MUR20100, MUR20120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR20100 MUR20120 VRSM V 1000 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 70 17 220 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 130 140 110 120 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 85 80 60 60 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings TVJ=45oC I2t VRRM V 1000 1200 Dim. o C 78 W 0.4...0.6 Nm 2 g MUR20100, MUR20120 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 750 250 7 uA uA mA VF IF=12A; TVJ=150oC TVJ=25oC 1.87 2.15 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 18.2 m 1.6 60 K/W 60 ns rT RthJC RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 40 o _ VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C 7 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Glass passivated chips * Very short recovery time * Extremely low losses at high switching frequencies * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR20100, MUR20120 Ultra Fast Recovery Diodes 50 6 70 A 60 TVJ=100°C VR= 540V uC 5 TVJ= 25°C TVJ=100°C TVJ=150°C 30 Qr 3 max. IF=30A IF=60A IF=30A IF=15A IRM IF=30A IF=60A IF=30A IF=15A 4 40 TVJ=100°C VR= 540V 40 50 IF A 30 20 2 20 typ. max. 10 1 10 typ. 0 0 0 0 1 VF 2 3 V 1 4 10 100 A/us 1000 0 -diF/dt Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. 1.0 s 0.9 1.4 1.2 IRM Kf TVJ=100°C VR=540V 60 1200 V 50 1000 ns VFR trr 0.7 0.8 0.6 0.6 0.5 QR max. IF=30A IF=60A IF=30A IF=15A 0.4 0.4 VFR 40 800 30 600 400 20 tfr 0.3 0.2 10 typ. 0.2 0.0 0.1 0 40 TVJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 400 A/us 600 Fig. 3 Peak reverse current versus -diF/dt. 0.8 1.0 200 -diF/dt 0 200 -diF/dt 400 A/us 600 Fig. 5 Recovery time versus -diF/dt. Fig. 7 Transient thermal impedance junction to case. TVJ=125°C IF=30A 0 0 400 A/us 600 200 -diF/dt Fig. 6 Peak forward voltage versus diF/dt. 200 0 tfr