Ordering number : ENA1890A EMH2409 N-Channel Power MOSFET http://onsemi.com 30V, 4A, 59mΩ, Dual EMH8 Features • • • • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 30 V ±20 V 4 A PW≤10μs, duty cycle≤1% 16 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.0 W Total Dissipation PD PT 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7045-006 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2409-TL-H 5 Packing Type : TL Marking LJ 2.1 1.7 8 TL 1 Lot No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/D1510PE TKIM TC-00002532 No. A1890-1/7 EMH2409 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Conditions Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V VDS=10V, ID=2A ID=2A, VGS=10V 1.66 S 45 59 ID=1A, VGS=4.5V ID=1A, VGS=4V 85 119 mΩ 110 155 mΩ mΩ 240 pF 45 pF Crss 30 pF td(on) tr 6.2 ns 11 ns 17 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=4A 7.5 ns 4.4 nC 1.1 nC 0.64 IS=4A, VGS=0V 0.82 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=2A RL=7.5Ω VIN D PW=10μs D.C.≤1% VOUT G EMH2409 P.G 50Ω S Ordering Information Device EMH2409-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1890-2/7 EMH2409 ID -- VDS V 4.0 1.0 1 VGS=3.0V 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2A 160 120 80 40 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 5 IT14211 A I =1 4.0V, D = VGS 1A , I D= 4.5V = VGS 120 80 =2A V, I D 10.0 V GS= 40 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14213 IS -- VSD 7 5 VGS=0V 3 3 2 C 5° --2 °C 75 5 °C 25 3 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.2 C = Ta --25° 7 25°C 1.0 1.0 7 5 5°C 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 160 0 --60 16 VDS=10V 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 7 5 Switching Time, SW Time -- ns 2 RDS(on) -- Ta IT16223 | yfs | -- ID 5 4 Gate-to-Source Voltage, VGS -- V Ta= 7 0 5 7 SW Time -- ID 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT14215 Ciss, Coss, Crss -- VDS 5 VDD=15V VGS=10V f=1MHz 3 3 td(off) 2 10 tf 7 5 td(on) tr 3 Ciss 2 100 7 5 Coss Crss 3 2 2 1.0 0.1 0.4 IT14214 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1A 1 200 Ta=25°C 200 0 IT14210 RDS(on) -- VGS 240 2 --25° C 1.5 3 C 3.5V 25° C 2.0 4 Ta= 75° 2.5 0 VDS=10V 5 3.0 0 ID -- VGS 6 Drain Current, ID -- A Drain Current, ID -- A 3.5 4.5 V 15.0V 10.0V 6.0V 4.0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 10 IT14216 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14217 No. A1890-3/7 EMH2409 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=15V ID=4A 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.4 4.0 4.5 IT16151 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=16A (PW≤10μs) 10 0 1m μs s ID=4A 10 DC ms 10 op 0m s tio n era Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16152 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 To t al 0.8 Di ss 1u 0.6 ip ati on nit 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16153 No. A1890-4/7 EMH2409 Embossed Taping Specification EMH2409-TL-H No. A1890-5/7 EMH2409 Outline Drawing EMH2409-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1890-6/7 EMH2409 Note on usage : Since the EMH2409 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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