CHE1270a98F RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode (Vdet). A reference diode is also available to be used in differential mode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in chip form. RF IN Matching Vdet Vref DC Transmitted power detection (mV) Main Features 10000 ■ Wide frequency range 5-44GHz ■ 30dB dynamic range ■ ESD protected ■ BCB layer protection ■ Chip size: 1.34 x 0.82 x 0.1mm Vdetect= Vref-Vdet (mV) 1000 10GHz 11GHz 12GHz 17GHz 22GHz 27GHz 32GHz 37GHz 40GHz 42GHz 44GHz 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Main Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Dr Dynamic range RL Return Loss Ref. : DSCH1270a2074 - 14 Mar 12 Min 5 30 Typ Max 44 -10 1/8 Unit GHz dB dB Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Main Characteristics Tamb.= +25°C, Vdc = +4.5V Symbol Parameter Min Typ Max Unit Freq Frequency range 5 44 GHz Dr Dynamic range (for Input Power detection) 30 dB IPd Input Power detection -15 15 dBm Voltage detection Vref – Vdet Vdetect 5 2200 mV from IPd_min to IPd_max Return Loss (5 – 10GHz) -4 -3 dB Return Loss (10 – 12GHz) -7 -5 dB Return Loss (12 – 14.5GHz) -8 -6 dB RL Return Loss (14.5 – 42GHz) -8 dB -10 Return Loss (42 – 44GHz) -7 -5 dB Vdc Bias voltage 4.5 V Idc Bias current 50 70 90 µA These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref. Ref. : DSCH1270a2074 - 14 Mar 12 2/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vdc Drain bias voltage 6V V IPdmax Maximum Input Power detection +18 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCH1270a2074 - 14 Mar 12 3/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Typical on wafer Measurements Tamb.= +25°C, Vdc = +4.5V Return Loss versus frequency 0 -2 -4 Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz) Transmitted power detection Vdetect= Vref-Vdet (mV) 10000 12 GHz 17GHz 22GHz 27GHz 32GHz 37GHz 40GHz 42GHz 44GHz 1000 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Ref. : DSCH1270a2074 - 14 Mar 12 4/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Typical on wafer Measurements Tamb.= +25°C, Vdc = +4.5V Transmitted power detection versus frequency @ -15dBm input power 40 Vdetect= Vref-Vdet (mV) 35 30 25 20 15 10 5 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Transmitted power detection versus frequency @ +15dBm input power 2000 1900 Vdetect= Vref-Vdet (mV) 1800 1700 1600 1500 1400 1300 1200 1100 1000 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Ref. : DSCH1270a2074 - 14 Mar 12 5/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Mechanical data Chip thickness: 100µm Chip size: 1.34 x 0.82 x 0.1mm DC Pads Size: 100/100 µm All dimensions are in micrometers Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. Ref. : DSCH1270a2074 - 14 Mar 12 6/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Notes RF IN Matching 27kΩ Ω Vdet 27kΩ Ω Vref DC Recommended external resistors assembly 27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref and Vdet, the external resistor value should be identical on these two ports. For information, a variation of 3% leads around 1mV variation of detected voltage. Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. ESD protections are also implemented on Vdet and Vref accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued. Ref. : DSCH1270a2074 - 14 Mar 12 7/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHE1270a98F 5-44GHz Detector Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHE1270a98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCH1270a2074 - 14 Mar 12 8/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34