Fuji FGW15N120VD Discrete igbt (high-speed v series) 1200v / 15a Datasheet

http://www.fujielectric.com/products/semiconductor/
FGW15N120VD
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 15A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols
VCES
VGES
IC@25
IC@100
ICP
IF@25
IF@100
IFP
Short Circuit Withstand Time
tSC
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics Units
Remarks
1200
V
±20
V
28
A
TC =25°C, Tj =150°C
15
A
TC =100°C, Tj =150°C
30
A
Note *1
30
A
VCE ≤1200V, Tj ≤175°C
26
A
15
A
30
A
Note *1
VCC ≤640V, VGE=15V
10
μs
Tj ≤150°C
155
TC =25°C
W
95
TC =25°C
-40~+175
°C
-55~+175
°C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 50μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 1200V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 15mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 15A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Forward Voltage Drop
VF
Diode Reverse Recovery Time
trr1
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 15A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj =25°C
IF=15A
Tj =175°C
VCC =30V
IF = 1.5A
-di/dt=200A/µs
VCC =600V
IF=15A
-diF/dt=200A/µs
Tj =25°C
1
Tj =25°C
Tj =175°C
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
1200
250
2
200
6.0
6.5
7.0
1.85
2.4
2.4
1015
58
47
-
Unit
V
µA
mA
nA
V
V
pF
-
150
-
nC
-
27
20
180
45
1.1
-
-
0.8
-
-
28
22
245
75
1.7
-
-
1.4
-
-
1.7
1.8
2.21
-
V
V
-
56
73
ns
-
0.26
-
µs
-
0.85
-
µC
ns
mJ
ns
mJ
FGW15N120VD
Items
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Symbols
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
Characteristics
min.
typ.
max.
Conditions
VCC =600V
IF=15A
-diF/dt=200A/µs
Tj =175°C
Thermal resistance
Items
Symbols
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
2
min.
-
Unit
-
0.65
-
µs
-
2.2
-
µC
Characteristics
typ.
-
max.
50
0.962
1.563
Unit
°C/W
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =600V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
50
100
40
80
Switching frequency fs [kHz]
Collector current IC [A]
G
30
Tj≤175℃
20
CC
C
60
40
20
10
0
0
25
50
75
100
125
150
0
175
5
Case Temperature [°C]
10
15
20
25
30
Collector-Emitter corrent : ICE [A]
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
C
j
30
30
25
25
VGE= 20V
VGE= 20V
15V
15V
20
20
12V
15
IC [A]
IC [A]
12V
10V
15
10V
10
10
8V
5
5
8V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
VCE [V]
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =15mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
j
GE
C
30
CE
10
9
Gate Threshold Voltage VGE(th) [V]
25
IC [A]
20
15
10
Tj=175℃
Tj=25℃
8
typ.
max.
7
6
min.
5
4
3
2
5
1
0
0
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
Tj [℃]
VGE [V]
3
100
125
150
175
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =600V, I =15A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
4
10
C
j
20
Cies
3
10
15
2
10
VGE [V]
C [pF]
VCC=600V
Coes
10
Cres
1
10
5
0
10
0
-2
-1
10
0
10
10
0
150
200
250
300
G
j
CC
CC
C
GE
G
1000
1000
Switching Times [nsec]
td(off)
tf
100
td(on)
10
tr
td(off)
tf
100
td(on)
tr
10
1
1
0
5
10
15
20
25
30
35
0
10
20
50
60
G
C
j
CC
GE
40
Graph.12
Typical switching losses vs. R
T =175ºC, V =600V, I =15A, L=500µH
V =15V
Graph.11
Typical switching losses vs. I
T =175ºC, V =600V, L=500µH
V =15V, R =10Ω
j
30
Gate Resistor Rg [Ω]
Collector Current IC [A]
CC
C
GE
G
6
4
Switching Energy Losses [mJ]
5
Switching Energy Losses [mJ]
Switching Times [nsec]
100
Graph.10
Typical switching time vs. R
T =175ºC, V =600V, I =15A, L=500µH
V =15V
C
GE
50
Qg [nC]
Graph.9
Typical switching time vs. I
T =175ºC, V =600V, L=500µH
V =15V,R =10Ω
j
B
1
10
VCE [V]
4
3
Eon
2
Eoff
3
Eon
2
Eoff
1
1
0
0
0
5
10
15
20
25
30
0
35
Collector Current IC [A]
10
20
30
40
Gate Resistor Rg [Ω]
4
50
60
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. I
T =175°C, V =600V, L=500µH,
V =15V,R =10Ω
Graph.13
FWD Forward voltage drop (V -I )
F
F
F
j
CC
GE
G
8
800
30
20
IF [A]
Tj=25℃
Tj=175℃
15
10
6
600
trr
400
4
Qrr
2
200
5
0
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
10
5
VF [V]
30
IF [A]
F
j
CC
GE
25
Graph.16
Reverse biased Safe Operating Area
T ≤175°C,V =+15V/0V,R =10Ω
Graph.15
Typical reverse recovery loss vs. I
T =175°C,V =600V,L=500µH
V =15V,R =10Ω
j
20
15
GE
G
G
3.0
50
2.5
2.0
Collector current IC [A]
Reverse recovery loss [mJ]
40
1.5
1.0
30
20
10
0.5
0.0
0
0
5
10
15
20
25
0
30
200
400
600
800
1000
Collector-Emitter voltage : VCE [V]
IF [A]
5
1200
1400
Reverse Recovery Charge [uC]
Reverse recovery Time [nsec]
25
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.17
Transient thermal resistance of IGBT
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
t [sec]
Graph.18
Transient thermal resistance of FWD
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
t [sec]
6
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
7
FGW15N120VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
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