AP50T10GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
100V
RDS(ON)
30mΩ
ID
21.8A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely
commercial-industrial through hole applications.
preferred
G
D
TO-220CFM(I)
S
for
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
21.8
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
13.8
A
80
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201112121
AP50T10GI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=16A
-
-
30
mΩ
VGS=5V, ID=12A
-
-
70
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=16A
-
21
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=16A
-
44
70
nC
Qgs
Gate-Source Charge
VDS=80V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
10.5
-
ns
tr
Rise Time
ID=16A
-
26
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
28
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1840 2940
pF
Coss
Output Capacitance
VDS=25V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Ω
Min.
Typ.
IS=16A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
64
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10GI-HF
100
80
10V
7.0V
6.0V
ID , Drain Current (A)
80
60
5.0V
40
60
5.0V
40
V G = 4.0V
20
V G = 4.0V
20
10V
7.0V
6.0V
T C = 150 o C
ID , Drain Current (A)
T C = 25 o C
0
0
0
4
8
12
16
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.4
I D =12A
I D =16A
V G =10V
T C =25 o C
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
50
40
1.6
1.2
30
0.8
0.4
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
I D =250uA
1.6
Normalized VGS(th) (V)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
4
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP50T10GI-HF
I D =16A
V DS =80V
10
8
2000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
3000
12
6
4
1000
2
0
C oss
C rss
0
0
10
20
30
40
50
60
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
Operation in this
area limited by
RDS(ON)
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
24
VG
ID , Drain Current (A)
20
QG
10V
16
QGS
12
QGD
8
4
Charge
Q
0
25
50
75
100
125
T C , Case Temperature (
150
o
175
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4