ON MMSZ5236ET1G Zener voltage regulators 500 mw sodâ 123 surface mount Datasheet

MMSZ52xxET1G Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Features









500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
1
xxx M G
G
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Max
Units
Peak Power Dissipation @ 20 ms (Note 1)
@ TL  25C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 3) @ TL = 75C
Derated above 75C
PD
Thermal Resistance, (Note 2)
Junction−to−Ambient
RqJA
Thermal Resistance, (Note 2)
Junction−to−Lead
RqJL
Junction and Storage Temperature Range
TJ, Tstg
500
6.7
mW
mW/C
ORDERING INFORMATION
Package
Shipping†
MMSZ52xxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SZMMSZ52xxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ52xxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Device
C/W
340
C/W
150
−55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 8
1
Publication Order Number:
MMSZ5221ET1/D
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
I
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 4 and 5)
VZ (V)
Zener Impedance (Note 6)
Leakage Current
@ IZT
ZZT @ IZT
Max
mA
W
W
mA
mA
V
2.4
2.52
20
30
1200
0.25
100
1
2.57
2.7
2.84
20
30
1300
0.25
75
1
CA6
3.14
3.3
3.47
20
28
1600
0.25
25
1
CA8
3.71
3.9
4.10
20
23
1900
0.25
10
1
MMSZ5229ET1G
CA9
4.09
4.3
4.52
20
22
2000
0.25
5
1
MMSZ5231ET1G
CB2
4.85
5.1
5.36
20
17
1600
0.25
5
2
MMSZ5232ET1G
CB3
5.32
5.6
5.88
20
11
1600
0.25
5
3
MMSZ5234ET1G
CB5
5.89
6.2
6.51
20
7
1000
0.25
5
4
MMSZ5235ET1G
CB6
6.46
6.8
7.14
20
5
750
0.25
3
5
MMSZ5236ET1G
CB7
7.13
7.5
7.88
20
6
500
0.25
3
6
MMSZ5237ET1G
CB8
7.79
8.2
8.61
20
8
500
0.25
3
6.5
MMSZ5240ET1G
CC2
9.50
10
10.50
20
17
600
0.25
3
8
MMSZ5242ET1G
CC4
11.40
12
12.60
20
30
600
0.25
1
9.1
MMSZ5243ET1G
CC5
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
MMSZ5244ET1G
CC6
13.30
14
14.70
9.0
15
600
0.25
0.1
10
MMSZ5245ET1G
CC7
14.25
15
15.75
8.5
16
600
0.25
0.1
11
MMSZ5246ET1G
CC8
15.20
16
16.80
7.8
17
600
0.25
0.1
12
MMSZ5248ET1G
CD1
17.10
18
18.90
7.0
21
600
0.25
0.1
14
MMSZ5250ET1G
CD3
19.00
20
21.00
6.2
25
600
0.25
0.1
15
MMSZ5252ET1G
CD5
22.80
24
25.20
5.2
33
600
0.25
0.1
18
Device
Marking
Min
Nom
MMSZ5221ET1G
CA1
2.28
MMSZ5223ET1G
CA3
MMSZ5226ET1G
MMSZ5228ET1G
Device*
ZZK @ IZK
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
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2
IR @ VR
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 4 and 5)
VZ (V)
Zener Impedance (Note 6)
@ IZT
ZZT @ IZT
ZZK @ IZK
Leakage Current
IR @ VR
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
MMSZ5253ET1G
CD6
23.75
25
26.25
5.0
35
600
0.25
0.1
19
MMSZ5254ET1G
CD7
25.65
27
28.35
4.6
41
600
0.25
0.1
21
MMSZ5255ET1G
CD8
26.60
28
29.40
4.5
44
600
0.25
0.1
21
MMSZ5256ET1G
CD9
28.50
30
31.50
4.2
49
600
0.25
0.1
23
MMSZ5257ET1G
CE1
31.35
33
34.65
3.8
58
700
0.25
0.1
25
MMSZ5258ET1G
CE2
34.20
36
37.80
3.4
70
700
0.25
0.1
27
MMSZ5259ET1G
CE3
37.05
39
40.95
3.2
80
800
0.25
0.1
30
MMSZ5262ET1G
CE6
48.45
51
53.55
2.5
125
1100
0.25
0.1
39
MMSZ5263ET1G
CE7
53.20
56
58.80
2.2
150
1300
0.25
0.1
43
Device*
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
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3
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
qVZ, TEMPERATURE COEFFICIENT (mV/C)
qVZ, TEMPERATURE COEFFICIENT (mV/C)
TYPICAL CHARACTERISTICS
8
100
7
TYPICAL TC VALUES
FOR MMSZ5221BT1G SERIES
6
5
4
VZ @ IZT
3
2
1
0
−1
−2
−3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
TYPICAL TC VALUES
FOR MMSZ5221BT1G SERIES
VZ @ IZT
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55C to +150C)
Figure 2. Temperature Coefficients
(Temperature Range − 55C to +150C)
1000
Ppk, PEAK SURGE POWER (WATTS)
PD, POWER DISSIPATION (WATTS)
1.2
1.0
PD versus TL
0.8
0.6
100
PD versus TA
0.4
0.2
0
0
25
RECTANGULAR
WAVEFORM, TA = 25C
50
75
100
T, TEMPERATURE (C)
125
10
1
150
Figure 3. Steady State Power Derating
1
1000
1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
IZ = 1 mA
100
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
100
5 mA
20 mA
10
10
150C
1
10
100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
ZZT, DYNAMIC IMPEDANCE (W)
0.1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
75C 25C
0C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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4
1.1
1.2
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
TA = 25C
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
IR, LEAKAGE CURRENT (mA)
1000
100
BIAS AT
50% OF VZ NOM
10
1
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
1000
100
10
1
+150C
0.1
0.01
0.001
+ 25C
0.0001
−55C
0.00001
0
10
Figure 7. Typical Capacitance
IZ, ZENER CURRENT (mA)
10
1
0.1
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
100
30
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
10
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
IZ, ZENER CURRENT (mA)
TA = 25C
TA = 25C
0
80
Figure 8. Typical Leakage Current
100
100
0.01
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
40
60
t, TIME (ms)
Figure 11. 8  20 ms Pulse Waveform
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5
80
90
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 
0
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSZ5221ET1/D