DMPH6050SFGQ 60V P-CHANNEL +175°C MOSFET PowerDI3333-8 RDS(ON) Max ID Max TC = +25°C 50mΩ @ VGS = -10V -18A 70mΩ @ VGS = -4.5V -15A BVDSS -60V Features and Benefits Description and Applications Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – ensures on state losses are minimized Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Backlighting Power Management Functions DC-DC Converters ® Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D S D D Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMPH6050SFGQ-7 DMPH6050SFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PowerDI3333-8 YYWW ADVANCE INFORMATION ADVANCED INFORMATION Product Summary PH5 PH5= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 1 of 7 www.diodes.com March 2017 © Diodes Incorporated DMPH6050SFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State Continuous Drain Current (Note 8) VGS = -10V Steady State TA = +25°C TA = +100°C TC = +25°C TC = +100°C Value -60 ±20 -6.1 -4.2 ID A -18 -12 -32 -2 -32 -24.8 30.8 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current (Note 9) L = 0.1mH Avalanche Energy (Note 9) L = 0.1mH Unit V V IDM IS ISM IAS EAS A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 6) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1.2 125 85 2.8 54 37 6 -55 to +175 RJA Total Power Dissipation (Note 7) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 41 52 -0.7 -3 50 70 -1.2 V Static Drain-Source On-Resistance -1 — — — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -7A VGS = -4.5V, ID = -7A VGS = 0V, IS = -1A — — — — — — — — — — — — — — 1293 86.3 64.7 12 11.9 24.1 3.6 5.7 4.3 6.3 46.7 25.3 13.6 7.4 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VDS = -30V, VGS = -10V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 2 of 7 www.diodes.com March 2017 © Diodes Incorporated DMPH6050SFGQ 30 VGS = -10V VGS = -4.5V VGS = -4.0V ID, DRAIN CURRENT (A) VDS = -5.0V 25 VGS = -5.0V 20 15 VGS = -3.5V 10 20 15 T A = 175°C TA = 150°C 10 T A = 125°C T A = 85°C 5 5 TA = 25°C VGS = -3.0V VGS = -2.8V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.090 ) ( E C N A T S IS E R N O E C R U O S N I A R D ,N ) 0.080 0.070 0.060 VGS = -4.5V 0.050 VGS = -10V 0.040 O ( S D ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N O ( S D R 0.030 0 O ( S D 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0.1 VGS = -10V 0.09 T A = 175°C TA = 150°C 0.08 TA = 125°C 0.07 T A = 85°C 0.06 0.05 T A = 25°C 0.04 T A = -55°C 0.03 0.02 0.01 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 R 30 3 of 7 www.diodes.com 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 0.18 I D = -7A 0.16 ID = -5A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 ON-RESISTANCE RDS(ON) , DRAIN-SOURCE RD S(ON ON-RESISTANCE ), DRAIN-SOURCE (NORMALIZED) (Normalized) R TA = -55°C 0 1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION ADVANCED INFORMATION 25 I D, DRAIN CURRENT (A) 30 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 2.2 2 VGS = -10V 1.8 I D = -7A 1.6 V GS = -4.5V 1.4 I D = -7A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature March 2017 © Diodes Incorporated 2.6 0.04 )V ( E G A T L O V D L O H S E R H T E T A G , )H 0.03 V VGS(TH), GATE THRESHOLD VOLTAGE (V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 0.11 0.1 VGS = -10V 0.09 ID = -7A 0.08 0.07 VGS = -4.5V 0.06 I D = -7A 0.05 T (S G 0.02 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 30 2.4 I D = -1mA 2.2 2 1.8 I D = -250µA 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Junction Temperature 100000 T A = 175°C VGS = 0V 10000 IS, SOURCE CURRENT (A) T A= 150°C 20 TA = 125°C 15 10 TA= 85°C I 5 S D TA = 125°C TA = 85°C T A = 25°C 1 TA = 25°C 0 0 0.1 0 T A= -55°C 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current VGS GATE THRESHOLD VOLTAGE (V) f = 1MHz Ciss 1000 Coss 100 C rss 10 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 10 10000 ) F p ( E C N A T I C A P A C N O IT C N U J , T C T A = 150°C ) A n ( T N 1000 E R R U C 100 E G A K A 10 E L ,S T A= 175°C IDSS, LEAKAGE CURRENT (nA) 25 )A ( T N E R R U C E C R U O S s, I CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION ADVANCED INFORMATION DMPH6050SFGQ I D = -5A 6 4 2 0 20 25 30 35 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance 5 DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 40 4 of 7 www.diodes.com VDS = -30V 8 0 4 8 12 16 20 24 Qg , TOTAL GATE CHARGE (nC) Figure 12 Gate Charge 28 March 2017 © Diodes Incorporated DMPH6050SFGQ 100 ID, DRAIN CURRENT (A) )A ( T N E R R U C N IA R D ,d I PW = 100µs 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(max) = 175°C TA = 25°C PW = 10ms VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION R DS(on) Limited PW = 1ms 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 125°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 5 of 7 www.diodes.com March 2017 © Diodes Incorporated DMPH6050SFGQ Package Outline Dimensions ADVANCE INFORMATION ADVANCED INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Y4 X1 Y1 Y3 Y X DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 1 C 6 of 7 www.diodes.com March 2017 © Diodes Incorporated DMPH6050SFGQ ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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