CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTB20A06KQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • ESD Protected • Pb-free & Halogen-free package Symbol BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=6A RDS(ON)@VGS=4.5V, ID=6A 60V 6.3A 5.0A 17 mΩ(typ) 20 mΩ(typ) Outline MTB20A06KQ8 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB20A06KQ8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB20A06KQ8 CYStek Product Specification Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Symbol VDS VGS TA=25°C, VGS=10V TA=70°C, VGS=10V ID Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=1mH, ID=6A, VDD=15V IDM IAS EAS Power Dissipation for Dual Operation PD Power Dissipation for Single Operation Operating Junction and Storage Temperature Tj, Tstg Limits 60 ±20 6.3 5.0 40 6 18 (Note 4) 2 1.6 (Note 2) 0.9 (Note 3) -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, dual Thermal Resistance, Junction-to-ambient, max , single operation Symbol Rth,j-c Rth,j-a Value 40 62.5 78 135 Unit (Note 2) °C/W (Note 3) Note : 1.Pulse width limited by maximum junction temperature. 2. Surface mounted on 1 in2 pad of 2 oz copper, t≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. 4. 100% tested by conditions of L=1mH, IAS=3A, VGS=10V, VDD=15V. Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss MTB20A06KQ8 Min. Typ. Max. 60 1.0 - 15 17 20 2.5 ±10 1 25 23 30 - 18.5 1.9 6.5 714 116 58 - Unit V S μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=6A VGS=±16V VDS =60V, VGS =0V VDS =48V, VGS =0V, Tj=85°C VGS =10V, ID=6A VGS =4.5V, ID=6A nC ID=6.3A, VDS=48V, VGS=10V pF VGS=0V, VDS=30V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 3/9 Characteristics (Cont. Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic 8.6 td(ON) *1, 2 17.6 tr *1, 2 ns 39.8 td(OFF) *1, 2 20 tf *1, 2 Source-Drain Diode Ratings and Characteristics IS *1 6 A ISM *3 24 VSD *1 0.82 1.2 V trr 14 ns Qrr 10 nC Test Conditions VDS=30V, ID=1A, VGS=10V, RG=6Ω IS=6A, VGS=0V IF=6A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB20A06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 35 BVDSS, Normalized Drain-Source Breakdown Voltage 40 4V 30 10V,9V,8V,7V,6V,5V,4.5V 25 3.5V 20 15 10 VGS=3V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 5 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=4V 1.0 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=10V 10 0.2 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 100 90 ID=6A 80 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 70 60 50 40 30 20 10 0 0 MTB20A06KQ8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 2.0 VGS=10V, ID=6A RDS(ON) @Tj=25°C : 17mΩ typ. 1.6 1.2 0.8 VGS=4.5V, ID=6A RDS(ON) @Tj=25°C : 20mΩ typ. 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss f=1MHz 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) 1.2 ID=1mA 1.0 0.8 0.6 ID=250μA 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 10 1 VDS=5V Pulsed Ta=25°C 0.1 VDS=30V 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 VDS=15V 6 4 VDS=48V 2 ID=6.3A 0.01 0.001 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) 18 20 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 8 100 RDS(ON) Limited 10 ID, Maximum Drain Current(A) ID, Drain Current(A) 2 100μs 1ms 1 10ms TA=25°C, Tj=150°C VGS=10V,RθJA=78°C/W Single Pulse 0.1 100ms 1s DC 7 6 5 4 3 2 TA=25°C,RθJA=78°C/W,VGS=10V 1 0 0.01 0.01 MTB20A06KQ8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics 40 200 VDS=10V 35 TJ(MAX) =150°C TA=25°C RθJA=78°C/W 160 30 25 Power (W) ID, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 20 15 10 120 80 40 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 6 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB20A06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB20A06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB20A06KQ8 CYStek Product Specification Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name B20A 06K Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20A06KQ8 CYStek Product Specification