MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.75 WATTS • High Collector−Emitter Sustaining Voltage − • • • • http://onsemi.com VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain − hFE = 30−240 @ IC = 50 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available C 2,4 B1 E3 Schematic 4 1 SOT−223 CASE 318E STYLE 1 2 3 MARKING DIAGRAM AYW T350 G G A = Assembly Location Y = Year W = Work Week G = Pb−Free Package T350 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † MMJT350T1 SOT−223 1000 / Tape & Reel MMJT350T1G SOT−223 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MMJT350T1/D MMJT350T1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VCEO 300 Vdc Collector−Base Voltage VCB 300 Vdc Emitter−Base Voltage VEB 3.0 Vdc IC 0.5 0.75 Adc PD 2.75 22 1.40 0.65 W mW/°C W W TJ, Tstg – 55 to + 150 °C Symbol Max Unit RqJC RqJA RqJA 45 85 190 °C/W TL 260 °C Collector−Emitter Voltage Collector Current − Continuous − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, − Junction−to−Case − Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material − Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Max Unit VCEO(SUS) 300 − Vdc Collector−Base Current (VCB = Rated VCBO, VEB = 0) ICBO − 100 mAdc Emitter Cut−off Current (VBE = 5.0 Vdc) IEBO − 100 mAdc 30 20 240 − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0 Adc) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE http://onsemi.com 2 − MMJT350T1 hFE , DC CURRENT GAIN 100 1.0 TJ = 150°C TJ = 25°C 0.8 25°C V, VOLTAGE (VOLTS) 200 70 50 −55 °C 30 20 VCE = 2.0 V VCC = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 30 20 10 20 0.4 IC/IB = 10 VCE(sat) 50 70 100 200 300 0 500 Figure 1. DC Current Gain Figure 2. “On” Voltages 100ms dc 1.0ms 500ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 5.0 7.0 IC/IB = 5.0 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 100 70 50 VBE @ VCE = 10 V IC, COLLECTOR CURRENT (mA) 1000 700 500 300 0.6 0.2 θV, TEMPERATURE COEFFICIENTS (mV/°C) 10 5.0 7.0 10 VBE(sat) @ IC/IB = 10 10 200 300 500 +1.2 *APPLIES FOR IC/IB < hFE/4 +0.8 +0.4 0 *qVC for VCE(sat) −0.4 +100 °C to +150°C +25 °C to +100°C −55 °C to +25°C −0.8 +25 °C to +150°C −1.2 −1.6 qVB for VBE −2.0 −55 °C to +25°C −2.4 −2.8 5.0 7.0 Figure 3. Active−Region Safe Operating Area 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. Temperature Coefficients 4.0 PD , POWER DISSIPATION (WATTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3.0 TC 2.0 1.0 TA 0 25 50 75 100 T, TEMPERATURE (°C) Figure 5. Power Derating http://onsemi.com 3 125 150 MMJT350T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE 1 2 3 E b e1 e 0.08 (0003) C q A A1 DIM A A1 b b1 c D E e e1 L1 HE q STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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