Single N-channel Trench MOSFET 30V, 11.9A, 18.8mΩ General Description Features The MDS1528 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1528 is suitable for DC/DC converter and general purpose applications. VDS = 30V ID = 11.9A @VGS = 10V RDS(ON) < 18.8mΩ @VGS = 10V < 27.8mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D 6(D) 7(D) 8(D) 5(D) G 2(S) 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC 11.9 TC=70oC Continuous Drain Current (1) 9.5 ID o TA=25 C 8.7 TA=70oC 6.9(3) Pulsed Drain Current IDM 40 o TC=25 C 3.0 PD o TA=25 C W 2.5(3) TA=70oC Single Pulse Avalanche Energy A 4.7 TC=70oC Power Dissipation A (3) 1.6(3) (2) Junction and Storage Temperature Range EAS 20 TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 26.4 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case July. 2012. Version1.3 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1528 – Single N-Channel Trench MOSFET 30V MDS1528 Part Number Temp. Range Package Packing Quantity Rohs Status MDS1528URH -55~150oC SOIC-8 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7 - - 1 - - 5 - - ±0.1 - 16.3 18.8 - 23.6 27.3 VGS = 4.5V, ID = 5A - 23.2 27.8 VDS = 5V, ID = 6A - 20 - 5.1 7.3 9.5 2.5 3.6 4.6 - 1.6 - - 1.3 - 317 453 589 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 6A Drain-Source ON Resistance Forward Transconductance TJ=125oC RDS(ON) gfs V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 6A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss 30 43 56 Output Capacitance Coss 62 88 115 Turn-On Delay Time td(on) - 5.5 - - 3.1 - - 14.0 - - 2.8 - 1.0 3.0 4.0 Ω - 0.84 1.1 V - 15.9 23.8 ns - 8.7 13.1 nC Rise Time Turn-Off Delay Time tr td(off) VGS = 10V, VDS = 15.0V, ID = 6A, RG = 3.0Ω Fall Time tf Gate Resistance Rg f=1 MHz VSD IS = 6A, VGS = 0V pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 6A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 10.8A, VDD = 27V, VGS = 10V 3. T < 10sec July. 2012. Version1.3 2 MagnaChip Semiconductor Ltd. MDS1528 – Single N-Channel Trench MOSFET 30V Ordering Information 30 15 4.5V 5.0V 8.0V Drain-Source On-Resistance [mΩ] ID, Drain Current [A] 4.0V 3.5V VGS = 10V 10 5 3.0V 0 0.0 25 VGS = 4.5V 20 VGS = 10V 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 40 1.8 ※ Notes : VGS=10V ID=6A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 ID = 6A 30 20 TA = 25℃ 10 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 ※ Notes : ※ Notes : 1 10 IDR, Reverse Drain Current [A] ID, Drain Current [A] VDS = 5V 12 TA=25℃ 8 4 VGS = 0V TA=25℃ 0 10 -1 10 0 0 1 2 3 4 5 0.3 VGS, Gate-Source Voltage [V] 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics July. 2012. Version1.3 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1528 – Single N-Channel Trench MOSFET 30V 20 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 6A 500 Ciss Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 400 300 200 ※ Notes ; Coss 100 2 1. VGS = 0 V 2. f = 1 MHz Crss 0 0 0 0 2 4 6 5 10 8 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 15 Operation in This Area is Limited by R DS(on) 2 12 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 10 ms 1 100 ms 1s 10s 10 DC 0 9 6 3 10 Single Pulse TJ=Max rated TC=25℃ -1 10 0 25 -1 10 0 10 1 10 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 2 D=0.5 1 10 0.2 0.1 0.05 0 10 0.02 0.01 Zθ JC , Thermal Response 10 single pulse -1 10 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve July. 2012. Version1.3 4 MagnaChip Semiconductor Ltd. MDS1528 – Single N-Channel Trench MOSFET 30V 600 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. July. 2012. Version1.3 5 MagnaChip Semiconductor Ltd. MDS1528 – Single N-Channel Trench MOSFET 30V Physical Dimensions