UTC BAV99L-AN3-R High conductance ultra fast diode Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BAV99
DIODE
HIGH CONDUCTANCE ULTRA
FAST DIODE
3
3
1
2
EQUIVALENT
3
K
A
A
K
2
SOT-323
SOT-23
3
6
2
1
5
4
1
SOT-523
1
1
2
2 3
SOT-363
For 3 Pin Package
5
6
1
*Pb-free plating product number: BAV99L
4
3
2
For 6 Pin Package
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BAV99-AE3-R
BAV99L-AE3-R
BAV99-AL3-R
BAV99L-AL3-R
BAV99-AN3-R
BAV99L-AN3-R
BAV99-AL6-R
BAV99L-AL6-R
Package
SOT-23
SOT-323
SOT-523
SOT-363
1
K1
K1
K1
A1
2
A2
A2
A2
K1
Pin Assignment
3
4
5
K2A1
K2A1
K2A1
A2K2 A2 K2
6
A1K1
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: A: Anode K: Cathode
BAV99L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-523, AN3: SOT-523,
AL 6: SOT-363
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
V99
For 3 Pin
Lead Plating
V99
Lead Plating
For 6 Pin
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R601-005,B
BAV99
DIODE
ABSOLUTE MAXIMUM RATINGS* (Ta = 25℃, unless otherwise specified.)
PARAMETER
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak
Pulse width = 1.0 second
Forward Surge Current Pulse width = 1.0 microsecond
SOT-23
Total Device Dissipation
SOT-363
SYMBOL
WIV
IF(AV)
IFM
IFRM
IFSM
PD
RATINGS
70
200
600
700
1.0
2.0
350
200
UNIT
V
mA
mA
mA
A
mW
mW
Junction Temperature
TJ
+125
℃
Storage Temperature
TSTG
-40 ~ +150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note: 1. These ratings are based on a maximum junction temperature of 150°C
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient
SYMBOL
SOT-23
SOT-363
θJA
RATINGS
357
625
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified.)
PARAMETER
Breakdown Voltage
Maximum Instantaneous Forward
Voltage
Peak Forward Voltage
Maximum Instantaneous Reverse
Current
Diode Capacitance
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VR
IR = 100µA
IF = 1.0mA
IF = 10mA
VFM
IF = 50mA
IF = 150mA
VSM
IF = 10mA, tR = 20nS
VR = 70V
IRM
VR = 25V, Ta = 150°C
VR = 70V, Ta = 150°C
CO
VR = 0, f = 1.0MHz
IF = IR = 10mA, IRR = 1.0mA
tRR
RL = 100Ω
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
70
TYP
MAX
715
855
1.0
1.25
1.75
2.5
30
50
1.5
6.0
UNIT
V
mV
mV
V
V
V
µA
pF
ns
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QW-R601-005,B
BAV99
DIODE
TYPICAL CHARACTERISTICS
Reverse Current vs. Reverse Voltage
IR - 10 ~ 100 V
Reverse Voltage vs. Reverse Current
BV - 1.0 ~ 100 uA
300 Ta = 25℃
Ta = 25℃
Reverse Current, IR (nA)
Reverse Voltage, VR (V)
150
150
150
150
150
1
250
200
150
100
50
0
10
2
3
5
10
20 30 50
2
100
Reverse Current, IR (uA)
70
100
Forward Voltage vs. Forward Current
VF – 0.1 ~ 10 mA
725
700
Forward Voltge, VF (mV)
Forward Voltage, VF (mV)
50
Reverse Voltage, V R (V)
Ta = 25℃
450
30
GENERAL RULE : The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Forward Voltage vs. Forward Current
VF - 1.0 ~ 100 uA
485
3 20
400
350
300
Ta = 25℃
650
600
550
500
250
225
1
2
3
5
10
20 30 50
100
450
0.1
0.2 0.3 0.5
Forward Current, IF (uA)
1.3
Ta = 25℃
1.2
1
3
5
10
Capacitance vs. Reverse Voltage
VR - 0.0 ~ 15 V
Capacitance (pF)
Forward Voltage, VF (V)
1.4
2
Forward Current, IF (mA)
Forward Voltage vs. Forward Current
VF - 1.0 ~ 800 mA
1.5
1
Ta = 25℃
1.2
1.1
0.8
0.6
10
20 30
50
100
200 300 500
Forward Current, IF (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
0
2
4
6
8
10
12
14 15
Reverse Voltage (V)
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QW-R601-005,B
BAV99
DIODE
TYPICAL CHARACTERISTICS(Cont.)
Average Rectified Current (Io) & Forward
Current (IF) versus Ambient Temperature (Ta)
Reverse Recovery Time vs. Reverse
Current TRR - IR 10 mA vs. 60 mA
500
Ta = 25℃
Power Dissipation, PD (mW)
Reverse Recovery (nS)
4
3.5
3
2.5
2
1.5
1
10
20
30
40
50
60
Reverse Current (mA)
400
300
200
100
0
0
IR
-F
o rw
ar d
Cu
rre
nt
S
Io - A
vera
ge R
e ctif ie
dC
te a
dy
Sta
t
urr en
t
e-
mA
- mA
50
100
150
Ambient Temperture, Ta (℃)
IRR (Reverse Recovery Current ) = 1.0 mA - Rloop = 100Ω
Power Derating Curve
Power Dissipation, PD (mW)
500
400
300
SOT-23
200
100
0
0
SOT-363
50
100
150
200
Average Temperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-005,B
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