HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability IL(RMS) N07 N06 N07 N06 70 60 70 60 V V V V ±20 ±30 V V Terminal current limit 200 180 100 A A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 600 100 A A EAR EAS TC = 25°C TC = 25°C 30 2 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 200N06/200N07 180N07 TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque 520 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ t = 1 min t=1s 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. Weight Symbol 30 Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS (th) VDS = VGS, ID = 8 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 • ID25 200N06/200N07 Pulse test, t £ 300 ms, duty cycle d £ 2 % 180N07 60 70 2 TJ = 25°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 ID25 RDS(on) 60 V 70 V 70 V 200 A 180 A 200 A 6 mW 7 mW 6 mW trr £ 250 ns Test Conditions VDSS VDSS 4 V V V ±200 nA 400 2 mA mA 6 mW 7 mW miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 97533A (9/99) 1-4 IXFN 200N06 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM IXFN 180N07 IXFN 200N07 80 S 9000 pF 4000 pF 2400 pF 30 ns 60 ns M4 screws (4x) supplied 100 ns Dim. 60 ns 480 Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 60 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 240 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.24 0.05 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A A Repetitive; pulse width limited by TJM 600 A IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.7 V 200N06/200N07 180N07 250 ns 150 © 2000 IXYS All rights reserved Millimeter Min. Max. A B 200 180 IF = 25 A -di/dt = 100 A/ms, VR = 50 V miniBLOC, SOT-227 B 0.7 mC 9 A IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 200N06 600 TJ = 25OC 150 125 ID - Amperes TJ=25OC VGS=10V 9V 8V 7V 6V 100 5V 75 VGS=10V 9V 8V 500 ID - Amperes 175 IXFN 180N07 IXFN 200N07 50 400 7V 300 6V 200 5V 100 25 0 0.0 0.5 1.0 1.5 0 2.0 0 1 2 3 4 VDS - Volts 7 8 9 10 Figure 2. Extended Output Characteristics 600 Transconductance - Siemens 80 VDS > 4RDS(ON) 500 TJ=150OC ID - Amperes 6 VDS - Volts Figure 1. Output Characteristics at 25OC 400 TJ=25OC 300 TJ=100OC 200 100 0 2 4 6 8 10 TJ = 25oC VGS=10V 70 60 TJ = 100oC 50 40 TJ = 150oC 30 20 10 0 12 0 100 200 VGS - Volts 300 400 500 600 IC - Amperes Figure 3. Admittance Curves Figure 4. 1.4 Transconductance vs. Drain Current 2.25 TJ = 25oC 2.00 1.3 RDS(ON) - Normalized RDS(ON) - Normalized 5 1.2 1.1 VGS = 10V 1.0 VGS = 15V 0.9 ID = 75A VGS = 10V 1.75 1.50 1.25 1.00 0.75 0.8 0 100 200 300 400 500 ID - Amperes Figure 5. RDS(on) normalized to 0.5 ID25 value © 2000 IXYS All rights reserved 600 0.50 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees C Figure 6. Normalized RDS(on) vs. Junction Temperature 3-4 IXFN 200N06 16 250 14 IXFN200 VDS = 40V ID = 38A IG = 1mA 200 ID - Amperes 12 VGS - Volts IXFN 180N07 IXFN 200N07 10 8 6 4 IXFN180 150 (Terminal current limit) 100 50 2 0 0 100 200 300 400 500 600 0 -50 700 -25 0 25 50 75 100 125 150 O Gate Charge - nCoulombs Case Temperature - C Figure 7. Gate Charge Figure 8. Drain Current vs. Case Temperature 12000 400 TJ =150OC F = 1MHz 300 Ciss 8000 ID - Amperes p 10000 6000 p Coss 4000 TJ =25OC O TJ =150 C 100 Crss 2000 200 TJ =100OC 0 0 10 20 30 40 0 0.0 0.5 VDS - Volts 1.0 1.5 2.0 VSD - Volts Figure 9. Capacitance Curves Figure 10. Source-Drain Voltage vs. Source Current Thermal Response - K/W 100 10-1 10-2 10-3 10-2 10-1 100 Time - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4