PHILIPS BLW898 Uhf linear power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW898
UHF linear power transistor
Product specification
Supersedes data of 1995 Oct 04
1996 Jul 16
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
PINNING SOT171A
FEATURES
• Internal input matching for wideband operation and high
power gain
PIN
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
handbook, halfpage
c
2 4 6
DESCRIPTION
NPN silicon planar transistor in a SOT171A 6-lead
rectangular flange package, with a ceramic cap. The
transistor delivers a Po sync = 3 W in class-A operation at
860 MHz and a supply voltage of 25 V.
b
e
1 3 5
Top view
MAM141
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
CW class-A
860
25
1.1
≥3(1)
≥9(1)
Note
1. Three-tone test signal (−8, −16, and −10 dB); dim = −63 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 16
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
28
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
3.7
A
IC(AV)
average collector current
−
3.7
A
Ptot
total power dissipation
−
44
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
up to Tmb = 70 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to
mounting-base
Rth mb-h
thermal resistance from
mounting-base to heatsink
Ptot = 44 W; Tmb = 70 °C
MGD531
120
handbook, halfpage
Ptot
(W)
80
(2)
(1)
40
0
40
0
80
120
Tmb °C
160
(1) Continuous operation
(2) Short-time operation during mismatch.
Fig.2
1996 Jul 16
Power derating curve.
3
VALUE
UNIT
3
K/W
0.3
K/W
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
MAX.
−
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 15 mA; IE = 0
60
V
V(BR)CEO
collector-emitter breakdown voltage
IC = 30 mA; IB = 0
28
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.6 mA; IC = 0
2.5
−
−
V
ICBO
collector-base leakage current
VBE = 0; VCB = 28 V
−
−
1.5
mA
mA
ICEO
collector-emitter leakage current
VCE = 20 V
−
−
3
hFE
DC current gain
VCE = 25 V; IC = 1.1 A
30
−
140
Cc
collector capacitance
VCB = 25 V; IE = ie = 0;
f = 1 MHz
−
18
−
pF
Cre
feedback capacitance
VCB = 25 V; IC = 0; f = 1 MHz −
11
−
pF
MGD532
MGD533
60
handbook, halfpage
160
handbook, halfpage
hFE
Cc
(pF)
120
40
80
20
40
0
0
0
1
2
IC (A)
0
3
10
40
30
VCB (V)
VCE = 25 V; tp = 500 µs; δ = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
1996 Jul 16
20
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter class-A test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
dim
(dB)
CW class-A
860
25
1.1
≥3(1)
≥9(1)
<−63(1)
CW class-A
860
25
1.1
≥3(2)
≥9(2)
<−60(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the
conditions: VCE = 25 V; ICQ = 1.1 A; Th = 25 °C; f = 860 MHz; Po sync = 3 W.
MGD534
MGD535
12
30
handbook, halfpage
handbook, halfpage
Po sync
(W)
(1)
(1)
Gp
(dB)
(2)
(2)
20
8
10
4
0
0
0
1
2
3
0
4
Pi sync (W)
10
20
30
Po sync (W)
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.5
Fig.6
Output power as a function of input power;
typical values.
1996 Jul 16
5
Power gain as a function of output power;
typical values.
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
MGD536
−10
MGD537
-40
handbook, halfpage
handbook, halfpage
dim
(dB)
dim
(dB)
−30
-50
(1)
(2)
−50
-60
(1)
(2)
−70
-70
0
10
20
30
0
0.4
0.8
1.2
1.6
IC (A)
Po sync (W)
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; Po sync = 3 W;
(3-tone; −8/−16/−10 dB).
(1) Th = 70 °C.
(2) Th = 25 °C.
Fig.7
Fig.8
Intermodulation distortion as a function of
output power; typical values.
Intermodulation distortion as a function of
collector current; typical values.
,,,,,,
,
,,,,,,
,,,,,,
,,,,,,
,,,,,,
L12
R2
handbook, full pagewidth
+VBB
C5
C4
C9
L6
input
50 Ω
,,,,,,
,,,,,,
C1
L2 L3 L4 L5
L1
C2
C10
C11
C12
L11
C6
C7
L9
DUT
L7
C3
L8
L10
C13
output
50 Ω
C8
Fig.9 Class-A test circuit at 860 MHz.
1996 Jul 16
+VCC
R1
6
MGD538
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
160
handbook, full pagewidth
77
77
69
+VBB
+VCC
R2
C10
C5
L12
C4
L11
R1
C9
C12
C11
L6
C1
L1
L2 & L3
C2
L4 & L5
C3
L9
C7
C6
C8
L10
C13
L7 & L8
MGD539
Dimensions in mm.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1996 Jul 16
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1
multilayer ceramic chip capacitor;
note 1
8.2 pF
C2, C8
Tekelec Giga trim 37271
0.6 to 4.5 pF
C3
multilayer ceramic chip capacitor;
note 1
15 pF
C4, C12
multilayer ceramic chip capacitor
10 nF; 63 V
2222 592 16627
C5
solid aluminium capacitor
10 µF; 63 V
2222 030 38109
C6
multilayer ceramic chip capacitor;
note 2
10 pF
C7
multilayer ceramic chip capacitor;
note 2
2.4 pF
C9
multilayer ceramic chip capacitor;
note 2
500 pF
C10
solid aluminium capacitor
47 µF; 63 V
C11
multilayer ceramic chip capacitor;
note 2
330 pF
C13
multilayer ceramic chip capacitor;
note 1
5.1 pF
L1
stripline; note 3
50 Ω
50 × 2.3 mm
L2
stripline; note 3
50 Ω
10 × 2.3 mm
L3
stripline; note 3
40 Ω
2 × 3.25 mm
L4, L5
stripline; note 3
40 Ω
4 × 3.25 mm
L6
RF choke
220 nH
L7
stripline; note 3
40 Ω
2222 031 38479
9 × 3.25 mm
L8
stripline; note 3
40 Ω
3.5 × 3.25 mm
L9
stripline; note 3
50 Ω
9 × 2.3 mm
L10
stripline; note 3
50 Ω
48.5 × 2.3 mm
L11
stripline; note 3
40 Ω
41.5 × 3.25 mm
L12
grade 4S2 ferroxcube wideband
RF choke
R1
metal film resistor
50 Ω; 0.6 W
2322 156 14999
R2
metal film resistor
10 Ω; 0.6 W
2322 156 11009
4330 030 36301
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 0.79 mm.
1996 Jul 16
8
Philips Semiconductors
Product specification
UHF linear power transistor
Table 1
BLW898
Common emitter scattering parameter, ICQ = 1.1 A; VCE = 25 V.
f
(MHZ)
S11
MAG.
(RAT)
S21
ANG.
(DEG)
MAG.
(RAT)
S12
ANG.
(DEG)
MAG.
(RAT)
S22
ANG.
(DEG)
MAG.
(ANG)
ANG.
(DEG)
GUM
(dB)
470
0.962
176.1
1.002
68.3
0.017
32.6
0.802
−178.2
15.7
495
0.961
175.9
0.961
66.9
0.017
32.8
0.803
−178.2
15.2
520
0.959
175.7
0.923
65.7
0.017
33.6
0.804
−178.2
14.7
545
0.958
175.5
0.891
64.4
0.018
34.9
0.803
−178.3
14.3
570
0.957
175.3
0.861
63.2
0.018
35.8
0.804
−178.2
14.0
595
0.955
175.0
0.835
62.0
0.018
36.1
0.805
−178.2
13.5
620
0.953
174.8
0.815
61.0
0.019
36.8
0.804
−178.2
13.0
645
0.951
174.5
0.795
59.7
0.019
37.3
0.805
−178.1
12.7
670
0.950
174.2
0.775
58.6
0.019
37.4
0.807
−178.0
12.5
695
0.947
173.9
0.757
57.7
0.020
37.8
0.806
−178.0
12.0
720
0.943
173.7
0.744
56.6
0.021
38.5
0.805
−178.1
11.5
745
0.942
173.4
0.732
55.4
0.021
38.6
0.807
−177.9
11.3
770
0.941
173.1
0.724
54.4
0.021
39.8
0.808
−177.8
11.1
795
0.938
172.8
0.716
53.3
0.021
40.1
0.807
−177.8
10.8
820
0.935
172.5
0.707
51.8
0.022
39.1
0.808
−177.8
10.6
845
0.933
172.1
0.701
50.9
0.021
39.3
0.810
−177.6
10.4
860
0.932
171.9
0.700
50.2
0.022
39.4
0.809
−177.5
10.3
1996 Jul 16
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
PACKAGE OUTLINE
11.5
10.5
handbook, full pagewidth
5.85
2.25
min
1 (2x)
3.25
9.15 2.85
1
2
3
4
5
6
25.2
max
18.42
2.25
1.85 (2x)
3.45 (2x)
3.15
2.8
4.50
4.05 7.0
max
6 max
0.14
MBC828 - 1
Dimensions in mm.
Fig.11 SOT171A.
1996 Jul 16
10
9.3
max
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 16
11
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(1) BLW898_2 June 26, 1996 11:51 am
© Philips Electronics N.V. 1996
SCA50
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Printed in The Netherlands
127041/1200/02/pp12
Date of release: 1996 Jul 16
Document order number:
9397 750 00966