AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS 30V 55A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS=4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche Energy L=0.05mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0 : Aug 2012 22 t ≤ 10s Steady-State Steady-State A IAS 35 A EAS 31 mJ 35.5 W 14 5.5 PDSM TA=70°C A 17.5 PD TC=100°C V 135 IDSM TA=70°C ±20 35 IDM TA=25°C Continuous Drain Current Units V 55 ID TC=100°C Maximum 30 W 3.6 TJ, TSTG -55 to 150 °C Symbol Typ Max Units RθJA 18 40 2.8 22 55 3.5 °C/W °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AON6536 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 135 TJ=55°C ±100 nA 2.0 2.5 V 5.6 7 8.6 11 10 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.8 gFS Forward Transconductance VDS=5V, ID=20A 58 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 5 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 0.6 mΩ mΩ S 1 V 40 A 1210 pF 210 pF 100 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19.5 30 nC Qg(4.5V) Total Gate Charge 9 15 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge 4.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 21.5 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Aug 2012 www.aosmd.com Page 2 of 6 AON6536 CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 4.5V 50 6V 10V 40 ID(A) 40 ID (A) VDS=5V 3.5V 50 30 125°C 3V 20 30 20 10 10 VGS=2.5V 0 25°C 0 0 1 2 3 4 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.5 3.5 4.5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 12 Normalized On-Resistance 1.8 10 VGS=4.5V RDS(ON) (mΩ Ω) 1.5 8 6 VGS=10V 4 VGS=10V ID=20A 1.6 1.4 17 5 2 VGS=4.5V 10 1.2 ID=20A 1 2 0 5 10 15 20 25 0.8 30 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 1.0E+00 9 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 125°C 6 25°C 1.0E-02 1.0E-03 25°C 3 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: Aug 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6536 CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 VDS=15V ID=20A 1500 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 900 600 Coss 300 0 Crss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 100.0 10.0 100us 1ms 10ms DC 1.0 0.1 TJ(Max)=150°C TC=25°C 160 10µs RDS(ON) limited Power (W) ID (Amps) 1200 120 80 40 TJ(Max)=150°C TC=25°C 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: Aug 2012 www.aosmd.com Page 4 of 6 AON6536 CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C 10 TA=125°C 30 25 20 15 10 5 0 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 10000 60 TA=25°C 1000 40 Power (W) Current rating ID(A) 50 30 100 20 10 10 1 0 0 25 50 75 100 125 0.00001 150 0.001 0.1 10 1000 TCASE (° °C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Zθ JA Normalized Transient Thermal Resistance 10 1 RθJA=55°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: Aug 2012 www.aosmd.com Page 5 of 6 AON6536 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: Aug 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6