DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC501 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 17 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor JC501 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 NPN transistor in a TO-92; SOT54 plastic package. PNP complement: JA101. 2 2 3 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 27 Tamb ≤ 25 °C 2 V Philips Semiconductors Product specification NPN general purpose transistor JC501 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS − TYP. − MAX. UNIT 15 nA ICBO collector cut-off current IE = 0; VCB = 45 V; Tj = 125 °C − − 4 µA IEBO emitter cut-off current IC = 0; VEB = 6 V − − 100 nA hFE DC current gain IC = 1 mA; VCE = 5 V 135 − 600 hFE DC current gain IC = 1 mA; VCE = 5 V JC501P 135 − 270 JC501Q 200 − 400 JC501R 300 − 600 VCEsat IE = 0; VCB = 45 V MIN. collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 200 mV IC = 100 mA; IB = 5 mA − − 600 mV IC = 10 mA; IB = 0.5 mA − − 830 mV VBEsat base-emitter saturation voltage IC = 100 mA; IB = 5 mA − − 1.06 V VBE base-emitter voltage IC = 2 mA; VCE = 5 V 550 − 700 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 6 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz − 130 − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB 1999 Apr 27 3 Philips Semiconductors Product specification NPN general purpose transistor JC501 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 27 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistor JC501 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 27 5 Philips Semiconductors Product specification NPN general purpose transistor JC501 NOTES 1999 Apr 27 6 Philips Semiconductors Product specification NPN general purpose transistor JC501 NOTES 1999 Apr 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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