NCS2540 Triple 750 MHz Voltage Feedback Op Amp with Enable Feature NCS2540 is a triple 750 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. http://onsemi.com MARKING DIAGRAM Features • • • • • • • • −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 750 MHz Typ Slew Rate 1700 V/ms Supply Current 13 mA/amp Input Referred Voltage Noise 5.0 nV/ ǸHz THD −64 dBc (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 100 mA Enable Pin Available This is a Pb−Free Device Applications • Line Drivers • Radar/Communication Receivers 16 1 2540 = NCS2540 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TSSOP−16 PINOUT NORMALIZED GAIN (dB) 3 0 VOUT = 2.0 VPP −3 VOUT = 1.0 VPP −6 VOUT = 0.5 VPP −9 −12 −15 1k NCS 2540 ALYWG G TSSOP−16 DT SUFFIX CASE 948F Gain = +2 VS = ±5V RF = 150W RL = 150W 10k 100k 1 − 16 VCC1 +IN1 2 + 15 OUT1 VEE1 3 −IN2 4 − 13 VCC2 + 12 OUT2 14 EN +IN2 5 VEE2 6 −IN3 7 − 8 + +IN3 11 VCC3 10 OUT3 9 VEE3 (Top View) 10M 100M 1M FREQUENCY (Hz) 1G 10G ORDERING INFORMATION Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 © Semiconductor Components Industries, LLC, 2006 Package Shipping† NCS2540DTG TSSOP−16 (Pb−Free) 96 Units/Rail NCS2540DTR2G TSSOP−16 (Pb−Free) 2500 Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. May, 2006 − Rev. 1 −IN1 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NCS2540/D NCS2540 PIN FUNCTION DESCRIPTION Pin Symbol Function 10, 12, 15 OUTx Output Equivalent Circuit VCC ESD OUT VEE 3, 6, 9 VEE Negative Power Supply 2, 5, 8 +INx Non−inverted Input VCC ESD ESD −IN +IN VEE 1, 4, 7 −INx Inverted Input 11, 13, 16 VCC Positive Power Supply See Above 14 EN Enable VCC ESD EN VEE ENABLE PIN TRUTH TABLE Enable High Low* Disabled Enabled *Default open state VCC −IN +IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2540 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV 200 V 1.0 kV Moisture Sensitivity (Note 1) Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 Vdc Input Voltage Range VI vVS Vdc Input Differential Voltage Range VID vVS Vdc Output Current IO 100 mA Maximum Junction Temperature (Note 2) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW RqJA 179 °C/W Thermal Resistance, Junction−to−Air Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION MAXIMUM POWER DISSIPATION (mW) The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. 1400 1200 1000 800 600 400 200 0 −50 −25 0 75 100 25 50 AMBIENT TEMPERATURE (C) 125 150 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2540 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 750 350 AV = +2.0 40 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.07 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.01 ° Slew Rate AV = +2.0, Vstep = 2.0 V 1700 V/ms Settling Time 0.1% AV = +2.0, Vstep = 2.0 V 10 (10%−90%) AV = +2.0, Vstep = 2.0 V TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time 2.0 ns tON Turn−on Time 20 ns tOFF Turn−off Time 40 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −64 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −65 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −75 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 40 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 2.0 Vp−p 65 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 5.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz 4.0 pAń ǸHz http://onsemi.com 4 NCS2540 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −10 0 +10 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage (Note 3) Input Offset Voltage Temperature Coefficient 6.0 Input Bias Current VO = 0 V "3.2 Input Bias Current Temperature Coefficient VO = 0 V "40 VIH Input High Voltage (Enable) (Note 3) VIL Input Low Voltage (Enable) (Note 3) mV/°C "20 mA nA/°C 3.0 V 1.0 V INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 3) Common Mode Rejection Ratio (Note 3) (See Graph) "3.0 "3.2 V 40 50 dB RIN Input Resistance 4.5 MW CIN Differential Input Capacitance 1.0 pF OUTPUT CHARACTERISTICS ROUT 0.1 W VO Output Resistance Output Voltage Range "3.0 "4.0 V IO Output Current "50 "100 mA 10 V POWER SUPPLY VS Operating Voltage Supply IS,ON Power Supply Current − Enabled per amplifier (Note 3) IS,OFF Power Supply Current − Disabled per amplifier PSRR Power Supply Rejection Ratio (Note 3) Crosstalk 5.0 (See Graph) Channel to Channel, f = 5 MHz 3. Guaranteed by design and/or characterization. http://onsemi.com 5 40 13 17 mA 0.1 0.3 mA 56 dB 85 dB NCS2540 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p 550 200 AV = +2.0 35 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.07 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.02 ° Slew Rate AV = +2.0, Vstep = 1.0 V 900 V/ms Settling Time 0.1% AV = +2.0, Vstep = 1.0 V 10 (10%−90%) AV = +2.0, Vstep = 1.0 V TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time 1.7 ns tON Turn−on Time 20 ns tOFF Turn−off Time 40 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −60 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −65 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −63 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 0.5 Vp−p 35 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 1.0 Vp−p 63 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 5.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz 4.0 pAń ǸHz http://onsemi.com 6 NCS2540 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −10 0 +10 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage (Note 4) Input Offset Voltage Temperature Coefficient 6.0 Input Bias Current VO = 0 V "3.2 Input Bias Current Temperature Coefficient VO = 0 V "40 VIH Input High Voltage (Enable) (Note 4) VIL Input Low Voltage (Enable) (Note 4) mV/°C "20 mA nA/°C 1.5 V 0.5 V INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 4) Common Mode Rejection Ratio (Note 4) (See Graph) "1.1 "1.5 V 40 50 dB RIN Input Resistance 4.5 MW CIN Differential Input Capacitance 1.0 pF OUTPUT CHARACTERISTICS ROUT 0.1 W VO Output Resistance Output Voltage Range "1.1 "1.5 V IO Output Current "50 "100 mA 5.0 V POWER SUPPLY VS Operating Voltage Supply IS,ON Power Supply Current − Enabled per amplifier IS,OFF Power Supply Current − Disabled per amplifier PSRR Power Supply Rejection Ratio (Note 4) 5.0 (See Graph) Crosstalk 40 Channel to Channel, f = 5 MHz 4. Guaranteed by design and/or characterization. VIN + − VOUT RL RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 150 kW, RL = 150 W) http://onsemi.com 7 11 17 mA 0.1 0.3 mA 56 dB 85 dB NCS2540 3 12 VOUT = 0.5 VPP 9 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 0 VOUT = 2.0 VPP −3 VOUT = 1.0 VPP −6 VOUT = 0.5 VPP −9 Gain = +2 VS = ±5V RF = 150W RL = 150W −12 −15 1k 10k 100k 6 3 0 −3 −6 −9 −12 −15 1G 10M 100M 1M FREQUENCY (Hz) −18 10k 10G Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 Gain = +2 VOUT = 1.0 VPP −6 Gain = +2 VOUT = 2.0 VPP −9 −12 VS = ±5V RF = 150W RL = 150W −15 100k 6 1G 10G 10M 100M FREQUENCY (Hz) 0 −3 −6 −9 −12 −18 10k 1G Gain = +1 3 −15 1M 1M 10M 100M FREQUENCY (Hz) 9 0 −3 100k VOUT = 0.7 VPP 12 Gain = +1 VOUT = 1.0 VPP 3 Gain = +1 VS = ±5V RF = 150W RL = 150W Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 6 VOUT = 1.0 VPP Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W 100k Gain = +2 10M 100M 1M FREQUENCY (Hz) 1G Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V VS = ±5V Figure 10. Large Signal Step Response Vertical: 1 V/div Horizontal: 3 ns/div Figure 9. Small Signal Step Response Vertical: 20 mV/div Horizontal: 3 ns/div http://onsemi.com 8 10G NCS2540 −40 −50 −55 THD −60 HD2 −65 HD3 −70 −50 −55 −60 HD2 −65 HD3 −75 1 10 FREQUENCY (MHz) −80 100 0 0.5 1 50 2 2.5 VOUT (VPP) 4 3.5 3 4.5 −20 VS = ±5V −25 40 VS = ±5V CMRR (dB) −30 30 20 −35 −40 −45 10 0 −50 10 100 1k 10k −55 10k 1M 100k FREQUENCY (Hz) 0.08 DIFFERENTIAL GAIN (%) VS = ±5V −20 −30 −40 −50 −60 −70 10k 10M 100M Figure 14. CMRR vs. Frequency 0 −10 1M FREQUENCY (Hz) Figure 13. Input Referred Voltage Noise vs. Frequency PSRR (dB) 1.5 Figure 12. THD, HD2, HD3 vs. Output Voltage Figure 11. THD, HD2, HD3 vs. Frequency VOLTAGE NOISE (nV/√Hz) THD −70 −75 −80 Gain = +2 Freq = 5 MHz VS = ±5V RF = 150W RL = 150W −45 DISTORTION (dB) −45 DISTORTION (dB) −40 Gain = +2 VOUT = 2 VPP VS = ±5V RF = 150W RL = 150W 20MHz Gain = +2 0.06 V = ±5V S RF = 150W 0.04 RL = 150W 10MHz 0.02 3.58MHz 0 −0.02 4.43MHz −0.04 −0.06 100k 1M 10M −0.08 −0.8 100M FREQUENCY (Hz) Figure 15. PSRR vs. Frequency −0.6 −0.4 0.2 0.4 −0.2 0 OFFSET VOLTAGE (V) Figure 16. Differential Gain http://onsemi.com 9 0.6 0.8 NCS2540 14 20MHz 12 10MHz 0.01 3.58MHz 0 4.43MHz −0.01 Gain = +2 VS = ±5V −0.02 RF = 150W RL = 150W −0.03 −0.8 −0.6 −0.4 −40°C 11 10 9 8 7 −0.2 0 0.4 0.2 OFFSET VOLTAGE (V) 0.6 6 0.8 4 6 7 8 9 10 11 Figure 18. Supply Current Per Amplifier vs. Power Supply (Enabled) 8 0.14 OUTPUT VOLTAGE (VPP) 0.12 0.10 85°C 0.08 25°C −40°C 0.06 0.04 7 25°C 85°C 6 5 −40°C 4 3 0.02 0.00 4 2 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 4 Figure 19. Supply Current Per Amplifier vs. Temperature (Disabled) 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 12 VS = ±5V 10 1 0.1 100k 1M 10M 100M 1G 6 3 0 −3 −6 −12 10k 10G 10pF 9 −9 0.01 10k 5 Figure 20. Output Voltage Swing vs. Supply Voltage NORMALIZED GAIN (dB) 100 OUTPUT RESISTANCE (W) 5 POWER SUPPLY VOLTAGE (V) Figure 17. Differential Phase CURRENT (mA) 85°C 25°C 13 0.02 CURRENT (mA) DIFFERENTIAL PHASE (°) 0.03 100pF Gain = +2 VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W 100k 47pF 1M 10M 100M 1G 10G FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. Output Resistance vs. Frequency Figure 22. Frequency Response vs. Capacitive Load http://onsemi.com 10 NCS2540 Output waveform: Squarewave, 32 MHz, 600 mVPP EN VS = ±5V EN VS = ±5V OUT OUT Output waveform: Squarewave, 32 MHz, 600 mVPP Figure 23. Turn ON Time Delay Vertical: 500 mV/div (Enable), 200 mV/div (Output) Horizontal: 5 ns/div Figure 24. Turn OFF Time Delay Vertical: 500 mV/div (Enable), 200 mV/div (Output) Horizontal: 10 ns/div 0 6 −30 −40 NORMALIZED GAIN (dB) −20 CROSSTALK (dBc) Channel 1 Gain = +2 VS = ±5V RF = 150W RL = 150W −10 Channel 3 −50 −60 −70 −80 −90 −100 1 10 100 FREQUENCY (MHz) 2 Figure 25. Crosstalk vs Frequency (Crosstalk measured on Channel 2 with input signal on Channel 1 and 3) CH3 0 −2 −4 −6 10k 1000 CH2 4 Gain = +2 VS = ±5V RF = 150W RL = 150W 100k CH1 10M 100M 1M FREQUENCY (Hz) 1G 10G Figure 26. Channel Matching (dB) vs Frequency http://onsemi.com 11 NCS2540 Printed Circuit Board Layout Techniques to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and –IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. VCC Internal Circuitry External Pin ESD Protection All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 27). These diodes provide moderate protection VEE Figure 27. Internal ESD Protection http://onsemi.com 12 NCS2540 PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE A 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S K ÇÇÇ ÉÉ ÇÇÇ ÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. 8 1 N 0.15 (0.006) T U S 0.25 (0.010) A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. M N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D G H DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ DETAIL E ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 13 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCS2540/D