ON MMJT350T1 Bipolar power transistors pnp silicon Datasheet

MMJT350T1
Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line−operated
applications such as low power, line−operated series pass and
switching regulators requiring PNP capability.
Features
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 2.75 WATTS
• High Collector−Emitter Sustaining Voltage −
•
•
•
•
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VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
Excellent DC Current Gain −
hFE = 30−240 @ IC
= 50 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb−Free Package is Available
C 2,4
B1
E3
Schematic
4
1
SOT−223
CASE 318E
STYLE 1
2
3
MARKING DIAGRAM
AYW
T350 G
G
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
T350
= Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
MMJT350T1
SOT−223
1000 / Tape & Reel
MMJT350T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MMJT350T1/D
MMJT350T1
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
300
Vdc
Collector−Base Voltage
VCB
300
Vdc
Emitter−Base Voltage
VEB
3.0
Vdc
IC
0.5
0.75
Adc
PD
2.75
22
1.40
0.65
W
mW/°C
W
W
TJ, Tstg
– 55 to + 150
°C
Symbol
Max
Unit
RqJC
RqJA
RqJA
45
85
190
°C/W
TL
260
°C
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, − Junction−to−Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
VCEO(SUS)
300
−
Vdc
Collector−Base Current
(VCB = Rated VCBO, VEB = 0)
ICBO
−
100
mAdc
Emitter Cut−off Current
(VBE = 5.0 Vdc)
IEBO
−
100
mAdc
30
20
240
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0 Adc)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
hFE
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2
−
MMJT350T1
hFE , DC CURRENT GAIN
100
1.0
TJ = 150°C
TJ = 25°C
0.8
25°C
V, VOLTAGE (VOLTS)
200
70
50
−55 °C
30
20
VCE = 2.0 V
VCC = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
30
20
10
20
0.4
IC/IB = 10
VCE(sat)
50
70
100
200
300
0
500
Figure 1. DC Current Gain
Figure 2. “On” Voltages
100ms
dc
1.0ms
500ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
30
50
70
100
200
300 400
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0 7.0
IC/IB = 5.0
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200
100
70
50
VBE @ VCE = 10 V
IC, COLLECTOR CURRENT (mA)
1000
700
500
300
0.6
0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)
10
5.0 7.0 10
VBE(sat) @ IC/IB = 10
10
200 300
500
+1.2
*APPLIES FOR IC/IB < hFE/4
+0.8
+0.4
0
*qVC for VCE(sat)
−0.4
+100 °C to +150°C
+25 °C to +100°C
−55 °C to +25°C
−0.8
+25 °C to +150°C
−1.2
−1.6
qVB for VBE
−2.0
−55 °C to +25°C
−2.4
−2.8
5.0 7.0
Figure 3. Active−Region Safe Operating Area
10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200 300
500
Figure 4. Temperature Coefficients
4.0
PD , POWER DISSIPATION (WATTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
3.0
TC
2.0
1.0
TA
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 5. Power Derating
http://onsemi.com
3
125
150
MMJT350T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
4
HE
1
2
3
E
b
e1
e
0.08 (0003)
C
q
A
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
q
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMJT350T1/D
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