POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF1047 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 1400 1305 16 30 V A kA µs mag 06 - ISSUE : 06 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1400 V V RSM Non-repetitive peak reverse voltage 125 1500 V V DRM Repetitive peak off-state voltage 125 1400 V I RRM Repetitive peak reverse current V=VRRM 125 100 mA I DRM Repetitive peak off-state current V=VDRM 125 100 mA A CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 1305 I T (AV) Mean on-state current 180° sin, 1 kHz,T h=55°C, double side cooled 1230 A I TSM Surge on-state current, non repetitive sine wave, 10 ms 16 kA I² t I² t without reverse voltage V T On-state voltage On-state current = V T(TO) T r 125 1280 x1E3 2000 A A²s 25 2 V Threshold voltage 125 1,32 V On-state slope resistance 125 0,230 mohm From 75% VDRM up to 2000 A, gate 20V 10 ohm 125 500 A/µs SWITCHING di/dt Critical rate of rise of on-state current, min dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 600 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0,6 µs tq Circuit commutated turn-off time 125 30 µs 125 650 µC di/dt = dV/dt = Q rr Reverse recovery charge A/µs, I= 1000 I = 800 A 20 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A I rr Peak reverse recovery current 230 A I H Holding current, typical VD=5V, gate open circuit 25 80 mA I L Latching current, typical VD=5V, tp=30µs 25 230 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation 25 150 W P G(AV) Average gate power dissipation 25 3 W R th(j-h) Thermal impedance, DC 26 °C/kW T j Operating junction temperature Pulse width 100 µs MOUNTING F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 14.0 / 17.0 kN 500 tq code ORDERING INFORMATION : ATF1047 S 14 M standard specification tq code VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF1047 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 06 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1400 1000 A 1200 500 A Qrr [µC] 1000 800 250 A 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 800 1000 A 500 A 600 Irr [A] 250 A 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF1047 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 06 SURGE CHARACTERISTIC Tj = 125 °C 4500 18 4000 16 3500 14 3000 12 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 2500 2000 10 8 1500 6 1000 4 500 2 0 0 0,6 1,1 1,6 2,1 2,6 1 On-state Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0,001 0,01 0,1 1 10 100 t[s] Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO S.p.A reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100