MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Description G This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from process 92. Source & Drain are interchangeable. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Parameter Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 www.fairchildsemi.com MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier January 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cut-Off Voltage -25 V VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA -1.0 nA -1.0 μA MMBFJ309 -1.0 -4.0 MMBFJ310 -2.0 -6.5 MMBFJ309 12 30 MMBFJ310 24 60 V On Characteristics IDSS VGS(f) Zero-Gate Voltage Drain Current(4) VDS = 10 V, VGS = 0 Gate-Source Forward Voltage VDS = 0, IG = 1.0 mA 1.0 mA V Small Signal Characteristics Re(yis) Common-Source Input Conductance VDS = 10 V, ID = 10 mA, MMBFJ309 f = 100 MHz MMBFJ310 0.7 Re(yos) Common-Source Output Conductance VDS = 10 V, ID = 10 mA, f = 100 MHz 0.25 mmhos Gpg Common-Gate Power Gain VDS = 10 V, ID = 10 mA, f = 100 MHz 16 dB Re(yfs) Common-Source Forward Transconductance VDS = 10 V, ID = 10 mA, f = 100 MHz 12 mmhos Re(yig) Common-Gate Input Conductance VDS = 10 V, ID = 10 mA, f = 100 MHz 12 mmhos Common-Source Forward Transconductance VDS = 10 V, ID = 10 mA, MMBFJ309 10000 f = 1.0 kHz MMBFJ310 8000 goss Common-Source Output Conductance VDS = 10 V, ID = 10 mA, f = 1.0 kHz gfg Common-Gate Forward Conductance VDS = 10 V, ID = 10 mA, MMBFJ309 f = 1.0 kHz MMBFJ310 gog Common-Gate Output Conductance VDS = 10 V, ID = 10 mA, MMBFJ309 f = 1.0 kHz MMBFJ310 150 Cdg Drain-Gate Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 2.0 2.5 pF Csg Source-Gate Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 4.1 5.0 pF NF Noise Figure VDS = 10 V, ID = 10 mA, f = 450 MHz 3.0 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 10 V, ID = 10 mA, f = 100 Hz 6.0 nV/ Hz gfs mmhos 0.5 20000 18000 150 13000 μmhos μmhos μmhos 12000 100 μmhos Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 www.fairchildsemi.com 2 MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Electrical Characteristics Figure 1. Transfer Characteristics Figure 2. Transfer Characteristics Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Input Admittance Figure 6. Forward Transadmittance © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 www.fairchildsemi.com 3 MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics Figure 7. Common Drain-Source Figure 8. Output Conductance vs. Drain Current Figure 9. Output Admittance Figure 10. Capacitance vs. Voltage Figure 11. Noise Voltage vs. Frequency Figure 12. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 www.fairchildsemi.com 4 MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics (Continued) Figure 14. Transconductance vs. Drain Current Figure 13. Parameter Interactions P D - POWER DISSIPATION (mW) 700 600 500 SOT-23 400 300 200 100 Figure 15. Leakage Current vs. Voltage © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 16. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 5 MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics (Continued) MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MMBFJ309 / MMBFJ310 Rev. 1.5 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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