ASW101 5 ~ 3000 MHz MMIC Amplifier Features Description 18 dB Gain at 900 MHz The ASW101, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 3 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. 17 dBm P1dB at 900 MHz 30 dBm Output IP3 at 900 MHz 3.8 dB NF at 900 MHz MTTF > 100 Years Single Supply ASW101 Package Style: SOT89 Typical Performance (Supply Voltage = +3.3 V, TA = +25 C, Zo = 50 ) Application Circuit IF Parameters Units Typical Frequency MHz 900 2000 Gain dB 18 11 S11 dB -10 -10 S22 dB -18 -18 IF (100 ~350MHz) & +5 V, 50 mA Output IP31) dBm 30 31 500 ~ 2500 MHz Noise Figure dB 3.8 4.0 Output P1dB dBm 17 18 Current mA 40 40 Device Voltage V +3.3 +3.3 IF (Low Current) 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Min Typ Testing Frequency MHz Gain dB S11 dB S22 dB Output IP3 dBm Noise Figure dB Output P1dB dBm 16 17 Current mA 35 40 Device Voltage V Max 900 17 18 -10 -18 29 30 3.8 4.5 45 Pin Configuration +3.3 Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (CW, 50ohm matched) +25 dBm Thermal Resistance 210 C/W Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/8 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASW101 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: < 200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/8 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 5 150 300 450 Magnitude S21 (dB) 25.0 24.5 23.5 21.5 Magnitude S11 (dB) -15 -15 -14 -12 Magnitude S22 (dB) -12 -15 -14 -12 Output P1dB (dBm) 17 17 17 17 Output IP3 (dBm) 28 29 30 30 Noise Figure (dB) 3.6 3.8 4.0 3.8 Device Voltage (V) +3.3 Current (mA) 40 1) 5 ~ 450 MHz +3.3 V 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 F C3=100 pF L1=1 R1=2.4 k C1=1 F RF IN C2=1 F RF OUT ASW101 S-parameters & K-factor 30 0 25 -5 S11 (dB) Gain (dB) 20 15 -10 10 -15 5 0 0 100 200 300 400 500 -20 0 100 200 Frequency (MHz) 300 400 500 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 100 200 300 400 500 0 0 500 Frequency (MHz) 3/8 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier R Bias 3.9 k 3.6 k Frequency (MHz) 60~110 60~110 Magnitude S21 (dB) 20.0 20.5 Gain Flatness (dB) 0.4 0.4 Magnitude S11 (dB) -9.5 -10 Low Current Magnitude S22 (dB) -9 -11 60 ~ 110 MHz Output P1dB (dBm) 4.5 4.5 Output IP31) (dBm) 12 12 Noise Figure (dB) 2.4 2.4 Device Voltage (V) +3 +3 Current (mA) 8 10 APPLICATION CIRCUIT IF +3 V 1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vcc=3 V D1=5.6V Zener Diode C4=1 F C3=1000 pF R Bias= 3.9 k or 3.6 k L1=390 nH RF IN RF OUT ASW101 C2=1000 pF C1=1000 pF R1=620 25 5 20 0 15 -5 S11 (dB) Gain (dB) S-parameters (R Bias=3.9 kohm) & K-factor 10 5 0 -10 -15 0 50 100 150 200 250 300 -20 0 50 100 Frequency (MHz) 5 0 4 Stability Factor 5 S22 (dB) -5 -10 -15 -20 200 250 300 3 2 1 0 50 100 150 200 250 300 0 0 500 Frequency (MHz) 4/8 150 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 100 200 350 Magnitude S21 (dB) 25.0 24.5 23.0 Magnitude S11 (dB) -12 -13 -13 Magnitude S22 (dB) -11 -16 -18 Output P1dB (dBm) 17.0 18.0 18.5 Output IP3 (dBm) 30 31 33 Noise Figure (dB) 3.7 3.7 3.8 Device Voltage (V) +4.45 Current (mA) 50 1) 100 ~ 350 MHz +5 V 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vs=5 V R1=11 C4=1 F C3=100pF L1=220 nH C1=1 nF RF IN C2=1 nF ASW101 S-parameters & K-factor 0 30 -5 20 -10 S11 (dB) Gain (dB) 25 15 -15 10 -20 5 0 0 50 100 150 200 250 300 350 400 -25 0 50 100 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 250 300 350 400 3 2 0 50 100 150 200 250 300 350 400 0 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 5/8 200 1 -20 -25 150 Frequency (MHz) Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Wide Band Frequency (MHz) 500 900 1750 2000 2400 Magnitude S21 (dB) 21.0 18.0 12.5 11.0 9.5 Magnitude S11 (dB) -10 -10 -11 -10 -9 Magnitude S22 (dB) -22 -18 -18 -18 -15 Output P1dB (dBm) 17 17 18 18 18 500 ~ 2500 MHz Output IP31) (dBm) 30 30 31 31 31 +3.3 V Noise Figure (dB) 4.2 3.8 3.9 4.0 4.5 Device Voltage (V) +3.3 Current (mA) 40 1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 F C3=100 pF L1=56 nH R1=2.4 k C1=100 pF RF IN C2=100 pF RF OUT ASW101 S-parameters & K-factor 30 5 25 0 o -40 c o 25 c o 85 c -5 S11 (dB) Gain (dB) 20 o -40 c o 25 c o 85 c 15 -10 10 -15 5 0 0 500 1000 1500 2000 2500 3000 3500 -20 0 500 1000 Frequency (MHz) -5 3000 3500 4 Stability Factor S22 (dB) 2500 o -40 c o 25 c o 85 c -10 -15 -20 3 2 1 -25 0 500 1000 1500 2000 2500 3000 3500 0 0 500 Frequency (MHz) 6/8 2000 5 0 -30 1500 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier Gain vs. Temperature 60 22 50 20 40 18 Gain (dB) Current (mA) Current vs. Temperature 30 16 Frequency = 900 MHz 14 20 10 -60 -40 -20 0 20 40 60 80 12 -60 100 -40 -20 20 32 Output IP3 (dBm) P1dB (dBm) 34 18 16 o -40 c o 25 c o 85 c 14 500 1000 1500 2000 28 2500 24 3000 o 0 500 1000 5 30 4 NF (dB) Output IP3 (dBm) 35 25 20 15 6 8 2500 3000 10 12 3 Frequency = 850 MHz 1 14 0 -60 -40 Pout per Tone (dBm) 7/8 2000 2 o -40 c o 25 c o 85 c 4 1500 NF vs. Temperature (Frequency = 850 MHz) 6 2 100 Frequency (MHz) 40 0 80 -40 c o 25 c o 85 c 26 Output IP3 vs. Tone Power (Frequency = 2000 MHz) -2 60 30 Frequency (MHz) 10 40 Output IP3 vs. Frequency 22 0 20 o P1dB vs. Frequency 12 0 Temperature ( C) o Temperature ( C) -20 0 20 40 60 80 100 o Temperature ( C) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASW101 5 ~ 3000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 8/8 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017