Vishay MCL4151-TR3 Small signal fast switching diode Datasheet

MCL4151
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the device
e2
1N4151
• Micro Melf package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612315
Applications
Mechanical Data
• Extreme fast switches
Case: MicroMELF Glass case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR3 / 10 k per 13" reel (8 mm tape), 10 k/box
TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
VRRM = 75 V
MCL4151
Ordering code
Remarks
MCL4151-TR3 or MCL4151-TR
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
Document Number 85567
Rev. 1.8, 07-Mar-06
VR = 0
Symbol
Value
Unit
VRRM
75
V
VR
50
V
IFSM
2
A
IFRM
450
mA
IF
200
mA
IFAV
150
mA
PV
500
mW
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MCL4151
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction to ambient air
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
mounted on epoxy-glass hard
tissue, Fig. 4,
35 µm copper clad, 0.9 mm2
copper area per electrode
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Typ.
Max
Unit
880
1000
mV
50
nA
50
µA
CD
2
pF
IF = IR = 10 mA, iR = 1 mA
trr
4
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2
ns
Forward voltage
IF = 50 mA
VF
Reverse voltage
VR = 50 V
IR
Breakdown voltage
IR = 5 µA, tp/T = 0.01, tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
VR = 50 V, Tj = 150 °C
Reverse recovery time
Min
IR
75
V
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
Scattering Limit
I F - Forward Current (mA)
I R - Reverse Current (µA)
100
10
1
0.1
V R = 50 V
0.01
0
94 9151
40
80
120
160
2
10
Tj = 25 °C
1
0.1
0
200
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
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Tj = 100 °C
100
94 9152
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
Document Number 85567
Rev. 1.8, 07-Mar-06
MCL4151
Vishay Semiconductors
C D - Diode Capacitance (pF)
3.0
0.71
2.5
1.27
0.152
f = 1 MHz
Tj = 25 °C
2.0
1.3
9.9
0.355
25
1.5
1.0
10
0.5
2.5
0
0.1
1
10
100
24
95 10329
V R - Reverse Voltage (V)
94 9153
Figure 3. Diode Capacitance vs. Reverse Voltage
Figure 4. Board for RthJA definition (in mm)
2.0 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
3)
1.
35
la (0.
ss 05
G
1.2 (0.047)
1.1 (0.043)
1 (0.039) surface plan
Glass case
MicroMELF
<
Cathode indification
surface plan
0.6
(0.024)
Package Dimensions in mm (Inches)
> R 2.5 (R 0.098)
Glass
ISO Method E
Wave Soldering
1.4 (0.055)
1.2 (0.047)
Reflow Soldering
0.8 (0.031)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
0.8 (0.031)
1.0 (0.039)
2.4 (0.094)
2.8 (0.110)
Document No.: 6.560-5007.01-4
Rev. 11, 07.Feb.2005
9612072
Document Number 85567
Rev. 1.8, 07-Mar-06
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MCL4151
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85567
Rev. 1.8, 07-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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