Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.25 MHz: –55 dBc @ 1 MHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1990 MHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF19060R3 CASE 465A–06, STYLE 1 NI–780S MRF19060SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC ≥ = 25°C Derate above 25°C PD 180 1.03 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.97 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF19060 MRF19060R3 MRF19060SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc gfs — 4.7 — S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 — 4 V Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 V Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — V Crss — 2.7 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) η 33 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD — –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL — –12 — dB P1dB — 60 — W Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19060 MRF19060R3 MRF19060SR3 2 MOTOROLA RF DEVICE DATA B2 – B3 C1 C2, C7 C3, C8 C4 C5 C6 C9 C10, C11 C12 R1 R2 R3 R4 Z1 Z2 Z3 Ferrite Beads, Fair Rite, 2743019447 10 µF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 0.10 µF Chip Capacitors, B Case, Kemet #CDR33BX104AKWS 5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X 6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X 22 µF, 35 V Tantalum Capacitor, SMT, Sprague 0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 15 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.580″ x 0.074″ Microstrip 0.100″ x 0.074″ Microstrip 0.384″ x 0.074″ Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.152″ x 0.140″ Microstrip 0.090″ x 0.102″ Microstrip 0.245″ x 0.217″ Microstrip 0.090″ x 0.737″ Microstrip 0.530″ x 0.941″ Microstrip 1.010″ x 0.050″ Microstrip 1.060″ x 0.050″ Microstrip 0.446″ x 1.137″ Microstrip 0.152″ x 0.567″ Microstrip 0.183″ x 0.220″ Microstrip 0.100″ x 0.338″ Microstrip 0.480″ x 0.142″ Microstrip 0.140″ x 0.080″ Microstrip 0.173″ x 0.080″ Microstrip 0.420″ x 0.080″ Microstrip 0.030″ Glass Teflon Arlon GX–0300–55–22, 2 oz Cu Figure 1. MRF19060 Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF19060 MRF19060R3 MRF19060SR3 3 MRF19060 Figure 2. MRF19060 Test Circuit Component Layout MRF19060 MRF19060R3 MRF19060SR3 4 MOTOROLA RF DEVICE DATA 5 5 * 5 6 (7 /01 6 ' "$ , 6 8 9/5/:; -;<&0=;8;:1 >. /:; %<7?:3 5 5 5 %& - 5 + ,! "-.$ 5 5 --*"(7$ --*"(7$ 5 (7 + 6 -. 9/5/:; -;<&0=;8;:1 >. /:; %<7?:3 8 5 5 5 8 5 8 5 5 4 4 /01 ' "'$ 5 %& ' "($ %& ' "($ 8 8 6 (7 + 6 -. 9/5/:; -;<&0=;8;:1 >. /:; %<7?:3 /01 ' "'$ Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 5 %& - @<::;A& /=9<=( ?A/1B <3?:3B =<++?7B5 C:7B 5 5 /01 ' "' 234$ - 6 (7 , 6 8 + 6 -. 9/5/:; -;<&0=;8;:1 >. /:; %<7?:3 =( =(;= 1@ =(;= 5 1@ =(;= 5 5 4 4 5 4 -. 5 8 4 5 η >. 4 /01 ' "'$ Figure 6. Intermodulation Products versus Output Power 4 5 5 Figure 5. Intermodulation Distortion versus Output Power 5 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 5 6 5 4 -. Figure 3. Class AB Broadband Circuit Performance 5 (7 , 6 8 + 6 -. @<::;A %<7?:3 "@<::;A <:(9?(1@$B >. " >.$ 4 -. " 4 >.$ 4 -. " -.$ 5 6 5 /01 6 ' "$ , 6 8 + 6 -. 9/5/:; -;<&0=;8;:1 >. /:; %<7?:3 5 5 5 %& 4 5 5 - 5 5 4 5 * " *$ Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19060 MRF19060R3 MRF19060SR3 5 --*"(7$ η )*'"($ η!"#$ %& ' "($ **"($ --*"(7$ η!"#$ %& ' "($ TYPICAL CHARACTERISTICS + 6 -. /6 Ω ?: -. + 6 -. *D -. 6 , 6 8 /01 6 ' f MHz ZOL* Ω Zin Ω 1930 1.65 + j0.67 1.85 – j0.50 1960 1.64 + j0.45 1.89 – j0.74 1990 1.60 + j0.20 1.96 – j0.94 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. /1;B *D 9<& 7@/&;: E<&;( /: 1=<(;/++& E;19;;: 3<?: /01%01 %/9;= (=<?: ;++?7?;:7C <:( ?:1;=8/(0A<1?/: (?&1/=1?/:4 :%01 -<17@?:3 ;19/=> 01%01 -<17@?:3 ;19/=> ;2?7; :(;= ;&1 Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF19060 MRF19060R3 MRF19060SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 2X 1 Q EEE - - B 4 - * ! 4-5 4 4 ** -B 4 4 * 4 - - 4 "4 $ '! - F !4 - 3 B K 2 (FLANGE) D EEE - - - M EEE N R (INSULATOR) - - - 777 - - S (LID) 777 - - - <<< - - (LID) - (INSULATOR) - H C F E T A A SEATING PLANE CASE 465–06 ISSUE F NI–780 MRF19060 (FLANGE) 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D EEE - - - N (LID) 777 M R - - - 777 - - - - <<< - - S (INSULATOR) EEE - (LID) - (INSULATOR) - MILLIMETERS MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 !* B 4 4 4 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 555 4 555 4 4 4 4 MILLIMETERS MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 555 4 555 4 4 4 4 !* B 4 4 4 H C 3 INCHES MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 B 4 - * ! 4-5 4 4 ** -B 4 4 * 4 - - 4 "4 $ '! - F !4 4X Z (LID) B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF19060SR3 MRF19060 MRF19060R3 MRF19060SR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19060 MRF19060R3 MRF19060SR3 ◊ 8 MOTOROLA RF DEVICE MRF19060/D DATA