MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes • • • • • • hFE = 70 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033 High Current Gain − Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO−220AB Compact Package Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model C Human Body Model 3B Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MARKING DIAGRAM 4 TO−220 CASE 221A STYLE 1 MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO 250 Vdc Collector−Base Voltage VCB 250 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 16 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.40 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W MJE15032G Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W MJE15033 Collector Current − Continuous − Peak Operating and Storage Junction Temperature Range 1 2 A YW MJE1503xG AKA 3 MJE1503x = Specific Device Code x = 2 or 3 A = Assembly Location Y = Year W = Work Week G = Pb−Package ORDERING INFORMATION Device Package Shipping † TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MJE15032 MJE15033G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 3 1 Publication Order Number: MJE15032/D MJE15032 (NPN), MJE15033 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 250 − Vdc Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc 70 50 10 − − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc fT 30 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15032 (NPN), MJE15033 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMPS) 100 100 ms 10 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50ms 250ms 10ms 0.1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1000 Figure 2. MJE15032 & MJE15033 Safe Operating Area PD, POWER DISSIPATION (WATTS) 0.01 1.0 TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 120 140 160 MJE15032 (NPN), MJE15033 (PNP) NPN − MJE15032 PNP − MJE15033 1000 150°C h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN 1000 25°C 100 −55°C 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 150°C 100 −55°C 10 1.0 10 25°C 0.1 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 10 −55°C 1.0 25°C 150°C 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 25°C 150°C 0.1 10 −55°C 1.0 0.1 10 10 100 150°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 7. PNP − MJE15033 VCE = 5 V VBE(on) Curve Figure 6. NPN − MJE15032 VCE = 5 V VBE(on) Curve 25°C 1.0 −55°C 0.1 10 25°C 1.0 −55°C 150°C 0.1 0.01 10 Figure 5. PNP − MJE15033 VCE = 5 V DC Current Gain Figure 4. NPN − MJE15032 VCE = 5 V DC Current Gain 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. PNP − MJE15033 VCE(sat) IC/IB = 10 Figure 8. NPN − MJE15032 VCE(sat) IC/IB = 10 http://onsemi.com 4 10 MJE15032 (NPN), MJE15033 (PNP) NPN − MJE15032 PNP − MJE15033 100 150°C 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100 25°C 1.0 −55°C 0.1 0.01 25°C 10 −55°C 1.0 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.01 10 0.1 Figure 10. NPN − MJE15032 VCE(sat) IC/IB = 20 V BE , BASE EMITTER VOLTAGE (VOLTS) V BE , BASE EMITTER VOLTAGE (VOLTS) 10 10 −55°C 25°C 150°C 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. PNP − MJE15033 VCE(sat) IC/IB = 20 10 1.0 150°C 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 25°C 150°C 0.1 10 −55°C 0.1 Figure 12. NPN − MJE15032 VBE(sat) IC/IB = 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 13. PNP − MJE15033 VBE(sat) IC/IB = 10 http://onsemi.com 5 10 MJE15032 (NPN), MJE15033 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA SEATING PLANE −T− B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE15032/D