Powerex Power CM1000DUC-34NF Mega power dual igbtmodâ ¢ 1000 amperes/1700 volt Datasheet

CM1000DUC-34NF
Mega Power
Dual IGBTMOD™
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
1000 Amperes/1700 Volts
A
D
P
(8 PLACES)
U
N
G
H H
L
S
W
K
C2E1
C2
C1
G2
E1
E2
G1
X J
F
BB
Y CB
Z
CC
F
J
E2
C1
U
V
E
H H H H H H
G
G
AA
L
R (9 PLACES) M
LABEL
T
G2
E2
C2
C2E1
E2
C1
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
5.91
Millimeters
Dimensions
Inches
Millimeters
150.0
M
0.075±0.008
1.9±0.2
B
5.10
129.5
N
0.47
12.0
C
1.67±0.01
42.5±0.25
P
0.26
6.5
D
5.41±0.01
137.5±0.25
R
M6 Metric
M6
E
6.54
166.0
S
0.08
2.0
F
2.91±0.01
74.0±0.25
T
0.99
25.1
G
1.65
42.0
U
0.62
15.7
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DUC-24NF
is a 1700V (VCES), 1000 Ampere
Dual IGBTMOD Power
Module.
H
0.55
14.0
V
0.71
18.0
J
1.50±0.01
38.0±0.25
W
0.75
19.0
0.16
4.0
X
0.43
11.0
Y
0.83
21.0
Z
0.41
10.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
AA
0.22
5.5
CM
1000
34
K
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
07/11 Rev. 2
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM1000DUC-34NF
Units
Tj
-40 to 150
°C
*7
Storage Temperature
Tstg
Collector-Emitter Voltage (G-E SHORT)
VCES
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current DC (TC = 104°C)*2
IC
1000
Amperes
ICRM
2000
Amperes
Ptot
8925
Watts
Peak Collector Current (Pulse, Repetitive)*3
Total Power Dissipation (TC = 25°C)*2,*4
*2,*4
*1
Emitter Current, FWDi (TC = 25°C)
IE
-40 to 125
°C
1700
Volts
1000
Amperes
IERM*1
2000
Amperes
Main terminals Mounting Torque, M6 Screw
–
40
in-lb (max.)
Mounting to Heatsink Mounting Torque, M6 Screw
–
40
in-lb (max.)
Peak Emitter Current, FWDi (Pulse, Repetitive)*3
Weight (Typical)
–
1450
Grams
Flatness to Baseplate (On Centerline X, Y1, Y2)*8
ec
-50 to 100
µm
Viso
3500
Volts
Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.)
*1
*2
*3
*4
*7
*8
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
The operation temperature is restrained by the permission temperature of female connector housing.
Baseplate flatness measurement point is as in the following figure.
– CONCAVE
+ CONVEX
39 mm
39 mm
Y1
Y2
X
BOTTOM
BOTTOM
– CONCAVE
LABEL SIDE
BOTTOM
2
+ CONVEX
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 100mA, VCE = 10V
6
7
Collector-Emitter Saturation Voltage (Chip)
VCE(sat)
IC = 1000A, VGE = 15V, Tj = 25°C*5
–
2.2
IC = 1000A, VGE = 15V, Tj = 125°C*5
(Without Lead Resistance)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Emitter-Collector Voltage (Chip)
VCE = 10V, VGE = 0V
–
2.45
–
–
–
–
8
Volts
2.85
Volts
–
Volts
220
nF
–
25
nF
–
4.7
nF
QG
VCC = 1000V, IC = 1000A, VGE = 15V
–
6000
td(on)
VCC = 1000V, IC = 1000A,
–
–
–
nC
600
ns
tr
VGE1 = VGE2 = 15V,
–
td(off)
RG = 0.47Ω, Inductive Load
–
–
200
ns
–
1000
ns
300
ns
3
Volts
ns
tf
Switching Operation
–
–
VEC*1
IE = 1000A, VGE = 0V*5
–
2.3
trr*1
VCC = 1000V, IE = 1000A, VGE = ±15V,
–
–
500
(Without Lead resistance)
Reverse Recovery Time
*1
Reverse Recovery Charge
Qrr
Turn-on Switching Energy Per Pulse
Eon
RG = 0.47Ω, Inductive Load
–
90
–
µC
VCC = 1000V, IC = IE = 1000A,
–
272.4
–
mJ
Turn-off Switching Energy Per Pulse
Eoff
VGE = 15V, RG = 0.47Ω,
–
250.2
–
mJ
Reverse Recovery Energy Per Pulse
Err*1
Tj = 125°C, Inductive Load
–
172.4
–
mJ
R(lead)
Main Terminals-Chip, Per Switch,
–
0.286
–
mΩ
–
0.67
–
Ω
Internal Lead Resistance
Tj = 25°C*2
Internal Gate Resistance
rg
Per Switch
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Thermal Resistance, Junction to Case*2
Rth(j-c)Q
Per IGBT
–
–
0.014
°C/W
*2
Rth(j-c)D
Per Clamp Diode
–
–
0.023
°C/W
Rth(c-f)
Per 1/2 Module
–
0.012
–
°C/W
Thermal Resistance, Junction to Case
Contact Thermal Resistance,
*2
Case to Heatsink
Thermal Grease Applied
Units
*6
Recommended Operating Conditions, Ta = 25°C unless otherwise specified
Characteristics
DC Supply Voltage
Rth(j-c)Q
Gate (-Emitter Drive) Voltage
External Gate Resistance
*1
*2
*5
*6
Symbol
Test Conditions
Min.
VCC
Applied Across C1-E2
–
VGE(on)
Applied Across G1-Es1/G2-Es2
13.5
RG
Per Switch
0.47
Typ.
1000
Max.
Units
1100
Volts
15.0
16.5
Volts
–
4.7
Ω
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
07/11 Rev. 2
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 20V
15
13
1600
12
1200
11
800
400
10
9
0
2
4
6
8
2
1
0
1200
1600
IC = 1000A
6
IC = 400A
4
IC = 2000A
2
0
2000
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
1.5
2.0
2.5
3.0
3.5
102
101
Cres
100
10-1
10-1
104
td(off)
101
10-1
tf
tr
VCC = 1000V
VGE = ±15V
IC = 1000A
Tj = 125°C
Inductive Load
100
EXTERNAL GATE RESISTANCE, RG, (Ω)
101
REVERSE RECOVERY TIME, trr, (ns)
102
101
tr
102
103
103
trr
103
EMITTER CURRENT, IE, (AMPERES)
104
GATE CHARGE, VGE
Irr
102
102
103
COLLECTOR CURRENT, IC, (AMPERES)
104
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 25°C
Inductive Load
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 125°C
Inductive Load
101
102
102
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
td(on)
100
td(on)
tf
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Coes
td(off)
103
102
104
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
1.0
104
VGE = 0V
SWITCHING TIME, (ns)
103
20
Cies
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
Tj = 125°C
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
SWITCHING TIME, (ns)
800
8
COLLECTOR-CURRENT, IC, (AMPERES)
102
0.5
4
400
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
EMITTER CURRENT, IE, (AMPERES)
3
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
0
10
4
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
2000
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 1000A
Tj = 25°C
16
VCC = 800V
VCC = 1000V
12
8
4
0
0
2000
4000
6000
8000 10000
GATE CHARGE, QG, (nC)
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
10-3
10-2
10-1
100
101
10-1
10-2
Single Pulse
TC = 25°C
Per Unit Base
Rth(j-c') =
0.014°C/W
(IGBT)
Rth(j-c') =
0.023°C/W
(Clamp)
10-3
10-5
10-4
VCC = 1000V
VGE = ±15V
Tj = 125°C
RG = 0.47Ω
Eon
Eoff
Inductive Load
103
TIME, (s)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
104
VCC = 1000V
VGE = ±15V
Tj = 125°C
IC = 1000A
Eon
Eoff
Inductive Load
102
101
10-1
100
GATE RESISTANCE, RG, (Ω)
07/11 Rev. 2
101
SWITCHING LOSS, Err, (mJ/PULSE)
104
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
101
102
10-3
103
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
3
10
103
103
SWITCHING LOSS, Err, (mJ/PULSE)
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
104
VCC = 1000V
VGE = ±15V
Tj = 125°C
RG = 0.47Ω
Inductive Load
102
101
102
103
104
EMITTER CURRENT, IE, (AMPERES)
VCC = 1000V
VGE = ±15V
Tj = 125°C
IC = 1000A
Inductive Load
102
101
10-1
100
101
GATE RESISTANCE, RG, (Ω)
5
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