LAPIS FEDR27V6441L-002-03 64mâ word ã 1â bit serial production programmed rom (p2rom) Datasheet

FEDR27V6441L-002-03
Issue Date: Oct. 01, 2008
MR27V6441L
64M–Word × 1–Bit Serial Production Programmed ROM (P2ROM)
GENERAL DESCRIPTION
The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864
word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply and a Serial
Peripheral Interface (SPI) compatible serial bus.
The MR27V6441L have data programmed and have functions tested at LAPIS Semiconductor factory. (Using the
DC pins for the programming function is NOT allowed.)
FEATURES
· 67,108,864-word × 1-bit configuration
· +3.0 V to 3.6 V power supply
· Access time
33 MHz serial clock (FAST-READ)
20 MHz serial clock (READ)
· Read Identification Instruction
· Active read current
30 mA MAX (FAST-READ)
20 mA MAX (READ)
· Standby current
50 µA MAX
· Serial Clock Input and Data Input/Output
· Input Data Format
1-byte command code, 3-byte address, 1-byte dummy
(FAST-READ)
1-byte command code, 3-byte address
(READ)
PIN CONFIGURATION (TOP VIEW)
NC
VCC
NC
DC
NC
NC
#CS
SO
1
16 SCLK
2
15 SI
3
14 NC
4
13 NC
5
12 NC
6
11 NC
7
10 VSS
8
9
NC
16SOP
PACKAGES
· MR27V6441L-xxxMP
16-pin plastic SOP (P-SOP16-375-1.27-K)
PIN DESCRIPTIONS
Pin name
#CS
Functions
Chip Select
SI
Serial Data Input
SO
Serial Data Output
SCLK
VCC
VSS
DC
NC
Clock Input
Power supply voltage
Ground
Don’t care ( 0v - Vcc )
<for reference> Program power supply voltage Vpp under Programming operation
No connection
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MR27V6441L / P2ROM
READ COMMAND DEFINITION
Command
Note
Read Array (byte)
1st
03[H]
1
2nd
AD1
2
3rd
AD2
2
AD3
2
N byte read out until #CS goes high
3
4th
Action
Note:
st
1. The 1 command 03[H] is a Read command
2. AD1 to AD3 are address input data
3. Data output
Details of Command are shown as follows.
1-byte command code
READ:
0
0
0
X
A22
A21
A20
A15
A14
A13
A12
A6
A5
A4
A3
3-byte address
AD1:
AD2:
AD3:
A7
0
0
0
1
1
A19
A18
A17
A16
A11
A10
A9
A8
A2
A1
A0
Note:
X: Dummy bit
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MR27V6441L / P2ROM
FAST-READ COMMAND DEFINITION
Command
Note
Read Array (byte)
1st
0B[H]
1
2nd
AD1
2
3rd
AD2
2
4th
AD3
2
5th
X
3
N byte read out until #CS goes high
4
Action
Note:
st
1. The 1 command 0B[H] is a Read command
2. AD1 to AD3 are address input data
3. X is a dummy cycle
4. Data output
Details of Command are shown as follows.
1-byte command code
FAST-READ:
3-byte address
0
0
0
0
1
0
1
1
AD1:
X
A22
A21
A20
A19
A18
A17
A16
AD2:
A15
A14
A13
A12
A11
A10
A9
A8
AD3:
A7
A6
A5
A4
A3
A2
A1
A0
Note:
X: Dummy bit
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
READ IDENTIFICATION COMMAND DEFINITION
Command
1
Note
Read Array (byte)
st
Action
9F[H]
1
3 byte read out
2
Note:
st
1. The 1 command 9F[H] is a Read Identification command
2. Identification output
Details of Command are shown as follows.
1-byte command code
RDID
1
0
0
1
1
1
1
1
IDENTIFICATION DEFINITION
Manufacturer Identification
AE[H]
Device Identification
Type
41[H]
Capacity
15[H]
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MR27V6441L / P2ROM
DEVICE OPERATION
1. Command “03h” or “0Bh” makes this LSI become and keep active mode until next #CS High.
2. Incorrect command makes this LSI become and keep standby mode until next #CS Low. In standby mode, SO
pin is High-Z.
COMMAND DESCRIPTION
1. Read Array
This command consists of the 4-byte code. The 1st code is a command which decides if the device becomes
standby or active mode. The 1st code “03h”activates the device. The 2nd code to the 4th code are address.
2. Fast-Read Array
This command consists of the 5-byte code. The 1st code is a command which decides if the device becomes
standby or active mode. The 1st code “0Bh”activates the device. The 2nd code to the 4th code are address. The 5th
code is a dummy cycle.
3. Read Identification Array
This command consists of the 1-byte code. The 1st code is a command which decides if the device becomes
standby or active mode. The 1st code “9Fh”activates the device.
4. Standby
When #CS is high , the device is put in standby mode at the next rising edge of SCLK. Maximum standby
current is 50uA. When the above-mentioned 1st code is incorrect command , the device is put in standby mode
at the next rising edge of SCLK.
DATA SEQUENCE
The data is serially sent out through SO pin, synchronized with the falling edge of SCLK. Meanwhile input data is
also serially read in through SI pin, synchronized with the rising edge of SCLK. The bit sequence for both input
and output data are bit7 (MSB) first, bit6, bit5, …, and bit0(LSB).
ADDRESS SEQUENCE
The address assignment is described at the COMMAND DEFINITION on page 2 or 3.
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Condition
Tstg
—
Storage temperature
Value
Unit
–55 to 125
°C
–0.5 to VCC+0.5
V
–0.5 to VCC+0.5
V
Input voltage
VI
Output voltage
VO
Power supply voltage
VCC
–0.5 to 5
V
Power dissipation per package
PD
Ta = 25°C
1.0
W
Output short circuit current
IOS
—
10
mA
relative to VSS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
(Ta = 0 to 70°C)
Unit
Min.
Typ.
Max.
0
—
70
°C
3.0
—
3.6
V
Operating temperature
under bias
VCC power supply voltage
VCC
Input “H” level
VIH
2.4
—
VCC+0.5∗
V
Input “L” level
VIL
–0.5∗∗
—
0.6
V
Ta
VCC = 3.0 to 3.6 V
Voltage is relative to VSS.
∗ : Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗ : -1.5V(Min.) when pulse width of undershoot is less than 10ns.
PIN CAPACITANCE
(VCC = 3.3 V, Ta = 25°C, f = 1 MHz)
Typ.
Max.
Unit
Parameter
Symbol
Condition
Min.
Input
CIN1
VI = 0 V
—
—
Output
COUT
VO = 0 V
—
—
10
DC
CDC
VI = 0 V
—
—
200
10
pF
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
ELECTRICAL CHARACTERISTICS
DC CHARACTERISTICS
Parameter
(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Typ.
Max.
Unit
Symbol
Condition
Min.
Input leakage current
ILI
VI = 0 to VCC
—
—
10
μA
Output leakage current
ILO
VO = 0 to VCC
—
—
10
μA
ICCSC
#CS = VCC
—
—
50
μA
ICCST
#CS = VIH
—
—
1
mA
—
—
20
mA
—
—
30
mA
—
2.4
—
VCC+0.5∗
V
VCC power supply current
(Standby)
VCC power supply current
(Read)
ICC1
VCC power supply current
(Fast-Read)
ICC1F
Input “H” level
VIH
#CS = VIL
f=20MHz
#CS = VIL
f=33MHz
Input “L” level
VIL
—
–0.5∗∗
—
0.6
V
Output “H” level
VOH
IOH = –100 μA
2.4
—
—
V
Output “L” level
VOL
IOL = 500 μA
—
—
0.4
V
Voltage is relative to VSS.
∗ : Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗ : -1.5V(Min.) when pulse width of undershoot is less than 10ns.
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
AC CHARACTERISTICS
FAST-READ
Parameter
(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Min.
Max.
Unit
Symbol
Condition
Clock frequency
tSCLK
—
—
33
MHz
Clock high time
tSKH
—
12
—
ns
Clock low time
tSKL
—
12
—
ns
Clock rise time
tR
—
—
3
ns
Clock fall time
tF
—
—
3
ns
#CS lead clock time
tCSA
—
10
—
ns
#CS setup time
tCS
—
10
—
ns
#CS lag clock time
tCSB
—
5
—
ns
#CS hold time
tCH
—
5
—
ns
#CS high time
tCSH
—
80
—
ns
SI setup time
tDS
—
5
—
ns
SI hold time
tDH
—
10
—
ns
Access time
tAA
—
—
15
ns
SO hold time
tDOH
—
0
—
ns
SO floating time
tDOZ
—
—
10
ns
READ
Parameter
(VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Min.
Max.
Unit
Symbol
Condition
Clock frequency
tSCLK
—
—
20
MHz
Clock high time
tSKH
—
20
—
ns
Clock low time
tSKL
—
20
—
ns
Clock rise time
tR
—
—
5
ns
Clock fall time
tF
—
—
5
ns
#CS lead clock time
tCSA
—
10
—
ns
#CS setup time
tCS
—
10
—
ns
#CS lag clock time
tCSB
—
5
—
ns
#CS hold time
tCH
—
5
—
ns
#CS high time
tCSH
—
80
—
ns
SI setup time
tDS
—
5
—
ns
SI hold time
tDH
—
10
—
ns
Access time
tAA
—
—
15
ns
SO hold time
tDOH
—
0
—
ns
SO floating time
tDOZ
—
—
10
ns
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
Output load
0 V/Vcc
Output
0.3Vcc/0.7Vcc
30 pF
0.5Vcc
30 pF
(Including scope and jig)
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
TIMING CHART (READ CYCLE)
Serial Data Input/Output Timing
tCSH
tCSB
tCSA
#CS
tCS
tF
tR
tCYC
tCH
SCLK
tSKH
BIT 7
SI
tSKL
BIT 6
BIT 0
tDS tDH
BIT 6
BIT 7
SO
tAA
tDOH
BIT 0
tDOZ
Standby Timing
#CS
SCLK
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
SI
st
1 byte = incorrect code
Hi-Z
SO
Standby
Standby
Incorrect command makes this LSI become and keep standby mode until next #CS rising edge. In standby mode,
SO pin is High-Z.
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
Read Array Timing Waveform
#CS
SCLK
*note1
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5 BIT 4 BIT 3
SI
st
1 byte Command
2
nd
byte AD1
SO
Hi-Z
#CS
SCLK
*note2
BIT 1 BIT 0
SI
Don’t Care
th
4 byte AD3
SO
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5
Hi-Z
st
1 data output
2
nd
data output
#CS
SCLK
SI
SO
BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7
Hi-Z
th
(N-1) data output
th
N data output
th
(N+1) data output
Note:
1. Input data are latched at SCLK-rising edge.
2. Data-output starts at SCLK-falling edge in bit0 of the 4th byte.
10/15
FEDR27V6441L-002-03
MR27V6441L / P2ROM
Fast Read Array Timing Waveform
#CS
SCLK
*note1
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5 BIT 4 BIT 3
SI
st
1 byte Command
2
nd
byte AD1
SO
Hi-Z
#CS
SCLK
*note2
BIT 1 BIT 0
SI
Don’t Care
th
5 byte DUMMY
SO
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5
Hi-Z
st
1 data output
2
nd
data output
#CS
SCLK
SI
SO
BIT 3 BIT 2 BIT 1 BIT 0 BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 BIT 7
th
(N-1) data output
th
N data output
th
Hi-Z
(N+1) data output
Note:
1. Input data are latched at SCLK-rising edge.
2. Data-output starts at SCLK-falling edge in bit0 of the 5th byte.
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
Read Identification Timing Waveform
#CS
SCLK
*note1
SI
*note2
Don’t Care
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0
st
1 byte Command
SO
BIT 7 BIT 6 BIT 5 BIT 4 BIT 3
Hi-Z
Manufacturer Identification
tCSB
#CS
SCLK
SI
SO
Don’t Care
BIT 1 BIT 0 BIT15 BIT14 BIT13
BIT 2 BIT 1 BIT 0
Hi-Z
Device Identification
Note:
1. Input data are latched at SCLK-rising edge.
2. Data-output starts at SCLK-falling edge in bit0 of the 1st byte.
12/15
FEDR27V6441L-002-03
MR27V6441L / P2ROM
PACKAGE DIMENSIONS
(Unit: mm)
Notes for Mounting the Surface Mount Type Package
The surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed in
storage.
Therefore, before you perform reflow mounting, contact ROHM’s responsible sales person for the product name,
package name, pin number, package code and desired mounting conditions (reflow method, temperature and
times).
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FEDR27V6441L-002-03
MR27V6441L / P2ROM
REVISION HISTORY
Document
No.
FEDR27V6441L-02-01
FEDR27V6441L-02-02
FEDR27V6441L-02-03
FEDR27V6441L-002-03
Page
Date
Previous
Edition
Current
Edition
Oct. 28, 2005
–
–
1
1
6
6
8
8
2
2
3
3
13
13
–
–
Nov. 9, 2006
Mar. 16, 2007
Oct. 1, 2008
Description
Final edition 1
PIN DESCRIPTIONS
DC:
Don’t care (H or L or Open)
-- > Don’t care ( 0v - Vcc )
PIN CAPACITANCE
CIN1 12 pF --- > 10 pF MAX
COUT 12 pF --- > 10 pF MAX
AC Characteristics
FAST-READ & READ
tCS 5 ns -- > 10 ns Min
tDS 2 ns -- > 5 ns Min
tDOZ 8 ns -- > 10 ns Max
FAST-READ
tR 0.1 V/ns Min -- > 3 ns Max
tF 0.1 V/ns Min -- > 3 ns Max
READ
tR 0.1 V/ns Min -- > 5 ns Max
tF 0.1 V/ns Min -- > 5 ns Max
3-byte address (0 to 3FFF[H]) --> 3-byte
address
3-byte address (0 to 3FFF[H]) --> 3-byte
address
Replaced package diagram
Changed company logo and name
to OKI SEMICONDUCTOR
14/15
FEDR27V6441L-002-03
MR27V6441L / P2ROM
NOTICE
No copying or reproduction of this document, in part or in whole, is permitted without the consent of LAPIS
Semiconductor Co., Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing LAPIS Semiconductor's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be
obtained from LAPIS Semiconductor upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, LAPIS Semiconductor shall
bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. LAPIS Semiconductor does not grant you, explicitly or implicitly, any
license to use or exercise intellectual property or other rights held by LAPIS Semiconductor and other parties.
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technical information.
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Copyright 2008 - 2011 LAPIS Semiconductor Co., Ltd.
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