INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R120C7，IIPP60R120C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the experience of the leading SJ MOSFET supplier with high class innovation ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 92 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.357 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R120C7，IIPP60R120C7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.39mA RDS(on) Drain-Source On-Resistance IGSS MIN TYP MAX 600 UNIT V 4 V VGS=10V; ID=7.8A 0.12 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA VSD Diode forward voltage IF=7.8A; VGS = 0V isc website：www.iscsemi.cn 2 3 0.9 V isc & iscsemi is registered trademark