc, Pout = 80 W, f = 400 MHz)
T!
50
Load Mismatch
(VCc = 28 Vdc, Pout = 80 W, f = 400 MHz,
VSWR = 30:1 All Phase Angles)
V
Characteristic
|
Max
Unit
9.0
—
dB
60
—
%
FUNCTIONAL TESTS (Figure 1)
No Degradation in Output Power
0 + vcc
_ 28 Vdc
RF
OUTPUT
C1, C2, C7, C8, C9 — 1.0-20 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 — 36 pF ATC 100 mil Chip Capacitor
C5, C6 — 43 pF ATC 100 mil Chip Capacitor
C10—100pFUNELCO
C11, C15 —0.1 (iF Erie Redcap
C12, C13 — 680 pFFeedttiru
C14 — 1.0 nF 50 V Tantalum
L1 — 4 Turns #22 AWG Enameled, 3/16" ID Closewound with Ferroxcube
Bead (#56-590-65/46) on Ground End of Coil
L2 — Ferroxcube VK200-19/4B Ferrite Choke
L3 — 7 Turns #18 AWG, 11/16" Long, Wound on a 100 k£2 2.0 Watt Resistor
L4 — 6 Turns #20 AWG Enameled, 3/16" ID Closewound
L5 — 4 Turns #22 AWG Enameled, 1/8" ID Closewound
Z1 — Microstrip 0.2" W x 1.5" L
Z2 — Microstrip 0.17" W x 1.16" L
Z3 — Microstrip 0.17" W x 0.63" L
R1, R2 —10i22.0 Watt
Board — Glass Teflon er = 2.56, t = 0.062"
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80-mil-Thick Copper
Figure 1. 400 MHz Test Circuit
Similar pages