AP3B026M
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Low On-resistance
D1
D1
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
SO-8
S1
S2
G1
G2
BVDSS
-30V
RDS(ON)
26mΩ
ID
-7.2A
Description
AP3B026 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
D2
D1
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
.
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
-7.2
A
-5.7
A
-30
A
2
W
24.5
mJ
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
3
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201611101
AP3B026M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-7A
-
-
26
mΩ
VGS=-4.5V, ID=-4A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
24
38.4
nC
Qgs
Gate-Source Charge
VDS=-15V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
13
-
ns
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
70
-
ns
tf
Fall Time
VGS=-10V
-
32
-
ns
Ciss
Input Capacitance
VGS=0V
-
2900 4640
pF
Coss
Output Capacitance
VDS=-15V
-
285
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
225
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.3
10.6
Ω
Min.
Typ.
Max. Units
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad.
4.Starting Tj=25oC , VDD=-30V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3B026M
20
30
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
20
T A =150 o C
16
-ID , Drain Current (A)
o
T A =25 C
10
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
12
8
4
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
22
I D = -4A
I D = -7A
V G = -10V
20
18
.
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
2
1.6
1.2
0.8
16
0.4
14
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D = -250uA
1.6
T j =25 o C
o
T j =150 C
-IS(A)
Normalized VGS(th)
8
6
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
-V SD
0.6
0.8
1
, Source-to-Drain Voltage (V)
1.2
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3B026M
f=1.0MHz
5000
I D = -4A
V DS = -15V
4000
6
C (pF)
-VGS , Gate to Source Voltage (V)
8
4
3000
C iss
2000
2
1000
0
C oss
C rss
0
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
-ID (A)
10
100us
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
.
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.01
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
30
V DS = -5V
o
o
T j =25 C
T j =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
8
20
10
6
4
2
0
0
1
2
3
4
5
6
0
25
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Drain Current v.s. Ambient
Temperature
4
AP3B026M
2
2.4
I D = -1mA
2
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
1.6
1.2
0.8
0.4
0.4
0
0
-100
-50
0
T
j
50
100
0
150
, Junction Temperature ( o C)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
100
T j =25 o C
RDS(ON) (mΩ)
80
60
.
40
-4.5V
V GS = -10V
20
0
0
10
20
30
40
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP3B026M
MARKING INFORMATION
Part Number
3B026
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6