CM1000DUC-34NF Mega Power Dual IGBTMOD™ Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1000 Amperes/1700 Volts A D P (8 PLACES) U N G H H L S W K C2E1 C2 C1 G2 E1 E2 G1 X J F BB Y CB Z CC F J E2 C1 U V E H H H H H H G G AA L R (9 PLACES) M LABEL T G2 E2 C2 C2E1 E2 C1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 5.91 Millimeters Dimensions Inches Millimeters 150.0 M 0.075±0.008 1.9±0.2 B 5.10 129.5 N 0.47 12.0 C 1.67±0.01 42.5±0.25 P 0.26 6.5 D 5.41±0.01 137.5±0.25 R M6 Metric M6 E 6.54 166.0 S 0.08 2.0 F 2.91±0.01 74.0±0.25 T 0.99 25.1 G 1.65 42.0 U 0.62 15.7 Description: Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heatsinking £ RoHS Compliant Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1000DUC-24NF is a 1700V (VCES), 1000 Ampere Dual IGBTMOD Power Module. H 0.55 14.0 V 0.71 18.0 J 1.50±0.01 38.0±0.25 W 0.75 19.0 0.16 4.0 X 0.43 11.0 Y 0.83 21.0 Z 0.41 10.5 Type Current Rating Amperes VCES Volts (x 50) AA 0.22 5.5 CM 1000 34 K L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N 07/11 Rev. 2 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DUC-34NF Mega Power Dual IGBTMOD™ 1000 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Symbol CM1000DUC-34NF Units Tj -40 to 150 °C *7 Storage Temperature Tstg Collector-Emitter Voltage (G-E SHORT) VCES Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current DC (TC = 104°C)*2 IC 1000 Amperes ICRM 2000 Amperes Ptot 8925 Watts Peak Collector Current (Pulse, Repetitive)*3 Total Power Dissipation (TC = 25°C)*2,*4 *2,*4 *1 Emitter Current, FWDi (TC = 25°C) IE -40 to 125 °C 1700 Volts 1000 Amperes IERM*1 2000 Amperes Main terminals Mounting Torque, M6 Screw – 40 in-lb (max.) Mounting to Heatsink Mounting Torque, M6 Screw – 40 in-lb (max.) Peak Emitter Current, FWDi (Pulse, Repetitive)*3 Weight (Typical) – 1450 Grams Flatness to Baseplate (On Centerline X, Y1, Y2)*8 ec -50 to 100 µm Viso 3500 Volts Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.) *1 *2 *3 *4 *7 *8 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. The operation temperature is restrained by the permission temperature of female connector housing. Baseplate flatness measurement point is as in the following figure. – CONCAVE + CONVEX 39 mm 39 mm Y1 Y2 X BOTTOM BOTTOM – CONCAVE LABEL SIDE BOTTOM 2 + CONVEX 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DUC-34NF Mega Power Dual IGBTMOD™ 1000 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 6 7 Collector-Emitter Saturation Voltage (Chip) VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 – 2.2 IC = 1000A, VGE = 15V, Tj = 125°C*5 (Without Lead Resistance) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge Inductive Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time Times Fall Time Emitter-Collector Voltage (Chip) VCE = 10V, VGE = 0V – 2.45 – – – – 8 Volts 2.85 Volts – Volts 220 nF – 25 nF – 4.7 nF QG VCC = 1000V, IC = 1000A, VGE = 15V – 6000 td(on) VCC = 1000V, IC = 1000A, – – – nC 600 ns tr VGE1 = VGE2 = 15V, – td(off) RG = 0.47Ω, Inductive Load – – 200 ns – 1000 ns 300 ns 3 Volts ns tf Switching Operation – – VEC*1 IE = 1000A, VGE = 0V*5 – 2.3 trr*1 VCC = 1000V, IE = 1000A, VGE = ±15V, – – 500 (Without Lead resistance) Reverse Recovery Time *1 Reverse Recovery Charge Qrr Turn-on Switching Energy Per Pulse Eon RG = 0.47Ω, Inductive Load – 90 – µC VCC = 1000V, IC = IE = 1000A, – 272.4 – mJ Turn-off Switching Energy Per Pulse Eoff VGE = 15V, RG = 0.47Ω, – 250.2 – mJ Reverse Recovery Energy Per Pulse Err*1 Tj = 125°C, Inductive Load – 172.4 – mJ R(lead) Main Terminals-Chip, Per Switch, – 0.286 – mΩ – 0.67 – Ω Internal Lead Resistance Tj = 25°C*2 Internal Gate Resistance rg Per Switch Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT – – 0.014 °C/W *2 Rth(j-c)D Per Clamp Diode – – 0.023 °C/W Rth(c-f) Per 1/2 Module – 0.012 – °C/W Thermal Resistance, Junction to Case Contact Thermal Resistance, *2 Case to Heatsink Thermal Grease Applied Units *6 Recommended Operating Conditions, Ta = 25°C unless otherwise specified Characteristics DC Supply Voltage Rth(j-c)Q Gate (-Emitter Drive) Voltage External Gate Resistance *1 *2 *5 *6 Symbol Test Conditions Min. VCC Applied Across C1-E2 – VGE(on) Applied Across G1-Es1/G2-Es2 13.5 RG Per Switch 0.47 Typ. 1000 Max. Units 1100 Volts 15.0 16.5 Volts – 4.7 Ω Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. Pulse width and repetition rate should be such as to cause negligible temperature rise. Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K). 07/11 Rev. 2 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DUC-34NF Mega Power Dual IGBTMOD™ 1000 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 15 13 1600 12 1200 11 800 400 10 9 0 2 4 6 8 2 1 0 1200 1600 IC = 1000A 6 IC = 400A 4 IC = 2000A 2 0 2000 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 1.5 2.0 2.5 3.0 3.5 102 101 Cres 100 10-1 10-1 104 td(off) 101 10-1 tf tr VCC = 1000V VGE = ±15V IC = 1000A Tj = 125°C Inductive Load 100 EXTERNAL GATE RESISTANCE, RG, (Ω) 101 REVERSE RECOVERY TIME, trr, (ns) 102 101 tr 102 103 103 trr 103 EMITTER CURRENT, IE, (AMPERES) 104 GATE CHARGE, VGE Irr 102 102 103 COLLECTOR CURRENT, IC, (AMPERES) 104 VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 25°C Inductive Load VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive Load 101 102 102 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 td(on) 100 td(on) tf COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Coes td(off) 103 102 104 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 1.0 104 VGE = 0V SWITCHING TIME, (ns) 103 20 Cies CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C Tj = 125°C EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SWITCHING TIME, (ns) 800 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 0.5 4 400 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 EMITTER CURRENT, IE, (AMPERES) 3 0 10 VGE = 15V Tj = 25°C Tj = 125°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 10 4 Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 2000 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) IC = 1000A Tj = 25°C 16 VCC = 800V VCC = 1000V 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 10-3 10-2 10-1 100 101 10-1 10-2 Single Pulse TC = 25°C Per Unit Base Rth(j-c') = 0.014°C/W (IGBT) Rth(j-c') = 0.023°C/W (Clamp) 10-3 10-5 10-4 VCC = 1000V VGE = ±15V Tj = 125°C RG = 0.47Ω Eon Eoff Inductive Load 103 TIME, (s) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) 104 VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Eon Eoff Inductive Load 102 101 10-1 100 GATE RESISTANCE, RG, (Ω) 07/11 Rev. 2 101 SWITCHING LOSS, Err, (mJ/PULSE) 104 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 101 102 10-3 103 REVERSE RECOVERY ENERGY VS. FORWARD CURRENT (TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 3 10 103 103 SWITCHING LOSS, Err, (mJ/PULSE) 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & CLAMP DIODE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM1000DUC-34NF Mega Power Dual IGBTMOD™ 1000 Amperes/1700 Volts 104 VCC = 1000V VGE = ±15V Tj = 125°C RG = 0.47Ω Inductive Load 102 101 102 103 104 EMITTER CURRENT, IE, (AMPERES) VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Inductive Load 102 101 10-1 100 101 GATE RESISTANCE, RG, (Ω) 5