AP9468GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
BVDSS
40V
RDS(ON)
7mΩ
ID
80A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widly preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
□
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
40
V
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
55
A
320
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
89
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
1.4
℃/W
62
℃/W
1
201008021
AP9468GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=45A
-
-
7
mΩ
VGS=4.5V, ID=30A
-
-
9
mΩ
0.5
-
1.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
36
58
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=1.0Ω
-
36
-
ns
tf
Fall Time
VGS=10V
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
2235 3580
pF
Coss
Output Capacitance
VDS=25V
-
365
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
325
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=20A, VGS=0V,
-
38
-
ns
dI/dt=100A/µs
-
30
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GP-HF
240
240
10V
7.0 V
5.0V
4.5 V
ID , Drain Current (A)
200
T C =150 o C
160
120
V G = 3.0 V
80
40
160
120
V G =3.0V
80
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
I D =30A
T C =25 o C
1.6
Normalized RDS(ON)
7
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
8
6
1.2
0.8
5
0.4
4
2
4
6
8
25
10
50
75
100
125
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
8.0
T j =25 o C
T j =150 o C
30
7.0
RDS(ON) (mΩ)
IS(A)
10V
7 .0V
5.0V
4.5 V
200
ID , Drain Current (A)
o
T C =25 C
20
V GS =4.5V
6.0
V GS =10V
10
5.0
0
4.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9468GP-HF
f=1.0MHz
4000
12
I D =30A
VGS , Gate to Source Voltage (V)
10
3000
C (pF)
V DS =20V
V DS =25V
V DS =30V
8
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V DS =5V
VG
ID , Drain Current (A)
200
T j =25 o C
T j =150 o C
QG
160
4.5V
QGS
120
QGD
80
40
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4