APT29F100B2 APT29F100L 1000V, 30A, 0.44Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-MaxTM TO-264 APT29F100B2 APT29F100L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 30 Continuous Drain Current @ TC = 100°C 19 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 16 A 1 120 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range 150 °C Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 04-2009 TL Torque -55 Rev C TJ,TSTG °C/W 0.11 050-8079 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VDS = 1000V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.15 0.37 4 -10 0.44 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min 1000 VGS = 10V, ID = 16A 3 IDSS Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT29F100B2_L Min Test Conditions VDS = 50V, ID = 16A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 34 8500 115 715 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 290 VGS = 0V, VDS = 0V to 667V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 150 260 46 125 39 35 130 VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns 33 Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 30 A G 120 S ISD = 16A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 16A 3 TJ = 25°C diSD/dt = 100A/µs TJ = 125°C Unit TJ = 25°C TJ = 125°C ISD ≤ 16A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C 230 500 13 35 11 15 1.1 270 640 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 14.65mH, RG = 25Ω, IAS = 16A. 050-8079 Rev C 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT29F100B2_L 30 80 V GS = 10V T = 125°C J 70 25 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) TJ = -55°C 60 50 40 TJ = 25°C 30 20 TJ = 125°C 10 V = 6, 7, 8 & 9V GS 20 15 5V 10 5 4.5V TJ = 150°C 0 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 120 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 100 2.5 2.0 1.5 1.0 80 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 0.5 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 45 Ciss 10,000 40 35 TJ = -55°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 16A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 30 TJ = 25°C 25 TJ = 125°C 20 15 1000 Coss 100 10 Crss 5 0 10 0 4 8 12 16 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 20 0 200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 120 16 VDS = 500V 8 6 VDS = 800V 4 2 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 80 60 TJ = 25°C 40 TJ = 150°C 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 04-2009 VDS = 200V 10 100 Rev C 12 050-8079 14 ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 16A APT29F100B2_L 200 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13µs 100µs 1ms 1 Rds(on) 10ms 10 TJ = 150°C TC = 25°C 1 0.1 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25°C)*(TJ - TC)/125 DC line C 100ms TJ = 125°C TC = 75°C 13µs 100µs Rds(on) 1ms 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t2 t1 = Pulse Duration SINGLE PULSE 0.02 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 04-2009 Rev C 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-8079 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.